Display device and method of fabricating the same
A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.
1. A display device comprising:
a substrate;
a thin-film transistor disposed on the substrate, the thin-film transistor including:
a lower gate conductive layer disposed on the substrate;
a lower gate insulating film disposed on the lower gate conductive layer, the lower gate insulating film including an upper surface and sidewalls; and
an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls, and
a buffer layer disposed between the lower gate conductive layer and the lower gate insulating film, wherein
at least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other, and
an oxygen content of the lower gate insulating film is higher than an oxygen content of the buffer layer.
2. The display device of claim 1 , wherein the active layer completely covers the upper surface of the lower gate insulating film.
3. The display device of claim 1 , wherein the lower gate insulating film is disposed to expose at least a portion of the substrate.
4. The display device of claim 3 , wherein the buffer layer is disposed on an entire surface of the substrate.
5. The display device of claim 4 , wherein
the active layer includes polycrystalline silicon,
the lower gate insulating film includes silicon oxide, and
the buffer layer includes a silicon oxide film.
6. The display device of claim 1 , wherein the thin-film transistor includes:
an upper gate insulating film disposed on the active layer;
an upper gate conductive layer disposed on the upper gate insulating film;
an interlayer insulating film disposed on the upper gate conductive layer;
a first electrode of the thin-film transistor; and
a second electrode of the thin-film transistor.
7. The display device of claim 6 , wherein the first electrode and the second electrode form a conductive layer disposed on the interlayer insulating film.
8. The display device of claim 6 , wherein the active layer includes:
a first doped region;
a second doped region; and
a channel region disposed between the first doped region and the second doped region,
wherein the first electrode and the second electrode of the thin-film transistor are electrically connected to the first doped region and the second doped region, respectively.
9. The display device of claim 8 , wherein a region in which the first electrode of the thin-film transistor is electrically connected to the first doped region and a region in which the second electrode of the thin-film transistor is electrically connected to the second doped region overlap the lower gate insulating film.