Semiconductor device
According to one embodiment, a semiconductor device includes a first transistor which includes a an oxide semiconductor layer, and a second transistor connected to first and a second gate electrodes of the first transistor, wherein the oxide semiconductor layer is provided between the first and second gate electrodes in a cross-sectional view, the oxide semiconductor layer includes a first channel formation region overlapping the second gate electrode and a second channel formation region not overlapping the second gate electrode in a plan view, and a resistance value between the second gate electrode and the second transistor is higher than a resistance value between the first gate electrode and the second transistor.
1 . A semiconductor device comprising:
a first transistor comprising:
a first gate electrode;
an oxide semiconductor layer overlapping the first gate electrode;
a source electrode and a drain electrode each overlapping the oxide semiconductor layer; and
a second gate electrode overlapping a central portion of the oxide semiconductor layer;
a second transistor connected to the first gate electrode and the second gate electrode; and
a metal wiring line provided between the second gate electrode and the second transistor, wherein
the oxide semiconductor layer is provided between the first gate electrode and the second gate electrode in a cross-sectional view,
the oxide semiconductor layer includes a first channel formation region overlapping the second gate electrode and a second channel formation region not overlapping the second gate electrode in a plan view,
a resistance value between the second gate electrode and the second transistor is higher than a resistance value between the first gate electrode and the second transistor, and
the metal wiring has a higher resistance value than that of a wiring line provided between the first gate electrode and the second transistor.
2 . The semiconductor device according to claim 1 , wherein
the second transistor is a thin-film transistor of which a channel formation region is formed from a silicon layer.
3 . A semiconductor device comprising:
a first transistor comprising:
a first gate electrode;
an oxide semiconductor layer overlapping the first gate electrode;
a source electrode and a drain electrode each overlapping the oxide semiconductor layer;
a second gate electrode overlapping a central portion of the oxide semiconductor layer;
a second transistor connected to the first gate electrode and the second gate electrode; and
a metal wiring line provided between the second gate electrode and the second transistor, wherein
the oxide semiconductor layer is provided between the first gate electrode and the second gate electrode in a cross-sectional view,
the oxide semiconductor layer includes a first channel formation region overlapping the second gate electrode and a second channel formation region not overlapping the second gate electrode in a plan view,
a resistance value between the second gate electrode and the second transistor is higher than a resistance value between the first gate electrode and the second transistor, and
the metal wiring line has a less width and than that of a wiring line provided between the first gate electrode and the second transistor.
4 . The semiconductor device according to claim 3 , wherein
the second transistor is a thin-film transistor of which a channel formation region is formed from a silicon layer.
5 . A semiconductor device comprising:
a first transistor comprising:
a first gate electrode;
an oxide semiconductor layer overlapping the first gate electrode;
a source electrode and a drain electrode each overlapping the oxide semiconductor layer; and
a second gate electrode overlapping a central portion of the oxide semiconductor layer;
a second transistor connected to the first gate electrode and the second gate electrode; and
a third transistor connected to the second gate electrode, wherein
the oxide semiconductor layer is provided between the first gate electrode and the second gate electrode in a cross-sectional view,
the oxide semiconductor layer includes a first channel formation region overlapping the second gate electrode and a second channel formation region not overlapping the second gate electrode in a plan view,
a threshold value of the third transistor is higher than a threshold value of the second transistor, and
the second transistor and the third transistor are each a thin-film transistor of which a channel formation region is formed from a silicon layer.