Semiconductor structure having photonic die and electronic die
View Patent ↗A semiconductor structure includes an encapsulated die including an electronic die and an insulating layer laterally covering the electronic die, and a photonic die coupled to the encapsulated die. The photonic die includes an optical device in proximity to an edge coupling facet of a portion of a sidewall of the photonic die, wherein a surface roughness of the edge coupling facet is less than a surface roughness of a sidewall of the insulating layer or a surface roughness of another portion of the sidewall of the photonic die.
1. A semiconductor structure, comprising:
an encapsulated die comprising an electronic die and an insulating layer laterally covering the electronic die; and
a photonic die coupled to the encapsulated die and comprising:
an optical device in proximity to an edge coupling facet of a portion of a sidewall of the photonic die, wherein a surface roughness of the edge coupling facet is less than a surface roughness of a sidewall of the insulating layer or a surface roughness of another portion of the sidewall of the photonic die.
2. The semiconductor structure of claim 1 , wherein:
the edge coupling facet is on a recessed portion of the photonic die,
the recess portion of the photonic die is interposed between the encapsulated die and a protruded portion of the photonic die, and
the surface roughness of the edge coupling facet is less than a surface roughness of the protruded portion of the photonic die.
3. The semiconductor structure of claim 2 , further comprising:
a supporting substrate overlying the encapsulated die, wherein a surface roughness of a sidewall of the supporting substrate is less than the surface roughness of the protruded portion of the photonic die.
4. The semiconductor structure of claim 1 , wherein:
the edge coupling facet is on a recessed portion of the photonic die,
a protruded portion of the photonic die is interposed between the encapsulated die and the recessed portion of the photonic die, and
the surface roughness of the edge coupling facet is less than a surface roughness of the protruded portion of the photonic die.
5. The semiconductor structure of claim 4 , further comprising:
a supporting substrate overlying the encapsulated die, wherein a surface roughness of a sidewall of the supporting substrate is greater than the surface roughness of the edge coupling facet of the photonic die.
6. The semiconductor structure of claim 1 , wherein:
a recessed portion of the insulating layer is between a protruded portion of the insulating layer and the photonic die, and
the surface roughness of the edge coupling facet is less than a surface roughness of a sidewall of the protruded portion of the insulating layer.
7. The semiconductor structure of claim 6 , wherein the surface roughness of the sidewall of the protruded portion of the insulating layer is greater than a surface roughness of a sidewall of the recessed portion of the insulating layer.
8. The semiconductor structure of claim 6 , further comprising:
a supporting substrate overlying the encapsulated die, wherein a surface roughness of a sidewall of the supporting substrate is greater than the surface roughness of the edge coupling facet of the photonic die.
9. A semiconductor structure, comprising:
an encapsulated die comprising an electronic die and an insulating layer laterally covering the electronic die; and
a photonic die coupled to the encapsulated die and comprising:
a first portion underlying the electronic die and having a first width substantially equal to a width of the encapsulated die;
a second portion underlying the first portion and having a second width different from the first width; and
an optical device embedded in the first portion or the second portion and being in proximity to an edge coupling facet of the photonic die.
10. The semiconductor structure of claim 9 , wherein the first width of the first portion is less than the second width of the second portion.
11. The semiconductor structure of claim 10 , wherein the optical device is embedded in the first portion, and the edge coupling facet on a sidewall of the first portion is smoother than a sidewall of the second portion.
12. The semiconductor structure of claim 10 , wherein:
the photonic die comprises a semiconductor substrate and an interconnect structure overlying the semiconductor substrate,
the first portion is a lower portion of the semiconductor substrate, and
the second portion comprises an upper portion of the semiconductor substrate connected to the lower portion, and the interconnect structure overlying the upper portion of the semiconductor substrate.
13. The semiconductor structure of claim 10 , further comprising:
a supporting substrate overlying the encapsulated die and having a width substantially equal to the width of the encapsulated die.
14. The semiconductor structure of claim 9 , wherein the first width of the first portion is greater than the second width of the second portion.
15. The semiconductor structure of claim 14 , wherein the optical device is embedded in the second portion, and a sidewall of the first portion is rougher than the edge coupling facet on a sidewall of the second portion.
16. The semiconductor structure of claim 14 , wherein:
the photonic die comprises a semiconductor substrate and an interconnect structure overlying the semiconductor substrate,
the first portion is an upper portion of the interconnect structure, and
the second portion comprises a lower portion of the interconnect structure connected to the upper portion, and the semiconductor substrate.
17. The semiconductor structure of claim 14 , further comprising:
a supporting substrate overlying the encapsulated die and having a width substantially equal to the width of the encapsulated die.
18. A semiconductor structure, comprising:
an encapsulated die comprising an electronic die and an insulating layer laterally covering the electronic die, the insulating layer comprising a protruded portion and a recessed portion connected to the protruded portion; and
a photonic die coupled to the encapsulated die and comprising:
an optical device in proximity to an edge coupling facet of the photonic die, wherein a surface roughness of the edge coupling facet is less than a surface roughness of a sidewall of the protruded portion of the insulating layer.
19. The semiconductor structure of claim 18 , wherein the recessed portion of the insulating layer is between the protruded portion and the photonic die and has a width substantially equal to a width of the photonic die.
20. The semiconductor structure of claim 18 , wherein a surface roughness of a sidewall of the recessed portion of the insulating layer is less than the surface roughness of the sidewall of the protruded portion of the insulating layer.