Over-energy protection circuit, residual current device, electronic device, and power distribution box

1. An over-energy protection circuit, applied to a residual current device, wherein the residual current device comprises:

the over-energy protection circuit,

a current transformer, and

a release;

the over-energy protection circuit comprises:

a first over-energy absorption circuit,

a second over-energy absorption circuit, and

a residual current determining circuit; the first over-energy absorption circuit is connected to a secondary side of the current transformer, and is configured to:

receive a first electrical signal output from the secondary side of the current transformer; and when a voltage value of the first electrical signal is greater than or equal to a first preset threshold,

perform step-down processing on the voltage value of the first electrical signal to obtain a second electrical signal, and

output the second electrical signal to the second over-energy absorption circuit; or

when a voltage value of the first electrical signal is less than the first preset threshold, output the first electrical signal to the second over-energy absorption circuit; the second over-energy absorption circuit is connected to an output end of the first over-energy absorption circuit, and is configured to:

when an input current input to the second over-energy absorption circuit is greater than or equal to a second preset threshold, absorb energy of the input current; or

when a current input to the second over-energy absorption circuit is less than the second preset threshold, output the input current to the residual current determining circuit; and the residual current determining circuit is connected to an output end of the second over-energy absorption circuit and the release and is configured to when the current flowing to the residual current control circuit meets a predetermined condition, control the release to be disconnected.

2. The over-energy protection circuit according to claim 1 , wherein the second over-energy absorption circuit further comprises:

R1, R2, R3, R4, first diodes D1 and D2, a first PNP triode, and a first NPN triode, an anode of D1 is a first terminal of an input end of the second over-energy absorption circuit, a collector of the first PNP triode is a second terminal of the input end of the second over-energy absorption circuit, a first end of R2 is a first terminal of the output end of the second over-energy absorption circuit, and a second end of R4 is a second terminal of the output end of the second over-energy absorption circuit, the anode of D1 is connected to a first terminal of the output end of the first over-energy absorption circuit and a cathode of D2, and a cathode of D1 is connected to a first end of R1, a second end of the first R1 is connected to the first end of R2 and an emitter of the first PNP triode, a second end of R2 is connected to a base of the first PNP triode, the collector of the first PNP triode is connected to a collector of the first NPN triode and a second terminal of the output end of the first over-energy absorption circuit, an anode of D2 is connected to a first end of R3, and an emitter of the first NPN triode is connected to the first end of R3 and a first end of R4, and a base of the first NPN triode is connected to the second end of R4.

3. The over-energy protection circuit according to claim 1 , wherein the second over-energy absorption circuit further comprises:

R5, R6, D3, D4, a first P-channel metal oxide semiconductor MOS transistor, and a first N-channel MOS transistor, an anode of D3 is a first terminal of an input end of the second over-energy absorption circuit, a drain of the first N-channel MOS transistor is a second terminal of the input end of the second over-energy absorption circuit, a second end of R5 is a first terminal of the output end of the second over-energy absorption circuit, and a second end of R6 is a second terminal of the output end of the second over-energy absorption circuit; the anode of D3 is connected to a first terminal of the output end of the first over-energy absorption circuit and a cathode of D4, and a cathode of D3 is connected to a first end of R5 and a source of the first N-channel MOS transistor, the second end of R5 is connected to a gate of the first N-channel MOS transistor; a drain of the first P-channel MOS transistor is connected to the drain of the first N-channel MOS transistor and a second terminal of the output end of the first over-energy absorption circuit, a source of the first P-channel MOS transistor is connected to a first end of R6, and a gate of the first P-channel MOS transistor is connected to the second end of R6, and the first end of R6 is connected to an anode of D4.

4. The over-energy protection circuit according to claim 1 , wherein the second over-energy absorption circuit further comprises:

R7, R8, D5, D6, D7, D8, and a second PNP triode; an anode of D5 is a first terminal of an input end of the second over-energy absorption circuit, a cathode of D8 is a second terminal of the input end of the second over-energy absorption circuit, a second end of R8 is a first terminal of the output end of the second over-energy absorption circuit, and an anode of D8 is a second terminal of the output end of the second over-energy absorption circuit, the anode of D5 is connected to a first terminal of the output end of the first over-energy absorption circuit and a cathode of D6, and a cathode of D5 is connected to a cathode of D7 and a first end of R7, the cathode of D8 is connected to an anode of D7 and a second terminal of the output end of the first over-energy absorption circuit, and the anode of D8 is connected to an anode of D6 and a collector of the second PNP crystal triode, a second end of R7 is connected to an emitter of the second PNP triode and a first end of R8, and the second end of R8 is connected to a base of the second PNP triode.

5. The over-energy protection circuit according to claim 1 , wherein the second over-energy absorption circuit further comprises:

R9, R10, D9, D10, D11, D12, and a second NPN triode, an anode of D9 is a first terminal of an input end of the second over-energy absorption circuit, a cathode of D12 is a second terminal of the input end of the second over-energy absorption circuit, a cathode of D11 is a first terminal of the output end of the second over-energy absorption circuit, and a second end of R10 is a second terminal of the output end of the second over-energy absorption circuit, the anode of D9 is connected to a first terminal of the output end of the first over-energy absorption circuit and a cathode of D10, and a cathode of D9 is connected to the cathode of D11 and a collector of the second NPN triode, the cathode of D12 is connected to an anode of D11 and a second terminal of the output end of the first over-energy absorption circuit, and an anode of D12 is connected to an anode of D10 and a first end of R9, a second end of R9 is connected to a first end of R10 and an emitter of the second NPN triode, and the second end of R10 is connected to a base of the second NPN triode.

