Ceramic electronic device including dielectric layer containing perovskite compound with yttria-stabilized zirconia, and manufacturing method of same

1. A ceramic electronic device comprising:

a dielectric layer and an internal electrode layer that are alternately stacked,

wherein the dielectric layer contains yttria-stabilized zirconia and (Ca x1 Ba x2 Sr 1-x1-x2 )(Ti y Zr 1-y )O 3 (0.6≤x1≤0.9, 0≤x2≤0.1, 0≤y≤0.1) as a main component,

wherein, in the dielectric layer, a concentration of the yttria-stabilized zirconia when a total amount of Ti and Zr is 100 mol % is 0.5 mol % or more and 5.0 mol % or less, and

wherein an area ratio of grains of the yttria-stabilized zirconia is 1% or more and 15% or less in a cross section of the dielectric layer.

2. The ceramic electronic device as claimed in claim 1 ,

wherein the dielectric layer includes a manganese compound, and

wherein, in the dielectric layer, a concentration of the manganese compound is 0.2 mol % or more and 5.0 mol % or less in a shape of MnO, when the total amount of Ti and Zr is 100 mol %.

3. The ceramic electronic device as claimed in claim 1 ,

wherein the dielectric layer includes a silicon compound, and

wherein, in the dielectric layer, a concentration of the silicon compound is 0.5 mol % or more and 5.0 mol % or less in a shape of SiO 2 , when the total amount of Ti and Zr is 100 mol %.

4. The ceramic electronic device as claimed in claim 1 ,

wherein the dielectric layer includes a boron compound, and

wherein, in the dielectric layer, a concentration of the boron compound is 0.2 mol % or more and 1.0 mol % or less in a shape of (B 2 O 3 )/2, when the total amount of Ti and Zr is 100 mol %.

5. The ceramic electronic device as claimed in claim 1 ,

wherein the dielectric layer includes a plurality of voids, and

wherein a total area of the plurality of voids is smaller than a total area of the grains of the yttria-stabilized zirconia, in a cross section of the dielectric layer.

6. The ceramic electronic device as claimed in claim 5 , wherein each of longitudinal diameters of the plurality of voids is 0.1 μm or more and 0.6 μm or less.

7. The ceramic electronic device as claimed in claim 5 , wherein at least one of the plurality of voids and at least one of the grains are in contact with each other.

8. The ceramic electronic device as claimed in claim 1 , wherein a thickness of the dielectric layer is 2 μm or less.

9. The ceramic electronic device as claimed in claim 1 , wherein a temperature coefficient obtained by a difference of an electrostatic capacity of the dielectric layer at 25 degrees C. and an electrostatic capacity of the dielectric layer at 125 degrees C. is −300 ppm/degrees C. or more and 300 ppm/degrees C. or less.

10. A manufacturing method of a ceramic electronic device comprising:

forming a multilayer structure in which a dielectric green sheet including ceramic powders and a metal conductive paste for forming an internal electrode layer are alternately stacked; and

firing the multilayer structure,

wherein the ceramic powders include yttria-stabilized zirconia and Ca x1 Ba x2 Sr 1-x1-x2 )(Ti y Zr 1-y )O 3 (0.63≤x1≤0.9, 0≤x2≤0.1, 0≤y≤0.1) as a main component, and

wherein, in the ceramic powders, a concentration of the yttria-stabilized zirconia when a total amount of Ti and Zr is 100 mol % is 0.5 mol % or more and 5.0 mol % or less, and

wherein, after the firing, in a dielectric layer formed from the dielectric green sheet, an area ratio of grains of the yttria-stabilized zirconia is 1% or more and 15% or less in a cross section of the dielectric layer.

11. The manufacturing method as claimed in claim 10 ,

wherein the ceramic powders include a boron nitride,

wherein a concentration of the boron nitride is 0.2 mol % or more and 1.0 mol % or less in a shape of (B 2 O 3 )/2, when the total amount of Ti and Zr is 100 mol % in the ceramic powders, and

the boron nitride has a specific surface area of 100 m 2 /g or more and 300 m 2 /g or less.