SUSCEPTOR AND MANUFACTURING METHOD THEREOF

1 . A susceptor comprising a substrate comprising a carbon material and having one main surface on which a silicon wafer is to be placed, and another main surface facing the one main surface, wherein

an entire surface of the substrate is covered with a thin film comprising silicon carbide,

the one main surface has an emissivity variation of 3% or less, and

a ratio of an average emissivity between the one main surface and the another main surface facing the one main surface is from 1:1 to 1:0.8.

2 . The susceptor according to claim 1 , wherein the another main surface facing the one main surface has an emissivity variation of 3% or less.

3 . The susceptor according to claim 1 , wherein a ratio of a film thickness of the thin film formed on the another main surface to a film thickness of the thin film formed on the one main surface is 0.7 or more and 1.2 or less, a film thickness difference between a central part and an outer edge part in the one main surface is 40% or less of an average film thickness value of the thin film formed on the one main surface, and a film thickness difference between the maximum film thickness and the minimum film thickness in the outer edge part of the one main surface is 40% or less of the average film thickness value of the thin film formed on the one main surface.

4 . The susceptor according to claim 1 , wherein the film thickness of the thin film comprising silicon carbide formed on the entire surface of the substrate is at least 60 μm.

5 . A method of manufacturing the susceptor according to claim 1 , the method comprising:

supporting the substrate comprising the carbon material in a chamber while moving a support position to the substrate; and

supplying a raw material gas such that a supply direction is parallel to the one main surface of the substrate, thereby forming a thin film comprising silicon carbide on the entire surface of the substrate.