Near infrared optical interference filters with improved transmission
An interference filter includes a layers stack comprising a plurality of layers of at least: layers of amorphous hydrogenated silicon with added nitrogen (a-Si:H,N) and layers of one or more dielectric materials, such as SiO 2 , SiO x , SiO x N y , a dielectric material with a higher refractive index in the range 1.9 to 2.7 inclusive, or so forth. The interference filter is designed to have a passband center wavelength in the range 750-1000 nm inclusive. Added nitrogen in the a-Si:H,N layers provides improved transmission in the passband without a large decrease in refractive index observed in a-Si:H with comparable transmission. Layers of a dielectric material with a higher refractive index in the range 1.9 to 2.7 inclusive provide a smaller angle shift compared with a similar interference filter using SiO 2 as the low index layers.
1. A method of manufacturing an interference filter comprising alternating amorphous hydrogenated silicon with added nitrogen (a-Si:H,N) and silicon-based dielectric layers, the method comprising:
sputtering silicon from a silicon target onto a filter substrate; and
during the sputtering, alternating between:
(i) a process gas including hydrogen and nitrogen to deposit a-Si:H,N having a refractive index in the range 3.3 to 3.5 inclusive to form each a-Si:H,N layer; and
(ii) at least one of a process gas including oxygen to deposit silicon suboxide (SiO x ), a process gas including oxygen and nitrogen to deposit silicon oxynitride (SiO x N y ), or a process gas including nitrogen to deposit silicon nitride (Si 3 N 4 ) to form each silicon-based dielectric layer;
wherein the a-Si:H,N layers have an atomic concentration of hydrogen between 4% and 8% and an atomic concentration of nitrogen between 2% and 12%;
wherein the silicon-based dielectric layers have a refractive index lower than a refractive index of the a-Si:H,N, and wherein at least one of the silicon-based dielectric layers has a refractive index in the range 1.9 to 2.7 inclusive.
2. The method of claim 1 , wherein the sputtering comprises:
applying a negative bias to the silicon target; and
including an inert gas component in both (i) the process gas including hydrogen and nitrogen and (ii) the at least one of the process gas including oxygen, the process gas including nitrogen, or the process gas including oxygen and nitrogen.
3. The method of claim 1 , further comprising:
selectively controlling a first valve, second valve, and third valve to alternate between depositing the a-Si:H,N and the silicon-based dielectric layers;
wherein the first valve controls admission of oxygen from an oxygen source;
wherein the second valve controls admission of a hydrogen/nitrogen mixture from a hydrogen source and a first nitrogen source; and
wherein the third valve controls admission of nitrogen from a second nitrogen source.
4. The method of claim 3 , comprising:
depositing the a-Si:H,N layer by closing the first and third valves to turn off the oxygen source and second nitrogen source, and opening the second valve to admit the process gas including hydrogen and nitrogen; and
depositing the silicon-based dielectric layer comprises one of:
depositing a silicon suboxide (SiO x ) layer by opening the first valve to admit process gas including oxygen from the oxygen source, wherein the second and third valves are closed while the first valve is open to turn off the hydrogen source, first nitrogen source, and second nitrogen source;
depositing a silicon nitride (Si 3 N 4 ) layer by opening the third valve to admit process gas including nitrogen from the second nitrogen source, wherein the first and second valves are closed while the third valve is open to turn off the oxygen source, hydrogen source, and first nitrogen source; and/or
depositing a silicon oxynitride (SiO x N y ) layer by opening the first and third valves to admit process gas including oxygen from the oxygen source and nitrogen from the second nitrogen source, wherein the second valve is closed while the first and third valves are open to turn off the hydrogen source and first nitrogen source.
5. The method of claim 3 , comprising:
providing the process gas including hydrogen and nitrogen from the hydrogen source, wherein the hydrogen source comprises at least one of a hydrogen (H 2 ) bottle, ammonia (NH 4 ), or silane (SiH 4 ), and wherein the first nitrogen source comprises at least one of a nitrogen (N 2 ) bottle, ammonia (NH 4 ), or hydrazine (N 2 H 4 ).
6. The method of claim 1 , wherein the sputtering and the alternating manufacture the interference filter having a passband wavelength range of 750-1100 nm inclusive.
7. The method of claim 1 , further comprising:
flipping the filter substrate; and
forming alternating a-Si:H,N and silicon-based dielectric layers on a second side of the filter substrate, wherein the forming comprises:
sputtering silicon from a silicon target onto the second side of the filter substrate; and
during the sputtering, alternating between:
(i) a process gas including hydrogen and nitrogen to deposit a-Si:H,N having a refractive index in the range 3.3 to 3.5 inclusive to form each a-Si:H,N layer; and
(ii) at least one of a process gas including oxygen to deposit silicon suboxide (SiO x ), a process gas including oxygen and nitrogen to deposit silicon oxynitride (SiO x N y ), or a process gas including nitrogen to deposit silicon nitride (Si 3 N 4 ) to form each silicon-based dielectric layer;
wherein the a-Si:H,N layers have an atomic concentration of hydrogen between 4% and 8% and an atomic concentration of nitrogen between 2% and 12%;
wherein the silicon-based dielectric layers have a refractive index lower than a refractive index of the a-Si:H,N, and wherein at least one of the silicon-based dielectric layers has a refractive index in the range 1.9 to 2.7 inclusive.
