IP Library Granted Patent US 12,418,345
Granted Patent B2
US 12,418,345 · App. 18/502,449 · Granted Sep 16, 2025

Integrated coherent optical transceiver

Inventor: Radhakrishnan L. Nagarajan (Santa Clara, CA)
Assignee: MARVELL ASIA PTE LTD
H04B10/40G02B6/12004G02B6/126G02B6/4226G02B6/4246G02B6/428H01S3/13H01S5/0085H01S5/0234H01S5/02375H04J14/02G02B2006/12061G02B2006/12097G02B2006/12121G02B2006/12123G02B2006/12142G02B6/1228H01S5/0687H04B10/29H04B10/2914H04B10/50H04B10/564H04J14/06
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Quick Facts
Patent No.
US 12,418,345
App. No.
18/502,449
Granted
Sep 16, 2025
Kind
B2
Abstract

An integrated circuit includes a silicon photonics substrate and includes a transimpedance amplifier (TIA) chip and a driver chip arranged on the silicon photonics substrate. The silicon photonics substrate includes a silicon-based material, includes electrical connections, and includes silicon photonics components configured to receive and transmit optical signals. The TIA chip includes a silicon-germanium material that is different from the silicon-based material, is connected via the electrical connections to at least one of the silicon photonics components configured to receive an optical signal, and is configured to process a received optical signal and to output a processed signal to a digital signal processor. The driver chip includes CMOS material that is different from the silicon-germanium material and the silicon-based material, and is connected via the electrical connections to drive at least one of the silicon photonics components configured to generate an optical signal for transmission.

Claims (19)

1. An integrated circuit comprising:

a silicon photonics substrate comprising a silicon-based material and comprising silicon photonics components formed in the silicon photonics substrate, the silicon photonics components configured to receive and transmit optical signals, the silicon photonics substrate comprising electrical connections;

a transimpedance amplifier chip arranged on the silicon photonics substrate, the transimpedance amplifier chip comprising a silicon-germanium material that is different from the silicon-based material of the silicon photonics substrate, the transimpedance amplifier chip connected via the electrical connections in the silicon photonics substrate to at least one of the silicon photonics components configured to receive an optical signal, the transimpedance amplifier chip configured to process a received optical signal and output a processed signal to a digital signal processor; and

a driver chip arranged on the silicon photonics substrate, the driver chip comprising CMOS material that is different from the silicon-germanium material of the transimpedance amplifier chip and from the silicon-based material of the silicon photonics substrate, the driver chip connected via the electrical connections in the silicon photonics substrate to drive at least one of the silicon photonics components configured to generate a coherent optical signal for transmission;

a laser device arranged on the silicon photonics substrate wherein the laser device is configured to output light;

a splitter configured to split the light from the laser device into a first portion and a second portion;

a polarization beam splitter rotator configured to split TE-mode and TM-mode of the received optical signal and rotate the TM-mode to TE-mode;

a receiver configured to receive outputs of the polarization beam splitter rotator, receive the first portion of the light from the laser device, and detect TE-mode and TM-mode signals of the received optical signal, wherein the detected TE-mode and TM-mode signals of the received optical signal are output to the transimpedance amplifier chip; and

a transmitter configured to receive the second portion of the light from the laser device and to generate the coherent optical signal for transmission.

2. The integrated circuit of claim 1 wherein the electrical connections in the silicon photonics substrate are configured to connect the transimpedance amplifier chip and the driver chip to a printed circuit board.

3. The integrated circuit of claim 1 wherein the silicon photonics substrate comprises a plurality of waveguides comprising silicon related materials formed on a silicon-on-insulator substrate, and wherein the waveguides are configured to interconnect the silicon photonics components formed in the silicon photonics substrate.

4. The integrated circuit of claim 1 wherein the transmitter comprises:

a modulator configured to receive the second portion of the light from the laser device, to modulate the second portion of the light, and to output modulated signals;

a polarization beam splitter combiner configured to combine the modulated signals; and

a polarization independent semiconductor optical amplifier connected to the polarization beam splitter combiner and configured to output the coherent optical signal for transmission.

5. The integrated circuit of claim 4 wherein the driver chip is configured to provide control signals to the modulator to modulate the second portion of the light received from the laser device.

6. The integrated circuit of claim 1 wherein the laser device comprises a laser diode, a tunable filter, and couplers integrated into the silicon photonics substrate.

7. The integrated circuit of claim 6 wherein:

the couplers are configured to couple the light from the laser device with a wavelength tuned by the tunable filter to the transmitter and the receiver.

Continuity (4)
Continuation 17867567 · Jul 18, 2022
Continuation 16928845 · Jul 14, 2020
Continuation 16357095 · Mar 18, 2019
Related Publication 20240089002A1 · Mar 14, 2024
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