IP Library › Granted Patent US 11,641,529
Granted Patent B2
US 11,641,529 · App. 17/863,279 · Granted May 2, 2023

Imaging element

Inventors: Toshiyuki Nishihara (Kanagawa, JP); Tomohiro Takahashi (Tokyo, JP); Masao Matsumura (Kanagawa, JP); Tsutomu Imoto (Kanagawa, JP)
Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
H04N5/3575H01L27/146H01L27/14634H04N5/357H04N5/369H04N5/374H04N5/378H04N5/379H04N5/3745H04N5/37452
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Quick Facts
Patent No.
US 11,641,529
App. No.
17/863,279
Granted
May 2, 2023
Kind
B2
Abstract

The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

Claims (47)

1. A light detecting device, comprising:

a first substrate that includes:

a photoelectric conversion element; and

a first amplification element that amplifies a signal from the photoelectric conversion element; and

a second substrate laminated to the first substrate, wherein the second substrate includes:

a detection circuit that performs analog-to-digital conversion based on the signal from the photoelectric conversion element,

wherein, a second amplification element amplifies an output from the first amplification element, and

wherein, a coupling capacitor is between the first and second amplification elements.

2. The light detecting device according to claim 1 , wherein

an input parasitic capacitance of the second amplification element is larger than an input parasitic capacitance of the first amplification element.

3. The light detecting device according to claim 1 , wherein

charge transfer and resetting of the photoelectric conversion element are performed in a same period.

4. The light detecting device according to claim 1 , further comprising:

a detection unit that detects a signal from the second amplification element, wherein the detection unit performs sampling of each of a reset signal and an accumulated signal, including processing of correlated double sampling.

5. The light detecting device according to claim 4 , wherein the detection unit considers a predetermined row as a processing target and performs sampling of a reset signal from the predetermined row, and sampling of accumulated signals from all rows including the predetermined row.

6. The light detecting device according to claim 1 , further comprising:

a detection unit that detects a signal from the second amplification element, wherein the detection unit does not perform sampling of a reset signal and only performs sampling of an accumulated signal, including processing of correlated double sampling.

7. The light detecting device according to claim 6 , wherein the detection unit that is formed in a third layer, and wherein the first substrate, the second substrate, and the third layer are stacked.

8. The light detecting device according to claim 1 , further comprising:

a first reset element that selectively resets the first amplification element; and

a second reset element that selectively resets the second amplification element.

9. The light detecting device according to claim 8 , wherein an output signal from the second amplification element and a reference signal are input to a differential amplifier, and wherein an output from the differential amplifier is supplied to the second reset element.

10. The light detecting device according to claim 9 , wherein the differential amplifier includes the second reset element and a current mirror circuit.

11. The light detecting device according to claim 9 , wherein the differential amplifier includes the second reset element and a current mirror circuit.

12. The light detecting device according to claim 1 , further comprising:

a transfer transistor, wherein the first amplification element is a first amplification transistor, and wherein the transfer transistor selectively connects the photoelectric conversion element to a gate of the first amplification element.

13. The light detecting device according to claim 1 , wherein the coupling capacitor is a first capacitor, the light detecting device further comprising:

a second capacitor, wherein a first node of the second capacitor is connected to a node of the first capacitor.

14. The light detecting device according to claim 1 , wherein a first node of the coupling capacitor is selectively connected to ground by a load transistor.

15. The light detecting device according to claim 1 , further comprising:

a transfer transistor, wherein the first amplification element is selectively connected to the photoelectric conversion element via the transfer transistor.

16. The light detecting device according to claim 15 , further comprising:

a floating diffusion, wherein the floating diffusion is connected to the transfer transistor and the first amplification element.

17. The light detecting device according to claim 16 , further comprising:

a first reset transistor, wherein the floating diffusion is selectively connected to a reset voltage by the first reset transistor.

18. The light detecting device according to claim 1 , further comprising:

a floating diffusion, wherein a gate of the first amplification element is connected to the floating diffusion.

19. A imaging element, comprising:

a first substrate that includes:

a photoelectric conversion element; and

a first amplification element that amplifies a signal from the photoelectric conversion element; and

a second substrate laminated to the first substrate, wherein the second substrate includes:

a detection circuit that performs analog-to-digital conversion based on the signal from the photoelectric conversion element,

wherein, a second amplification element amplifies an output from the first amplification element, and

wherein a coupling capacitor is between the first and second amplification elements.

20. The imaging element according to claim 19 , wherein

an input parasitic capacitance of the second amplification element is larger than an input parasitic capacitance of the first amplification element.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 12, 2022
From: NISHIHARA, TOSHIYUKI; TAKAHASHI, TOMOHIRO; MATSUMURA, MASAO; IMOTO, TSUTOMU
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 060489/0377 →
Priority Claims (1)
JP JP2016-147994 · Jul 28, 2016 · national
Continuity (3)
Continuation 16996745 · Aug 18, 2020
Continuation 16318650
Related Publication 20220368841A1 · Nov 17, 2022
Cited By (1)
US 12,348,883