Granted Patent B2

US 12,541,635 · App. 17/860,225 · Granted Feb 3, 2026

Inventors: Sorang Jeon (Seoul, KR); Sunghoon Jang (Hwaseong-si, KR)

Assignee: Samsung Electronics Co., Ltd.

G06F30/398G06F30/392G06F2119/02

Abstract

Claims (68)

1 . A mask layout optical proximity correction (OPC) method comprising:

determining a target pattern to be formed on a substrate;

simulating a photomask layout based on the target pattern;

applying a bias to the simulated photomask layout such that the photomask layout is corrected into a first modeling layout;

selecting at least one control parameter, the at least one control parameter obtained through modeling using a layout of a split mask, the split mask including a plurality of actual patterns each representing a change to a physical component of a test pattern;

checking whether there is a mask rule check (MRC) violation based on the first modeling layout;

deforming the first modeling layout into a second modeling layout based on the selected at least one control parameter; and

checking whether there is the MRC violation, based on the second modeling layout,

wherein when the MRC violation checking is executed based on the first modeling layout and there is the MRC violation, the deforming the first modeling layout into the second modeling layout corrects the MRC violation such that when the MRC violation checking is executed based on the second modeling layout, there is no MRC violation.

2 . The mask layout OPC method according to claim 1 , further comprising:

manufacturing the split mask.

3 . The mask layout OPC method according to claim 2 , further comprising:

measuring at least one mask pattern in the split mask; and

extracting at least one layout contour of the split mask.

4 . The mask layout OPC method according to claim 3 , further comprising:

modeling the layout of the split mask based on the extracted at least one layout contour; and

calibrating the modeling through which the at least one control parameter is obtained using both a correctly-manufactured portion and an incorrectly-manufactured portion of the modeled layout of the split mask.

5 . The mask layout OPC method according to claim 4 , wherein the at least one control parameter includes at least one of a value obtained through the calibration or a value obtained through the modeling based on the at least one layout contour.

6 . The mask layout OPC method according to claim 5 , wherein the manufacturing of the split mask is executed prior to the determining the target pattern.

7 . The mask layout OPC method according to claim 5 , wherein the at least one control parameter is based on at least one of a density kernel or a Gaussian kernel.

8 . The mask layout OPC method according to claim 2 , further comprising:

comparing a number of repetitions of the simulating, the correcting, and the checking for the MRC violation with a reference number to determine whether the simulating, the correcting and the MRC violation checking should be repeated.

9 . The mask layout OPC method according to claim 8 , wherein, when the simulating, the correcting, and the MRC violation checking are repeated, the manufacturing the split mask is not repeated.

10 . The mask layout OPC method according to claim 1 , wherein the deforming the first modeling layout includes removing a region of the target pattern when there is the MRC violation in the first modeling layout.

11 . The mask layout OPC method according to claim 1 , further comprising:

calculating an edge placement error (EPE) from the photomask layout based on a simulated contour pattern, after the MRC violation checking; and

determining whether the EPE is not more than a tolerance threshold.

12 . A mask layout optical proximity correction (OPC) method comprising:

determining a target pattern to be formed on a substrate;

simulating a photomask layout based on the target pattern;

applying a bias to the simulated photomask layout such that the photomask layout is corrected into a first modeling layout;

calculating an edge placement error (EPE) from the photomask layout based on a simulated contour pattern, after the correction into the first modeling layout;

determining whether the EPE is not more than a tolerance threshold;

selecting at least one control parameter after the determining whether the EPE is not more than the tolerance threshold, the at least one control parameter obtained through modeling using a layout of a split mask, and the split mask including a plurality of actual patterns each representing a change to a physical component of a test pattern;

checking whether there is a mask rule check (MRC) violation based on the first modeling layout;

deforming the first modeling layout into a second modeling layout based on the selected at least one control parameter; and

checking whether there is the MRC violation, based on the second modeling layout,

wherein when the MRC violation checking is executed based on the first modeling layout and there is the MRC violation, the deforming the first modeling layout into the second modeling layout corrects the MRC violation such that when the MRC violation checking is executed based on the second modeling layout, there is no MRC violation.

13 . The mask layout OPC method according to claim 12 , wherein the at least one control parameter is created prior to the determining the target pattern.

14 . The mask layout OPC method according to claim 13 , wherein the creation of the at least one control parameter includes

manufacturing the split mask,

measuring at least one mask pattern in the split mask,

extracting at least one layout contour of the split mask,

modeling the layout of the split mask based on the extracted at least one layout contour,

calibrating the modeling through which the at least one control parameter is obtained using both a correctly-manufactured portion and an incorrectly-manufactured portion of the modeled layout of the split mask, and

deriving a relation between a value obtained through the calibration and a value obtained through the modeling based on the contour.

15 . The mask layout OPC method according to claim 14 , wherein the manufacturing the split mask, the measuring the at least one mask pattern in the split mask, and the extracting the at least one layout contour of the split mask are executed prior to the determining the target pattern.

16 . A mask layout optical proximity correction (OPC) method comprising:

preparing a model of a split mask by

manufacturing the split mask such that the split mask includes a plurality of actual patterns each representing a change to a physical component of a test pattern,

measuring at least one mask pattern in the split mask,

extracting at least one layout contour of the split mask,

modeling a layout of the split mask based on the extracted at least one layout contour,

calibrating the model of the split mask using both a correctly-manufactured portion and an incorrectly-manufactured portion of the modeled layout of the split mask,

deriving a relation between a value obtained through the calibration and a value obtained through the modeling based on the at least one layout contour, and

obtaining control parameters from the derived relation;

determining a target pattern to be formed on a substrate;

simulating a photomask layout based on the target pattern;

applying a bias to the simulated photomask layout such that the photomask layout is corrected into a first modeling layout;

selecting at least one of the control parameters;

checking whether there is a mask rule check (MRC) violation based on the first modeling layout;

deforming the first modeling layout into a second modeling layout based on the at least one selected control parameter; and

checking whether there is the MRC violation, based on the second modeling layout,

wherein when the MRC violation checking is executed based on the first modeling layout and there is the MRC violation, the deforming the first modeling layout into the second modeling layout corrects the MRC violation such that when the MRC violation checking is executed based on the second modeling layout, there is no MRC violation.

17 . The mask layout OPC method according to claim 16 , wherein the control parameters are created prior to the determining the target pattern.

18 . The mask layout OPC method according to claim 16 , further comprising:

comparing a number of repetitions of the simulating, the correcting, and the checking for the MRC violation with a reference number to determine whether the simulating, the correcting, and the MRC violation checking should be repeated,

wherein, when the simulating, the correcting and the MRC violation checking are repeated, the obtaining the control parameters is not repeated.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (19)