Bipolar junction transistors including emitter-base and base-collector superlattices
A bipolar junction transistor (BJT) may include a substrate defining a collector region therein. A first superlattice may be on the substrate including a plurality of stacked groups of first layers, with each group of first layers including a first plurality of stacked base semiconductor monolayers defining a first base semiconductor portion, and at least one first non-semiconductor monolayer constrained within a crystal lattice of adjacent first base semiconductor portions. Furthermore, a base may be on the first superlattice, and a second superlattice may be on the base including a second plurality of stacked groups of second layers, with each group of second layers including a plurality of stacked base semiconductor monolayers defining a second base semiconductor portion, and at least one second non-semiconductor monolayer constrained within a crystal lattice of adjacent second base semiconductor portions. An emitter may be on the second superlattice.
1. A bipolar junction transistor (BJT) comprising:
a substrate defining a collector region and a sub-collector region below the collector region;
a superlattice on the substrate comprising a plurality of stacked groups of first layers, each group of the first layers comprising a first plurality of stacked base semiconductor monolayers defining a first base semiconductor portion, and at least one first non-semiconductor monolayer constrained within a crystal lattice of adjacent first base semiconductor portions;
a base on the superlattice;
an emitter on the base; and
another superlattice in the substrate between the sub-collector region and the collector region.
2. The BJT of claim 1 further comprising an emitter contact on an upper surface of the emitter, and a base contact on at least a portion of the base.
3. The BJT of claim 1 wherein the base semiconductor monolayers comprise silicon monolayers.
4. The BJT of claim 1 wherein the at least one non-semiconductor monolayer comprises oxygen.
5. A bipolar junction transistor (BJT) comprising:
a substrate defining a collector region therein and a sub-collector region below the collector region;
a base on the substrate over the collector region;
a superlattice on the base comprising a plurality of stacked groups of layers, each group of the layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
an emitter on the superlattice; and
another superlattice in the substrate between the sub-collector region and the collector region.
6. The BJT of claim 5 further comprising an emitter contact on an upper surface of the emitter, and a base contact on at least a portion of the base.
7. The BJT of claim 5 wherein the base semiconductor monolayers comprise silicon monolayers.
8. The BJT of claim 5 wherein the at least one non-semiconductor monolayer comprises oxygen.