Methods for removing deposits on the surface of a chamber component
Described herein is a method for removing deposits off a surface of a chamber component. The method includes receiving a chamber component, and fixing the chamber component in a fixture. A slurry is then applied to a surface of the chamber component, where the slurry has a pH of about 5 to about 9. The surface is then polished using a polish pad and the slurry. The surface roughness of the surface after polishing is within about 10% of the surface roughness before polishing, and wherein deposits on the surface of the chamber component are removed by polishing. An alternative method for removing deposits is also presented, wherein the chamber component is heated to a temperature of about 500° C. to about 1500° C.
1. A method comprising:
receiving a chamber component;
fixing the chamber component in a fixture;
applying a slurry to a surface of the chamber component, the slurry having a pH of about 7 to about 9, wherein the slurry comprises nanoparticles having a particle size of from about 30 nanometers to about 400 nanometers; and
cleaning the surface of the chamber component using a polish pad and the slurry without reducing a thickness of the chamber component,
wherein a surface roughness of the surface after cleaning is within about 10% of the surface roughness before cleaning, and wherein deposits on the surface of the chamber component are removed by the cleaning.
2. The method of claim 1 , wherein the chamber component comprises a metal fluoride deposit on the chamber component prior to the cleaning, and wherein the metal fluoride deposit is removed by the cleaning.
3. The method of claim 2 , wherein the metal fluoride deposit comprises a yttrium oxy-fluoride deposit.
4. The method of claim 1 , wherein the slurry has a concentration of about 20 wt % to about 50 wt % of the nanoparticles.
5. The method of claim 1 , wherein the nanoparticles are suspended in a solvent.
6. The method of claim 5 , wherein the solvent is water.
7. The method of claim 1 , wherein the cleaning is performed using a chemical mechanical polishing (CMP) process.
8. The method of claim 1 , wherein the chamber component is selected from a group consisting of a chamber lid, a shower head, a nozzle, a substrate support assembly, an electrostatic chuck, a coupon and a gas distribution plate.
9. The method of claim 1 , wherein the slurry has a pH of about 7.
10. The method of claim 1 , wherein the surface is substantially flat.
11. The method of claim 1 , wherein the cleaning occurs for about 3 hours to about 10 hours.