Integrated coherent optical transceiver

1. A silicon photonics substrate for a transceiver, the silicon photonics substrate comprising:

a substrate member comprised of a first silicon material; and

heterogeneously formed on the substrate member,

coherent receiver circuitry comprised of a second silicon material different from the first silicon material, the coherent receiver circuitry being configured to receive signals having a modulation format from among two or more possible modulation formats and further configured to

receive a coherent input signal,

generate first and second oscillator signals based on light input from a laser diode, and

detect a transverse electric (TE) mode signal and a transverse magnetic (TM) mode signal in the coherent input signal based on the first and second oscillator signals, and

coherent transmitter circuitry comprised of the second or a third silicon material, the coherent transmitter circuitry being configured to

transmit signals having a modulation format from among the two or more possible modulation formats, and

modulate the light input from the laser diode in either one of a TE mode and a TM mode to generate a coherent output signal to be output from the transceiver.

2. The silicon photonics substrate of claim 1 , further comprising a first splitter formed on the substrate member and configured to split the light input received from the laser diode into a first light input and a second light input, wherein the coherent receiver circuitry receives the first light input and the coherent transmitter circuitry receives the second light input.

3. The silicon photonics substrate of claim 1 , further comprising a transimpedance amplifier formed on the substrate member, the transimpedance amplifier being configured to convert current corresponding to either of the TE mode signal and the TM mode signal to a digital signal to be output from the transceiver.

4. The silicon photonics substrate of claim 3 , wherein the transimpedance amplifier is comprised of at least one of silicon germanium, indium phosphide, and gallium arsenide.

5. The silicon photonics substrate of claim 3 , wherein the transimpedance amplifier is flip-chip mounted on the substrate member.

6. The silicon photonics substrate of claim 3 , further comprising a driver formed on the substrate member, the driver configured to modulate the light input from the laser diode to the coherent transmitter circuitry.

7. The silicon photonics substrate of claim 6 , wherein the driver is flip-chip mounted on the substrate member.

8. The silicon photonics substrate of claim 6 , wherein the driver is integrated into the substrate member.

9. The silicon photonics substrate of claim 6 , wherein the driver is comprised of one of silicon and silicon nitride.

10. The silicon photonics substrate of claim 6 , wherein the transimpedance amplifier and the driver are integrated into a single chip mounted on the substrate member.

11. The silicon photonics substrate of claim 1 , further comprising the laser diode, the laser diode being mounted on the substrate member.

12. The silicon photonics substrate of claim 1 , further comprising a semiconductor optical amplifier configured to receive and amplify the coherent output signal as output by the coherent transmitter circuitry.

13. The silicon photonics substrate of claim 9 , the semiconductor optical amplifier being flip-chip mounted on the substrate member.