Method for forming carbon rich silicon-containing films
Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with O 2 plasma.
1. A method of forming a silicon oxycarbonitride film on a microelectronic device substrate, comprising exposing said substrate to
(i) a silicon precursor compound having the Formula (I)
wherein R 1 , R 2 , and R 3 are independently chosen from hydrogen or C 1 -C 6 alkyl, and each X and each Y, are independently chosen from hydrogen, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkylamino, C 1 -C 6 dialkylamino, and C 1 -C 6 alkylhydrazido;
(ii) a co-reactant chosen from ammonia and nitrous oxide, under vapor deposition conditions, wherein said silicon oxycarbonitride film possesses a pre-selected atomic percentage of carbon of from 55% to 60%;
exposing the substrate to an etch such that the silicon oxycarbonitride film acts as an etch stop; and
converting the silicon oxycarbonitride film into a silicon oxide film using an oxygen plasma.
2. The method of claim 1 , wherein X and Y are chosen from halogen, methyl, and propyl.
3. The method of claim 1 , wherein the compound of Formula (I) is
4. The method of claim 1 , wherein the co-reactant comprises nitrous oxide.
5. The method of claim 1 , wherein the co-reactant comprises any combination of at least two of oxygen, ammonia, and nitrous oxide.
6. The method of claim 1 , wherein the co-reactant comprises a mixture of oxygen, ammonia, and nitrous oxide.
7. The method of claim 1 , wherein X is halogen.
8. The method of claim 1 , wherein X is propyl.
9. The method of claim 1 , wherein X differs from Y.
10. The method of claim 1 , wherein R 1 and R 2 are the same.
11. A method of forming a silicon oxide film comprising:
forming a silicon oxycarbonitride film on a substrate;
using the silicon oxycarbonitride film as an etch stop; and
converting the silicon oxycarbonitride film into a silicon oxide film using an oxygen plasma.
12. The method of claim 11 , wherein forming the silicon oxycarbonitride film comprises contacting the substrate with a precursor having the Formula (I)
wherein R 1 , R 2 , and R 3 are independently chosen from hydrogen or C 1 -C 6 alkyl, and each X and each Y, are independently chosen from hydrogen, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkylamino, C 1 -C 6 dialkylamino, and C 1 -C 6 alkylhydrazido.
13. The method of claim 11 , further comprising performing an acid etch using hydrofluoric acid (dHF).
14. The method of claim 11 , further comprising performing an acid etch using phosphoric acid.
15. The method of claim 11 , wherein the silicon oxide film is greater than 99 atomic % silicon and oxygen.
16. A method of producing multiple types of coatings using a shared precursor comprising:
forming a less than 20 atomic % carbon silicon oxycarbonitride film using a precursor of Formula (i)
wherein R 1 , R 2 , and R 3 are independently chosen from hydrogen or C 1 -C 6 alkyl, and each X and each Y, are independently chosen from hydrogen, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkylamino, C 1 -C 6 dialkylamino, and C 1 -C 6 alkylhydrazido with an oxygen-containing coreactant;
forming a greater than 50 atomic % carbon silicon oxycarbonitride film using the same precursor with a nitrogen-containing coreactant, and
converting the silicon oxycarbonitride films into silicon oxide using an oxygen plasma.
17. The method of claim 16 , further comprising treating the less than 20 atomic % carbon silicon oxycarbonitride film and the greater than 50 atomic % carbon silicon oxycarbonitride film with an acid etch.