IP Library › Granted Patent US 12,444,628
Granted Patent B2
US 12,444,628 · App. 17/849,554 · Granted Oct 14, 2025

Image modeling-assisted contour extraction

Inventors: Stefan Eyring (Weilburg, DE); Zhijin Chen (Milpitas, CA); Frank Laske (Weilmunster, DE)
Assignee: KLA CORPORATION
H01L21/67276G06T7/0004G06T2207/30148
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,444,628
App. No.
17/849,554
Filed
Jun 24, 2022
Granted
Oct 14, 2025
Kind
B2
Examiner
CRUZ, IRIANA
Art Unit
2681
USPC
382/145
Abstract

A wafer metrology tool, such as a scanning electron microscope, can generate an image of a structure on a wafer. A simulated image of the structure also is determined from a design of the wafer. A contour of the structure in the image and a contour of the structure in the simulated image are determined. These contours are compared.

Claims (39)

1. A system comprising:

a particle beam source that generates a particle beam;

a stage configured to hold a wafer in a path of the particle beam;

a detector that receives particles from the wafer; and

a processor in electronic communication with the detector, wherein the processor is configured to:

receive an image of a structure on the wafer;

determine a contour of a structure in the image of the wafer;

determine a simulated image of the structure from a design of the wafer, wherein the simulated image includes at least one error that accounts for noise sources and imaging properties of the system;

determine a contour of the structure in the simulated image;

compare the contour of the structure in the image and the contour of the structure in the simulated image;

determine a difference in polygons between the contour of the structure in the image and the contour of the structure in the simulated image;

determine a modified design of the structure based on the difference in polygons;

determine a second simulated image of the structure from the modified design, wherein the second simulated image accounts for noise sources and imaging properties of the system;

determine a contour of the structure in the second simulated image; and

compare the contour of the structure in the image and the contour of the structure in the second simulated image.

2. The system of claim 1 , wherein the system is a scanning electron microscope.

3. The system of claim 1 , wherein the particles are electrons and the particle beam is an electron beam.

4. The system of claim 1 , wherein the processor is further configured to report the difference in polygons when the difference in polygons is below a threshold.

5. The system of claim 1 , wherein comparing the contour includes dividing each segment into blocks with a fixed size and comparing the blocks of the structure in the image and the simulated image.

6. The system of claim 1 , wherein comparing the contour includes matching one or more vertices along the contour in the image and the contour in the simulated image.

7. A method comprising:

directing a particle beam at a wafer using a wafer metrology tool;

generating, using a processor, an image of the wafer based on particles reflected from the wafer;

determining, using the processor, a contour of a structure in the image of the wafer;

determining, using the processor, a simulated image of the structure from a design of the wafer, wherein the simulated image includes at least one error that accounts for noise sources and imaging properties of the wafer metrology tool;

determining, using the processor, a contour of the structure in the simulated image; and

comparing, using the processor, the contour of the structure in the image and the contour of the structure in the simulated image;

determining a difference in polygons between the contour of the structure in the image and the contour of the structure in the simulated image using the processor;

determining a modified design of the structure based on the difference in polygons using the processor;

determining, using the processor, a second simulated image of the structure from the modified design, wherein the second simulated image accounts for noise sources and imaging properties of the wafer metrology tool;

determining, using the processor, a contour of the structure in the second simulated image; and

comparing, using the processor, the contour of the structure in the image and the contour of the structure in the second simulated image.

8. The method of claim 7 , wherein the wafer metrology tool is a scanning electron microscope.

9. The method of claim 7 , wherein the particle beam is an electron beam and the particles are electrons.

10. The method of claim 7 , further comprising reporting the difference in polygons when the difference in polygons is below a threshold.

11. A non-transitory computer readable medium storing a program configured to instruct a processor to execute the method of claim 7 .

12. The method of claim 7 , wherein comparing the contour includes dividing each segment into blocks with a fixed size and comparing the blocks of the structure in the image and the simulated image.

13. The method of claim 7 , wherein comparing the contour includes matching one or more vertices along the contour in the image and the contour in the simulated image.

14. The method of claim 7 , wherein the particle beam has a high beam current configured to measure buried layers of the wafer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 30, 2022
From: EYRING, STEFAN; CHEN, ZHIJIN; LASKE, FRANK
To: KLA CORPORATION
Reel/Frame 060942/0187 →
Continuity (1)
Related Publication 20230420278A1 · Dec 28, 2023
References Cited (15)
US 10185800B2 · Eyring et al. · 2019 [cited by applicant]
US 10901325B2 · Gurevich et al. · 2021 [cited by applicant]
US 20070187595A1 · Tanaka et al. · 2007 [cited by applicant]
US 20130166240A1 · Shishido et al. · 2013 [cited by applicant]
US 20150110384A1 · Luoh et al. · 2015 [cited by applicant]
US 20150212019A1 · Shishido et al. · 2015 [cited by applicant]
US 20180218492A1 · Zhang · 2018 [cited by examiner]
US 20180293721A1 · Gupta · 2018 [cited by examiner]
US 20220042936A1 · Okai · 2022 [cited by examiner]
US 20220137514A1 · Wang · 2022 [cited by examiner]
US 20220404712A1 · Zhang · 2022 [cited by examiner]
US 20230401727A1 · Wang · 2023 [cited by examiner]
KR 20220030897A · 2022 [cited by applicant]
Villarrubia et al. 3D Monte Carlo Modeling of the SEM: Are There Applications to Photomask Metrology, Proc. of SPIE, 2014, 923602-1 to 923602-12, vol. 9236. [cited by applicant]
WIPO, International Search Report for International Application No. PCT/US2023/024218, Sep. 26, 2023. [cited by applicant]