Low-temperature/beol-compatible highly scalable graphene synthesis tool
In one aspect, a highly scalable diffusion-couple apparatus includes a transfer chamber configured to load a wafer into a process chamber. The process chamber is configured to receive the wafer substrate from the transfer chamber. The process chamber comprises a chamber for growth of a diffusion material on the wafer. A heatable bottom disk includes a first heating mechanism. The heatable bottom disk is fixed and heatable to a specified temperature. The wafer is placed on the heatable bottom disk. A heatable top disk comprising a second heating mechanism. The heatable top disk is configured to move up and down along an x axis and an x prime axis to apply a mechanical pressure to the wafer on the heatable bottom disk. While the heatable top disk applies the mechanical pressure, a chamber pressure is maintained at a specified low value. The first heating mechanism and the second heating mechanism can be independently tuned to any value in the working range.
1. A method for migration of a deposition material across a diffusion couple deposited on a substrate to a substrate surface comprising:
using a reactor system to facilitate the migration of one or more diffusion materials across a diffusion couple to a substrate by;
applying a specified pressure to facilitate the migration of the one or more diffusion materials across the diffusion couple to the substrate, and
applying a temperature to facilitate the migration of the one or more diffusion materials across a diffusion couple to the substrate.
2. The method of claim 1 ,
wherein the reactor system uses a mechanical means to apply the pressure to facilitate the migration of the one or more diffusion materials across the diffusion couple to the substrate, and
wherein the mechanical means comprise a pneumatic mechanical means, a hydraulic mechanical means, or a piezoelectric array.
3. The method of claim 1 ,
wherein the reactor system uses a flexible pressurized membrane to apply the pressure to facilitate the migration of the materials across a diffusion couple to the substrate.
4. The method of claim 1 ,
wherein the step of applying a temperature to facilitate the migration of the one or more diffusion materials across a diffusion couple to the substrate comprising:
using a resistive heating through a direct contact or an indirect contact to apply the temperature to facilitate the migration of the one or more diffusion materials across the diffusion couple to the substrate.
5. The method of claim 1 ,
wherein the step of applying a temperature to facilitate the migration of the one or more diffusion materials across a diffusion couple to the substrate comprising:
using a heated gas to apply the temperature to facilitate the migration of the one or more diffusion materials across the diffusion couple to the substrate.
6. The method of claim 1 ,
wherein the step of applying a temperature to facilitate the migration of the one or more diffusion materials across a diffusion couple to the substrate comprising:
using a radiative heating to apply the temperature to facilitate the migration of the one or more diffusion materials across the diffusion couple to the substrate.
7. The method of claim 1 further comprising:
wherein the step of applying a temperature to facilitate the migration of the one or more diffusion materials across a diffusion couple to the substrate comprises:
using an inductive heating of a carrier on which the substrate sits or a top movable disk to facilitate the migration of the one or more diffusion materials across a diffusion couple to the substrate;
using an approximate compliance in one or more mechanisms for a direct pressure application to ensure a uniform pressure on the substrate and to prevent a breakage of the substrate;
using a compliant high thermal conductivity material at the pressure application surfaces to ensure uniform application of pressure without breakage of the substrate;
using the current drawn by the actuator used for application of pressure to the substrate as a measure of the applied pressure;
using a pressure transducer to measure the pressure applied to the substrate;
using a plurality of flexures and leaf springs configured as strain gages and embedded in the pedestals to measure the pressure applied to the substrate; and
using a plurality of reactor configurations capable of processing multiple substrates for batch processing of the substrates.