BLANK MASK AND PHOTOMASK USING THE SAME
A blank mask including: a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one of oxygen and nitrogen, and wherein the light shielding film has an SA1 value of 60 to 90 mN/m according to Equation 1-1: SA 1 =γ SL ×tan θ [Equation 1 - 1] where, in the Equation 1-1, the γ SL is an interfacial energy between the light shielding film and a pure water and θ is a contact angle of the light shielding film measured with the pure water, is disclosed.
1 . A blank mask comprising:
a transparent substrate and a light shielding film disposed on the transparent substrate,
wherein the light shielding film comprises a transition metal and at least one of oxygen and nitrogen, and
wherein the light shielding film has an SA1 value of 60 to 90 mN/m according to Equation 1-1:
SA1=γ SL ×tan θ [Equation 1-1]
where, in the Equation 1-1, the γ SL is an interfacial energy between the light shielding film and a pure water and θ is a contact angle of the light shielding film measured with the pure water.
2 . The blank mask of claim 1 ,
wherein the θ is 70° or more.
3 . The blank mask of claim 1 ,
wherein the γ SL is 22 mN/m or more.
4 . The blank mask of claim 1 ,
wherein the light shielding film has a surface energy of 42 to 47 mN/m.
5 . The blank mask of claim 4 ,
wherein the light shielding film has a ratio of 0.135 to 0.16 for polar component of the surface energy compared to the surface energy of the light shielding film.
6 . The blank mask of claim 1 ,
wherein the light shielding film comprises a first light shielding layer and a second light shielding layer disposed on the first light shielding layer.
7 . The blank mask of claim 6 ,
wherein an amount of the transition metal of the second light shielding layer is greater than an amount of the transition metal of the first light shielding layer.
8 . The blank mask of claim 1 ,
wherein the transition metal comprises at least one selected from the group consisting of Cr, Ta, Ti, and Hf.
9 . A blank mask comprising:
a transparent substrate, a phase shift film disposed on the transparent substrate, and a light shielding film disposed on the phase shift film,
wherein the phase shift film comprises a transition metal and silicon,
wherein the light shielding film comprises a transition metal and at least one of oxygen and nitrogen, and
wherein a contact angle of the light shielding film measured with a pure water is 70° or more.
10 . The blank mask of claim 9 ,
wherein the γ SL is 22 mN/m or more.
11 . The blank mask of claim 9 ,
wherein the light shielding film has a surface energy of 42 to 47 mN/m.
12 . The blank mask of claim 11 ,
wherein the light shielding film has a ratio of 0.135 to 0.16 for polar component of the surface energy compared to the surface energy of the light shielding film.
13 . The blank mask of claim 9 ,
wherein the light shielding film comprises a first light shielding layer and a second light shielding layer disposed on the first light shielding layer.
14 . The blank mask of claim 13 ,
wherein an amount of the transition metal of the second light shielding layer is greater than an amount of the transition metal of the first light shielding layer.
15 . The blank mask of claim 9 ,
wherein the transition metal comprises at least one selected from the group consisting of Cr, Ta, Ti, and Hf.
16 . A photomask comprising:
a transparent substrate and a light shielding pattern film disposed on the transparent substrate,
wherein the light shielding pattern film comprises a transition metal and at least one of oxygen and nitrogen, and
wherein the light shielding pattern film has a PSA1 value of 60 to 90 mN/m according to Equation 3 below:
PSA1=γ PSL ×tan θ P [Equation 3]
where, in the Equation 3, γ PSL is an interfacial energy between an upper surface of the light shielding pattern film and a pure water and θ P is a contact angle of the upper surface of the light shielding pattern film measured with the pure water.
17 . The photomask of claim 16 ,
wherein the light shielding pattern film comprises a first light shielding layer and a second light shielding layer disposed on the first light shielding layer.
18 . The photomask of claim 17 ,
wherein an amount of the transition metal of the second light shielding layer is greater than an amount of the transition metal of the first light shielding layer.
19 . The photomask of claim 16 ,
wherein the transition metal comprises at least one selected from the group consisting of Cr, Ta, Ti, and Hf.