Semiconductor light emitting devices and method of manufacturing the same
Disclosed is a semiconductor light emitting device including: A semiconductor light emitting device comprising: a semiconductor light emitting device chip including a plurality of semiconductor layers, and electrodes electrically connected to the plurality of semiconductor layers, the plurality of semiconductor layers including an active layer adapted to generate light by recombination of electrons and holes; an encapsulating member of a lens shape made of a light-transmitting thermoplastic resin having at least 90% transmissivity for light of a wavelength band ranging from 100 nm to 400 nm, for surrounding the semiconductor light emitting device chip; and an external substrate including conductive layers electrically connected to the electrodes of the semiconductor light emitting device chip. The encapsulating member is formed in a way that all faces of the encapsulating member are exposed to outside, except for a portion of the lower face thereof in contact with the external substrate.
1. A method of manufacturing a semiconductor light emitting device comprising: a semiconductor light emitting device chip including a plurality of semiconductor layers, and electrodes electrically connected to the plurality of semiconductor layers, the plurality of semiconductor layers including an active layer adapted to generate light having a wavelength in a band ranging from 200 nm to 280 nm by recombination of electrons and holes; a single encapsulating member of a lens shape for surrounding the semiconductor light emitting device chip; and a single external substrate including a base which has an upper face and a lower face, conductive layers formed on the upper face of the base and electrically connected to the electrodes of the semiconductor light emitting device chip, a barrier located on the upper face of the base and positioned at a predefined distance from the conductive layers and having a top surface, and a reflective layer formed on the upper face of the base and located at a predefined distance from the semiconductor light emitting device chip and from the barrier; wherein the electrodes of the semiconductor light emitting device chip are arranged to face the conductive layers of the single external substrate; wherein the barrier positioned at the predefined distance from the conductive layers has a closed loop shape; wherein a top surface of the closed loop shaped barrier is covered completely or partially with the single encapsulating member of the lens shape surrounding the semiconductor light emitting device chip; wherein the barrier is positioned outside the conductive layers with respect to the semiconductor light emitting device chip and the reflective layer is positioned outside the barrier with respect to the conductive layers; and wherein the barrier is a stopper wall for keeping the encapsulating member from running over the barrier in a configuration where the reflective layer is not covered by the encapsulating member, the method comprising:
placing a solid preliminary encapsulating member over the semiconductor light emitting device chip, wherein the solid preliminary encapsulating member is obtained by curing a liquid-phase light-transmitting thermoplastic resin having at least 80% transmissivity for light of a wavelength band ranging from 200 nm to 280 nm; and
thermally curing the solid preliminary encapsulating member to form the single encapsulating member using the barrier as a stopper wall,
wherein the reflective layer reflects the light from the semiconductor light emitting device chip and has no electrical connection with the semiconductor light emitting device chip.
2. The method of manufacturing the semiconductor light emitting device according to claim 1 , wherein the barrier comprises Au or Al, and the conductive layers comprise Au.
3. The method of manufacturing the semiconductor light emitting device according to claim 1 , wherein the liquid-phase light-transmitting thermoplastic resin undergoes a reduction in volume of at least 90% during a curing process.
4. The method of manufacturing the semiconductor light emitting device according to claim 1 , wherein thermally curing the solid preliminary encapsulating member to form the single encapsulating member involves forming the single encapsulating member in a way that an outer lateral face of the barrier located between the reflective layer and the barrier is not covered with the single encapsulating member.