IP Library Granted Patent US 11,611,386
Granted Patent B2
US 11,611,386 · App. 17/841,485 · Granted Mar 21, 2023

Front end module for 6.1 GHz wi-fi acoustic wave resonator RF filter circuit

Inventors: Jeffrey B. Shealy (Davidson, NC); Rohan W. Houlden (Oak Ridge, NC); David M. Aichele (Huntersville, NC)
Assignee: Akoustis, Inc.
H04B7/0814H03F1/26H03F3/195H03F3/72H03H3/02H04B1/006H03F2200/294H03F2200/451H03F2203/7239H03H9/02118H03H9/173H03H9/175H03H2003/023H03H2003/025
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Quick Facts
Patent No.
US 11,611,386
App. No.
17/841,485
Granted
Mar 21, 2023
Kind
B2
Abstract

A front-end module (FEM) for a 6.1 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 6.1 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 6.1 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 6.1 GHz PA, a 6.1 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

Claims (44)

1. A front end module, comprising:

a bulk acoustic wave (BAW) filter including:

an input node;

an output node; and

a plurality of BAW resonators arranged in a circuit having a series circuit configuration and parallel circuit configuration, the circuit electrically coupled to the input node and the output node, each of the BAW resonators comprising:

a reflector;

a bottom electrode overlying the reflector;

a piezoelectric material overlying the bottom electrode;

a top electrode overlying the piezoelectric material and the bottom electrode; and

an insulating material overlying the top electrode;

at least one BAW resonator of the plurality of BAW resonators, including:

an electrode contact via through the piezoelectric material; and

a top metal overlying the piezoelectric material, the top metal being physically coupled to the bottom electrode through the electrode contact via; and

the circuit, resulting from the series circuit configuration and the parallel circuit configuration of the plurality of BAW resonators having a circuit response between the input port and the output port of a transmission loss from a pass band having a characteristic frequency centered around 6.1 GHz and having a bandwidth from 5.1 GHz to 7.1 GHz such that the characteristic frequency centered around 6.1 GHz is tunable from a lower frequency ranging from about 4.3 GHz to 5.4 GHz.

2. The front end module of claim 1 , wherein the reflector of at least one resonator of the plurality of resonators includes an air cavity.

3. The front end module of claim 1 , wherein the reflector of at least one resonator of the plurality of resonators includes a mirror structure comprising at least one low impedance material layer and at least one high impedance material layer when the material layers are compared to each other.

4. The front end module of claim 1 , further comprising:

an input node; and

a power amplifier electrically coupled to the input node and the BAW filter.

5. The front end module of claim 1 , further comprising:

a diversity switch electrically coupled to the BAW filter.

6. The front end module of claim 5 , further comprising:

an output node electrically coupled to the diversity switch; and

an antenna node electrically coupled to the diversity switch.

7. The front end module of claim 5 , further comprising:

an antenna node electrically coupled to the diversity switch; and

a second BAW filter electrically coupled to the diversity switch.

8. The front end module of claim 7 , further comprising:

an output node electrically coupled to the second BAW filter.

9. The front end module of claim 8 , further comprising:

a low noise amplifier electrically coupled between the second BAW filter and the output node.

10. The front end module of claim 9 , wherein the low noise amplifier is electrically coupled to the diversity switch.

11. The front end module of claim 1 , further comprising:

a circuit including:

a power amplifier;

a bypassable low noise amplifier; and

a diversity switch electrically coupled to the power amplifier, the low noise amplifier, and an antenna node, wherein the BAW filter is electrically coupled to at least one of the power amplifier, the low noise amplifier, and the antenna node.

12. The front end module of claim 1 , wherein the reflector of at least one of the plurality of BAW resonators is a Bragg reflector.

13. The front end module of claim 1 , wherein the piezoelectric material of at least one of the plurality of resonators includes an essentially single crystal aluminum nitride (AlN) bearing material, an essentially single crystal aluminum scandium nitride (AlScN) bearing material, an essentially single crystal gallium nitride (GaN) bearing material, or an essentially single crystal gallium aluminum nitride (GaAlN) bearing material.

14. The front end module of claim 1 , wherein the piezoelectric material of the first resonator, the second resonator, and the third resonator include a polycrystalline aluminum nitride (AlN) bearing material, a polycrystalline aluminum scandium nitride (AlScN) bearing material, a polycrystalline gallium nitride (GaN) bearing material or a polycrystalline gallium aluminum nitride (GaAlN) bearing material.

15. The front end module of claim 1 , wherein the insulating material of at least one of the plurality of BAW resonators comprises one of a silicon nitride bearing material or an oxide bearing material configured with a silicon nitride material or an oxide bearing material.

16. The front end module of claim 1 , wherein the reflector of at least one resonator of the plurality of resonators includes a mirror structure comprising:

a first pair of material layers with one layer being a low impedance material layer and the other layer being a high impedance material layer when the material layers are compared to each other; and

a second pair of material layers with one layer being a low impedance material layer and the other layer being a high impedance material layer when the material layers are compared to each other.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2025
From: AKOUSTIS TECHNOLOGIES, INC.; AKOUSTIS, INC.; RFM INTEGRATED DEVICE INC.
To: TUNE HOLDINGS CORP.
Reel/Frame 071576/0297 →
CHANGE OF NAME Recorded Jul 1, 2025
From: TUNE HOLDINGS CORP.
To: AKOUSTIS TECHNOLOGIES CORP.
Reel/Frame 071782/0085 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 16, 2022
From: SHEALY, JEFFREY B.; HOULDEN, ROHAN W.; AICHELE, DAVID M.
To: AKOUSTIS, INC.
Reel/Frame 060225/0927 →
Continuity (7)
Continuation 17198927 · Mar 11, 2021
Continuation In Part 15931413 · May 13, 2020
Continuation 16135276 · Sep 19, 2018
Continuation In Part 16019267 · Jun 26, 2018
Continuation In Part 15784919 · Oct 16, 2017
Continuation In Part 15068510 · Mar 11, 2016
Related Publication 20220311502A1 · Sep 29, 2022