Zinc oxide nanomaterial and preparation method thereof and semiconductor device
A zinc oxide (ZnO) nanomaterial includes a ZnO nanoparticle and a surface ligand. The surface ligand bonded to the ZnO nanoparticle has a structure of R 1 , R 2 , R 3 , R 4 , and R 5 are independently selected from at least one of hydrogen, alkoxy group with a carbon number of one to three, or amino group. R 1 , R 2 , R 3 , R 4 , and R 5 include one to three alkoxy groups with a carbon number of one to three and zero to one amino group.
1 . A zinc oxide (ZnO) nanomaterial comprising:
a ZnO nanoparticle; and
a surface ligand bonded to the ZnO nanoparticle, the surface ligand being at least one selected from m-methoxybenzamide, o-methoxybenzamide, p-ethoxybenzamide, m-ethoxybenzamide, o-ethoxybenzamide, 2,5-dimethoxybenzamide, 3,5-dimethoxybenzamide, 2,4-dimethoxybenzamide, 3,4-dimethoxybenzamide, or 5-amino-4-methoxybenzamide
2 . The ZnO nanomaterial according to claim 1 , wherein the ZnO nanomaterial is composed of the ZnO nanoparticle and the surface ligand bonded to the ZnO nanoparticle.
3 . The ZnO nanomaterial according to claim 1 , wherein a molar ratio of the ZnO nanoparticle to the surface ligand bonded to the ZnO nanoparticle ranges from 1:5 to 1:50.
4 . A preparation method of a zinc oxide (ZnO) nanomaterial comprising:
preparing a mixed solution of a ZnO nanoparticle and a surface ligand; and
causing the ZnO nanoparticle to react with the surface ligand in the mixed solution to prepare ZnO nanoparticle having the surface ligand bonded thereto;
wherein:
the surface ligand has a structure of
R 1 , R 2 , R 3 , R 4 , and R 5 are independently selected from at least one of hydrogen, alkoxy group with a carbon number of one to three, or amino group; and
R 1 , R 2 , R 3 , R 4 , and R 5 include:
one to three alkoxy groups with a carbon number of one to three; and
zero to one amino group.
5 . The method according to claim 4 , wherein:
R 1 , R 2 , R 3 , R 4 , and R 5 include:
two alkoxy groups with a carbon number of one to three; and
zero to one amino group; and
at least R 2 or R 3 is selected from alkoxy group with a carbon number of one to three.
6 . The method according to claim 4 , wherein the surface ligand is at least one selected from p-methoxybenzamide, m-methoxybenzamide, o-methoxybenzamide, p-ethoxybenzamide, m-ethoxybenzamide, o-ethoxybenzamide, 2,5-dimethoxybenzamide, 3,5-dimethoxybenzamide, 2,5-dimethoxybenzamide, 3,4-dimethoxybenzamide, or 5-amino-4-methoxybenzamide.
7 . The method according to claim 4 , wherein the ZnO nanomaterial is composed of the ZnO nanoparticle and the surface ligand bonded to the ZnO nanoparticle.
8 . The method according to claim 4 , wherein in the mixed solution, a molar ratio of the ZnO nanoparticle to the surface ligand ranges from 1:5 to 1:50.
9 . The method according to claim 4 , wherein during preparing the mixed solution and reacting to prepare the ZnO nanoparticle having the ligand, a reaction temperature ranges from 20 to 60° C.
10 . A semiconductor device comprising:
an anode and a cathode arranged oppositely to each other;
an active layer arranged between the anode and the cathode; and
an electron transport layer arranged between the active layer and the cathode;
wherein:
a material of the electron transport layer includes a zinc oxide (ZnO) nanomaterial;
the ZnO nanomaterial includes:
a ZnO nanoparticle; and
a surface ligand bonded to the ZnO nanoparticle, the surface ligand being at least one selected from m-methoxybenzamide, o-methoxybenzamide, p-ethoxybenzamide, m-ethoxybenzamide, o-ethoxybenzamide, 2,5-dimethoxybenzamide, 3,5-dimethoxybenzamide, 2,4-dimethoxybenzamide, 3,4-dimethoxybenzamide, or 5-amino-4-methoxybenzamide
11 . The semiconductor device according to claim 10 , wherein the ZnO nanomaterial is composed of the ZnO nanoparticle and the surface ligand bonded to the ZnO nanoparticle.
12 . The semiconductor device according to claim 10 , wherein a molar ratio of the ZnO nanoparticle to the surface ligand bonded to the ZnO nanoparticle ranges from 1:5 to 1:50.
13 . The semiconductor device according to claim 10 , wherein the active layer is a quantum dot light-emitting layer.
14 . The semiconductor device according to claim 13 , wherein the quantum dot light-emitting layer is at least selected from cadmium sulfide (CdS) or cadmium selenide (CdSe).
15 . The semiconductor device according to claim 10 , wherein:
the anode is at least selected from a doped metal oxide; and
the cathode is at least selected from a conductive carbon material, a conductive metal oxide material, or a metal material.
16 . The semiconductor device according to claim 10 , further comprising:
a hole functional layer including:
a hole injection layer; and
a hole transport layer at least selected from poly([(9,9-dioctylfluorene-alt-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)-)diphenylamine))] (TFB) or polyvinylcarbazole (PVK).