Semiconductor device and method for fabricating the same
A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer adjacent to the gate structure, performing a plasma doping process to form a doped layer in the ILD layer and a source/drain region adjacent to the gate structure, forming a conductive layer in the contact hole, planarizing the conductive layer to form a contact plug, removing the doped layer to form an air gap adjacent to the contact plug, and then forming a stop layer on the ILD layer and the contact plug.
1. A semiconductor device, comprising:
a gate structure on a substrate;
a source/drain region adjacent to the gate structure;
an interlayer dielectric (ILD) layer around the gate structure;
a contact plug in the ILD layer and adjacent to the gate structure;
an air gap around the contact plug;
a stop layer on the ILD layer and the contact plug; and
a metal interconnection on and overlapping the contact plug and the air gap.
2. The semiconductor device of claim 1 , further comprising:
a lightly doped drain (LDD) adjacent to the gate structure; and
a spacer adjacent to the gate structure.
3. The semiconductor device of claim 1 , wherein the air gap exposes the source/drain region, the ILD layer, and the contact plug.
4. The semiconductor device of claim 1 , wherein top surfaces of the air gap and the contact plug are coplanar.
5. The semiconductor device of claim 1 , wherein bottom surfaces of the air gap and the contact plug are coplanar.