Organic photodiode, sensor, camera, and electronic device
An organic photodiode includes a first electrode including a reflective layer, a second electrode including a semi-transmissive layer, a photoelectric conversion layer between the first electrode and the second electrode and including an organic light absorbing material, and a buffer layer that is at least one of between the reflective layer and the photoelectric conversion layer or between the semi-transmissive layer and the photoelectric conversion layer. The organic photodiode is configured to exhibit at least three external quantum efficiency (EQE) spectra in a wavelength region of about 380 nm to about 3000 nm and each EQE spectrum of the at least three EQE spectra has a full width at half maximum of about 2 nm to about 100 nm.
1. An organic photodiode, comprising:
a first electrode, the first electrode including a reflective layer,
a second electrode, the second electrode including a semi-transmissive layer,
a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer including an organic light absorbing material, and
a first buffer layer that is
between the reflective layer and the photoelectric conversion layer, or
between the semi-transmissive layer and the photoelectric conversion layer,
wherein a thickness of the first buffer layer is about 10 times to about 1000 times a thickness of the photoelectric conversion layer.
2. The organic photodiode of claim 1 , wherein
the first buffer layer is between the reflective layer and the photoelectric conversion layer.
3. The organic photodiode of claim 2 , wherein the thickness of the first buffer layer is about 400 nm to about 50 μm.
4. The organic photodiode of claim 2 , wherein
the organic photodiode further comprises a second buffer layer between the semi-transmissive layer and the photoelectric conversion layer.
5. The organic photodiode of claim 1 , wherein an absorption spectrum of the photoelectric conversion layer is a single absorption spectrum belonging to a red wavelength region, a green wavelength region, a blue wavelength region, an infrared wavelength region, or any combination thereof.
6. A sensor comprising the organic photodiode of claim 1 .
7. The sensor of claim 6 , wherein the sensor comprises a multi spectral image sensor or a hyperspectral image sensor.
8. A camera comprising the sensor of claim 6 .
9. An electronic device comprising the sensor of claim 6 .
10. An organic photodiode, comprising:
a first electrode and a second electrode facing each other; and;
a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer including an organic light absorbing material; and
a buffer layer,
wherein the first electrode comprises a reflective layer,
wherein the second electrode comprises a semi-transmissive layer,
wherein the buffer layer is
between the reflective layer and the photoelectric conversion layer, or
between the semi-transmissive layer and the photoelectric conversion layer
wherein the photoelectric conversion layer is configured to exhibit a single absorption spectrum within a visible light wavelength region, and
wherein a thickness of the buffer layer is about 10 times to about 1000 times a thickness of the photoelectric conversion layer.
11. The organic photodiode of claim 10 , wherein
the thickness of the photoelectric conversion layer is about 5 nm to about 300 nm, and
the thickness of the buffer layer is about 400 nm to about 50 μm.
12. A sensor comprising the organic photodiode of claim 10 .
13. The sensor of claim 12 , wherein the sensor comprises a multi spectral image sensor or a hyperspectral image sensor.
14. A camera comprising the sensor of claim 12 .
15. An electronic device comprising the sensor of claim 12 .
16. An organic photodiode, comprising:
a first electrode and a second electrode facing each other, wherein the first electrode includes a reflective layer and the second electrode includes a semi-transmissive layer;
a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer including an organic light absorbing material; and
buffer layer that is at least one of
between the first electrode and the photoelectric conversion layer, or
between the second electrode and the photoelectric conversion layer,
wherein the reflective layer and the semi-transmissive layer collectively define a microcavity extending between the reflective layer and the semi-transmissive layer and through the photoelectric conversion layer,
wherein a thickness of the buffer layer is about 10 times to about 1000 times a thickness of the photoelectric conversion layer.
17. A sensor comprising the organic photodiode of claim 16 .
18. The sensor of claim 17 , wherein the sensor comprises a multi spectral image sensor or a hyperspectral image sensor.
19. A camera comprising the sensor of claim 17 .
20. An electronic device comprising the sensor of claim 17 .