6. The over-energy protection circuit according to claim 1 , wherein the second over-energy absorption circuit further comprises:

R11, D13, D14, D15, D16, and a second P-channel MOS transistor, an anode of D13 is a first terminal of an input end of the second over-energy absorption circuit, a cathode of D16 is a second terminal of the input end of the second over-energy absorption circuit, a cathode of D15 is a first terminal of the output end of the second over-energy absorption circuit, and a second end of R11 is a second terminal of the output end of the second over-energy absorption circuit, the anode of D13 is connected to a first terminal of the output end of the first over-energy absorption circuit and a cathode of D14, and a cathode of D13 is connected to a drain of the second P-channel MOS transistor, the cathode of D16 is connected to an anode of D15 and a second terminal of the output end of the first over-energy absorption circuit, and an anode of D16 is connected to an anode of D14 and a source of the second P-channel MOS transistor, and the source of the second P-channel MOS transistor is connected to a first end of R11, and a gate of the second P-channel MOS transistor is connected to the second end of R11.

7. The over-energy protection circuit according to claim 1 , wherein the second over-energy absorption circuit further comprises:

R12, D17, D18, D19, D20, and a second N-channel MOS transistor, an anode of D17 is a first terminal of an input end of the second over-energy absorption circuit, a cathode of D20 is a second terminal of the input end of the second over-energy absorption circuit, a second end of R12 is a first terminal of the output end of the second over-energy absorption circuit, and an anode of D20 is a second terminal of the output end of the second over-energy absorption circuit, the anode of D17 is connected to a first terminal of the output end of the first over-energy absorption circuit and a cathode of D18, and a cathode of D17 is connected to a cathode of D19 and a source of the second N-channel MOS transistor, the cathode of D20 is connected to a second terminal of the output end of the first over-energy absorption circuit and an anode of D19, and the anode of D20 is separately connected to an anode of D18 and a drain of the second N-channel MOS transistor, and the source of the second N-channel MOS transistor is connected to a first end of R12, and a gate of the second N-channel MOS transistor is connected to the second end of R12.

8. The over-energy protection circuit according to claim 1 , wherein the first over-energy absorption circuit further comprises:

at least two transient suppression diodes, and the at least two transient suppression diodes are configured to:

when the voltage value of the first electrical signal is greater than or equal to the first preset threshold, perform step-down processing on the voltage value of the first electrical signal to obtain the second electrical signal, and output the second electrical signal to the second over-energy absorption circuit; or

when the voltage value of the first electrical signal is less than the first preset threshold, output the first electrical signal to the second over-energy absorption circuit.

9. The over-energy protection circuit according to claim 1 , further comprising:

a voltage regulator circuit, wherein the voltage regulator circuit is connected between the secondary side of the current transformer and the first over-energy absorption circuit, and is configured to regulate the voltage value and a current value of the first electrical signal; the voltage regulator circuit comprises: R13 and a first capacitor, a first end of R13 is connected to a first terminal of the secondary side of the current transformer, and a second end of R13 is connected to a second terminal of the secondary side of the current transformer, and a first end of the first capacitor is connected to the first end of R13, and a second end of the first capacitor is connected to the second end of R13.

10. The over-energy protection circuit according to claim 2 , wherein the residual current determining circuit further comprises:

a detector, wherein the detector is connected to the output end of the second over-energy absorption circuit, and the detector is configured to:

when a value of the current flowing to the residual current control circuit is greater than or equal to a third preset threshold, send a drive signal to a drive circuit; and the drive circuit, wherein the drive circuit is connected to the detector, and the drive circuit is configured to:

when receiving the drive signal, amplify power of the drive signal to generate a control signal, and send the control signal to the release, so as to control the release to be disconnected.

11. The over-energy protection circuit according to claim 10 , wherein the drive circuit further comprises:

R14, R15, R16, R17, D21, a second capacitor, and a third NPN triode, a first end of R14 is connected to an anode of D21 and a first output terminal of the detector, and a second end of R14 is connected to a second output terminal of the detector and a second end of R15, a cathode of D21 is connected to the second end of R15 and a second end of R16, the second end of R16 is connected to a first end of the second capacitor and a first end of R17, and an emitter of the third NPN triode is connected to a coil of the release, a base of the third NPN triode is connected to a second end of R17, and the emitter of the third NPN triode is connected to a second end of the second capacitor.

12. The over-energy protection circuit according to claim 10 , wherein the detector further comprises:

a comparator; and

a third capacitor, a first end of the third capacitor is connected to the first terminal of the output end of the second over-energy absorption circuit, and a second end of the third capacitor is connected to the second terminal of the output end of the second over-energy absorption circuit, and a first input end of the comparator is connected to the first end of the third capacitor, a second input end of the comparator is connected to a reference power supply, and an output end of the comparator is connected to the drive circuit.

13. A residual current device, comprising the over-energy protection circuit according to claim 1 .

14. An electronic device, comprising the over-energy protection circuit according to claim 1 , a processor, and a memory, wherein the processor is configured to read code stored in the memory to perform data processing.

15. A power distribution box, comprising the over-energy protection circuit according to claim 1 .