IP Library Granted Patent US 11,897,761
Granted Patent B2
US 11,897,761 · App. 17/832,904 · Granted Feb 13, 2024

Semiconductor device and method of manufacturing semiconductor device

Inventors: Ki Yeul Yang (Incheon, KR); Kyung Han Ryu (Incheon, KR); Seok Hun Yun (Incheon, KR); Bora Baloglu (Oporto, PT); Hyun Cho (Incheon, KR); Ramakanth Alapati (Dublin, CA)
Assignee: Amkor Technology Singapore Holding Pte. Ltd.
B81C1/00182B81B7/007B81C1/00158B81C1/00301H01L23/481B81B2201/02
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Quick Facts
Patent No.
US 11,897,761
App. No.
17/832,904
Granted
Feb 13, 2024
Kind
B2
Abstract

In one example, an electronic device includes a semiconductor sensor device having a cavity extending partially inward from one surface to provide a diaphragm adjacent an opposite surface. A barrier is disposed adjacent to the one surface and extends across the cavity, the barrier has membrane with a barrier body and first barrier strands bounded by the barrier body to define first through-holes. The electronic device further comprises one or more of a protrusion pattern disposed adjacent to the barrier structure, which can include a plurality of protrusion portions separated by a plurality of recess portions; one or more conformal membrane layers disposed over the first barrier strands; or second barrier strands disposed on and at least partially overlapping the first barrier strands. The second barrier strands define second through-holes laterally offset from the first through-holes. Other examples and related methods are also disclosed herein.

Claims (35)

1. A method of forming electronic devices, comprising: providing a semiconductor substrate having a plurality of sensor devices in a side-by-side configuration, each sensor device comprising:

a sensor top side; a sensor bottom side opposite to the sensor top side; and a cavity extending partially inward from the sensor bottom side; providing a barrier structure having a plurality of barriers each attached to respective sensor bottom side of each of the plurality of sensor devices so that each of the plurality of barriers extends over a respective cavity of each of the plurality of sensor devices, wherein each of the plurality of barriers comprises first barrier strand structures defining first barrier through-holes; and singulating the semiconductor substrate to separate the plurality of sensor devices into individual sensor devices having a singulated barrier; wherein the method, further comprising: providing a base substrate including a dielectric structure, a conductive structure, and a passageway extending through a portion of the base substrate, and attaching one of the individual sensor devices having a singulated barrier to the base substrate so that the singulated barrier is over the passageway and interposed between the base substrate and the one of the individual sensor devices.

2. The method of claim 1 , further comprising:

attaching the semiconductor substrate to a carrier before singulating.

3. The method of claim 2 , wherein:

attaching comprises placing each sensor top side adjacent to the carrier so that the semiconductor substrate is interposed between the carrier and the barrier structure.

4. The method of claim 1 , wherein:

providing the semiconductor substrate comprises providing a plurality of Micro-Electro-Mechanical-System (MEMS) sensor devices.

5. The method of claim 1 , wherein:

providing the barrier structure comprises providing the barrier structure comprising a dielectric film.

6. The method of claim 1 , wherein:

providing the barrier structure comprises:

laminating a dielectric film onto the respective sensor bottom side of each of the plurality of sensor devices; and

after the laminating, providing the first barrier strand structures defining the first barrier through-holes.

7. The method of claim 1 , wherein: attaching the one of the individual sensor devices comprises attaching without a stiffener.

8. The method of claim 1 , wherein: attaching the one of the individual sensor devices comprises attaching with an adhesive.

9. The method of claim 1 , wherein:

providing the barrier structure comprises:

attaching a dielectric film to the semiconductor substrate adjacent to each sensor bottom side; and

after attaching the dielectric film, forming the first barrier strand structures defining the first barrier through-holes in the dielectric film.

10. A method of forming electronic devices, comprising: providing a substrate having a substrate top side, a substrate bottom side opposite to the substrate top side, and electronic devices formed as part of the substrate, wherein each electronic device comprises: an electronic device top side at the substrate top side; an electronic device bottom side opposite to the electronic device top side and at the substrate bottom side; and a cavity extending partially inward from the electronic device bottom side towards the electronic device top side; attaching a barrier structure having a plurality of barriers adjacent to the substrate bottom side, wherein: each of the plurality of barriers extends across a respective cavity; and each of the plurality of barriers comprises first barrier through-holes overlying the respective cavity; attaching the substrate to a carrier; and singulating the substrate to separate the electronic devices into individual electronic devices, wherein: attaching the barrier structure comprises: attaching a dielectric film to the substrate bottom side; and after attaching the dielectric film, forming the first barrier through-holes in the dielectric film.

11. The method of claim 10 , wherein:

attaching the barrier structure comprises:

attaching the barrier structure where each of the plurality of barriers comprises a first barrier body and first barrier strand structures defining the first barrier through-holes; and

singulating comprises singulating through the first barrier body of each of the plurality of barriers.

12. The method of claim 10 , wherein:

attaching the barrier structure comprises:

attaching the barrier structure comprises attaching a barrier structure comprising an organic dielectric film.

13. The method of claim 10 , wherein:

attaching the barrier structure comprises laminating a dielectric film over the substrate bottom side.

14. The method of claim 10 , further comprising:

providing a base substrate including a dielectric structure, a conductive structure, and a passageway extending through a portion of the base substrate, and

attaching one of the individual electronic devices to the base substrate adjacent to the passageway.

15. The method of claim 14 , wherein:

attaching the one of the individual electronic devices comprises attaching without a stiffener.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 6, 2022
From: YANG, KI YEUL; RYU, KYUNG HAN; YUN, SEOK HUN; CHO, HYUN
To: AMKOR TECHNOLOGY KOREA, INC.
Reel/Frame 060107/0909 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 6, 2022
From: BALOGLU, BORA; ALAPATI, RAMAKANTH
To: AMKOR TECHNOLOGY, INC.
Reel/Frame 060108/0131 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 6, 2022
From: AMKOR TECHNOLOGY, INC.
To: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.
Reel/Frame 060108/0273 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 6, 2022
From: AMKOR TECHNOLOGY KOREA, INC.
To: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.
Reel/Frame 060284/0021 →
Continuity (2)
Division 16448901 · Jun 21, 2019
Related Publication 20220298008A1 · Sep 22, 2022