Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface

1. A method for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface, the method comprising:

forming a plasma generated from a hydrogen containing gas;

using a cyclical deposition process selectively forming a passivation film from vapor phase reactants on the first dielectric surface relative to the second metallic surface; and

selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film.

2. The method of claim 1 , wherein the hydrogen containing gas comprises at least one of hydrogen (H 2 ), or ammonia (NH 3 ).

3. The method of claim 1 , wherein selectively forming the passivation film comprises depositing an organic film on the first dielectric surface.

4. The method of claim 3 , wherein selectively vapor depositing an organic film comprises selectively depositing a polymer film on the first dielectric surface.

5. The method of claim 1 , wherein selectively forming the passivation film comprises removing the passivation film on the second metallic surface.

6. The method of claim 5 , wherein the step of removing is performed utilizing an oxygen containing gas or a plasma generated from an oxygen containing gas.

7. The method of claim 5 , wherein the step of removing is performed utilizing a hydrogen based plasma.

8. The method of claim 1 , wherein the first dielectric surface comprises at least one of a silicon oxide, a silicon nitride, a silicon carbide, a silicon oxynitride, a silicon oxycarbide, or mixtures thereof.

9. The method of claim 1 , wherein the cyclical deposition process comprises a molecular layer deposition process.

10. The method of claim 1 , wherein the target film comprises: a metal oxide, a metal nitride, or an elemental metal.

11. The method of claim 1 , further comprises etching target film disposed on the passivation film post selective deposition of the target film.

12. A method for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface, the method comprising:

forming a plasma generated from a hydrogen containing gas;

selectively forming a passivation film from vapor phase reactants on the first dielectric surface relative to the second metallic surface; and

selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film,

wherein selectively depositing the target film comprises a cyclical deposition process.

13. The method of claim 12 , wherein the cyclical deposition process comprises performing one or more unit deposition cycles, wherein a unit deposition cycle comprises:

contacting the substrate with a first vapor phase reactant comprising a metal precursor; and

contacting the substrate with a second vapor phase reactant.

14. The method of claim 13 , wherein the metal precursor comprises a cyclopentadienyl based metal precursor.

15. The method of claim 14 , wherein the cyclopentadienyl based metal precursor comprises a metal selected from the group comprising: platinum (Pt), hafnium (Hf), ruthenium (Ru), nickel (Ni), cobalt (Co), zirconium (Zr), rhenium (Re), niobium (Nb), or tantalum (Ta).

16. The method of claim 13 , wherein the second vapor phase reactant comprises: a reducing agent for the selective deposition of an elemental metal, an oxygen precursor for the selective deposition of a metal oxide, or a nitrogen precursor for the selective deposition of a metal nitride.

17. The method of claim 12 , further comprising selectively removing the passivation film disposed over the first dielectric surface without removing the entirety of the target film.

18. A method for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface, the method comprising:

forming a plasma generated from a hydrogen containing gas;

selectively forming a passivation film from vapor phase reactants on the first dielectric surface relative to the second metallic surface;

selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film; and

wherein the passivation film comprises a polymer film.

19. The method of claim 18 , further comprising selectively removing the passivation film disposed over the first dielectric surface.

20. A semiconductor structure formed according to the method of claim 1 .