8. A method of manufacturing an interference filter, the method comprising:
forming a layers stack comprising a plurality of layers of at least:
(i) layers of amorphous hydrogenated silicon with added nitrogen (a-Si:H,N), the a-Si:H,N layers having a refractive index in the range 3.3 to 3.5 inclusive, and
(ii) layers of one or more dielectric materials having a refractive index lower than the refractive index of the a-Si:H,N;
wherein the a-Si:H,N has an atomic concentration of hydrogen between 1% and 8% and an atomic concentration of nitrogen between 2% and 7%;
wherein the layers of one or more dielectric materials include at least one layer of a dielectric material having a refractive index in the range 1.9 to 2.7 inclusive; and
wherein the layers stack includes repeating units of two or more layers.
9. The method of claim 8 , comprising:
forming the layers stack by at least one of sputter deposition, vacuum evaporation, or electron-beam evaporation.
10. The method of claim 8 , wherein the a-Si:H,N has an atomic concentration of hydrogen between 1% and 4% and an atomic concentration of nitrogen between 2% and 6%.
11. The method of claim 8 , wherein the a-Si:H,N has an atomic concentration of hydrogen between 2% and 8% and an atomic concentration of nitrogen between 3% and 7%.
12. The method of claim 8 , wherein the layers of one or more dielectric materials include at least one layer of silicon dioxide (SiO 2 ); and wherein the at least one layer of silicon dioxide (SiO 2 ) is immediately adjacent a layer of a dielectric material having a refractive index in the range 1.9 to 2.7 inclusive with no intervening layer of a-Si:H,N.
13. The method of claim 8 , wherein the one or more dielectric materials includes at least one layer of silicon suboxide (SiO x ) or silicon oxynitride (SiO x N y ).
14. The method of claim 8 , wherein the at least one layer of dielectric material having refractive index in the range 1.9 to 2.7 inclusive includes a layer comprising silicon nitride (Si 3 N 4 ), silicon oxynitride (SiO x N y ) with y large enough to provide a refractive index of 1.9 or higher, tantalum pentoxide (Ta 2 O 5 ), niobium pentoxide (Nb 2 O 5 ), or titanium dioxide (TiO 2 ).
15. The method of claim 8 , wherein the repeating units of two or more layers comprise a layer of a-Si:H,N and at least one layer of the dielectric material having refractive index lower than the refractive index of the a-Si:H,N.
16. The method of claim 8 , further comprising:
providing a transparent substrate; and
forming the layers stack on the transparent substrate such that the transparent substrate supports the layers stack, wherein the forming the layers stack comprises:
forming a first layers stack on a first side of the transparent substrate; and
forming a second layers stack on a second side of the transparent substrate opposite the first side.
17. The method of claim 16 , wherein the forming the first layers stack defines a low pass filter with a low pass cutoff wavelength, wherein the forming the second layers stack defines a high pass filter with a high pass cutoff wavelength, wherein the interference filter has a passband defined between the high pass cutoff wavelength and the low pass cutoff wavelength.
18. The method of claim 8 , wherein the layers stack has a passband wavelength range of 750-1100 nm inclusive.
19. A method of fabricating an interference filter, the method comprising:
forming a layers stack comprising alternating layers of:
(i) amorphous hydrogenated silicon with added nitrogen (a-Si:H,N), the a-Si:H,N layers having a refractive index in the range 3.3 to 3.5 inclusive, and
(ii) silicon-based dielectric layers having a refractive index lower than the refractive index of the a-Si:H,N;
wherein the a-Si:H,N layers have an atomic concentration of hydrogen between 4% and 8% and an atomic concentration of nitrogen between 2% and 12%; and
wherein the interference filter has a passband wavelength range of 750-1100 nm inclusive.
20. The method of claim 19 , wherein the silicon-based dielectric layers comprise at least one of silicon oxide (SiO x ) layers or silicon oxynitride (SiO x N y ) layers.
21. The method of claim 19 , further comprising:
providing a transparent substrate; and
forming the layers stack on the transparent substrate such that the transparent substrate supports the layers stack, wherein the forming the layers stack comprises:
forming a first layers stack on a first side of the transparent substrate; and
forming a second layers stack on a second side of the transparent substrate opposite the first side.
22. The method of claim 21 , wherein the forming the first layers stack defines a low pass filter with a low pass cutoff wavelength, wherein the forming the second layers stack defines a high pass filter with a high pass cutoff wavelength, wherein the interference filter has a passband defined between the high pass cutoff wavelength and the low pass cutoff wavelength.
23. The method of claim 19 , wherein at least one of the silicon-based dielectric layers has a refractive index in the range 1.9 to 2.7 inclusive, and wherein at least one of the silicon-based dielectric layers with refractive index in the range 1.9 to 2.7 inclusive comprises silicon nitride (Si 3 N 4 ) or silicon oxynitride (SiO x N y ) with y large enough to provide a refractive index of 1.9 or higher.