Method of reducing undesired light influence in extreme ultraviolet exposure

1. A control system for generating a layout pattern on a photoresist material, comprising:

a main controller; and

an analyzer module coupled to the main controller, wherein the analyzer module is configured to receive a layout pattern and information of the photoresist material, wherein the layout pattern is produced by radiation from an extreme ultraviolet (EUV) radiation source in the photoresist material on a wafer, and wherein the analyzer module is configured to:

select a wavelength of an out-of-band deep ultraviolet (DUV) radiation of the EUV radiation source;

determine a first thickness of a top layer based on the selected wavelength, the first thickness of the top layer is configured to make the top layer opaque for the selected wavelength of the DUV radiation and to make the top layer transparent for EUV radiation;

wherein the main controller is configured to:

control the disposing a photoresist layer of a photoresist material on a semiconductor substrate;

control the disposing the top layer having the first thickness over of the photoresist layer; and

control the irradiating the photoresist layer with radiation generated from the EUV radiation source, wherein the radiation is configured to pass through the top layer to expose the photoresist layer.

2. The control system of claim 1 , further comprising:

a photoresist dispense controller coupled to the main controller; and a stage controller coupled to the main controller and configured to rotate the semiconductor substrate on the stage,

wherein the photoresist dispense controller and the stage controller are configured to dispose the photoresist layer with a uniform thickness on the semiconductor substrate.

3. The control system of claim 2 , further comprising:

a layer dispose controller coupled to the main controller;

and wherein the layer dispose controller is configured to dispose the top layer with the first thickness on top of the photoresist layer.

4. The control system of claim 1 , further comprising:

an EUV exposure controller coupled to the main controller;

and wherein the EUV exposure controller is configured to irradiate the photoresist layer with radiation generated from the EUV radiation source.

5. The control system of claim 1 , further comprising:

a bake controller coupled to the main controller;

and wherein the bake controller is configured to heat the photoresist layer in a post-application baking operation prior to disposing the top layer over of the photoresist layer.

6. The control system of claim 1 , wherein the selected wavelength of the out-of-band DUV radiation of the EUV radiation source is a wavelength from a range of 190 nm to 350 nm.

7. A control system for generating a layout pattern on a photoresist layer, comprising:

a main controller, wherein the main controller is configured to receive a layout pattern wherein the layout pattern is produced by radiation from an extreme ultraviolet (EUVA radiation source in the photoresist layer on a semiconductor substrate, and the main controller is configured to:

select a wavelength of an out-of-band deep ultraviolet (DUV) radiation of the EUV radiation source;

determine a first thickness of a top layer to be disposed on the photoresist layer based on the selected wavelength, the first thickness of the top layer is configured to make the top layer opaque for the selected wavelength of the DUV radiation and to make the top layer transparent to EUV radiation;

wherein the main controller is configured to:

control disposing the photoresist layer on the semiconductor substrate;

control baking the photoresist layer in a post application bake (PAB) operation;

control disposing the top layer having the first thickness over of the photoresist layer; and

control irradiating the photoresist layer with radiation generated from the EUV radiation source, wherein the radiation is configured to pass through the top layer to expose the photoresist layer.

8. The control system of claim 7 , wherein the top layer comprises a first surface in contact with the photoresist layer and an exposed second surface on top of the first surface, and wherein the radiation is configured to enter the top layer from the exposed second surface, pass through the top first layer, and expose the photoresist layer after exiting the top layer through the first surface.

9. The control system of claim 7 , wherein the EUV radiation has a wavelength between 10 nm and 100 nm and DUV radiation in a wavelength range of 190 nm to 365 nm.

10. The control system of claim 9 , wherein a first wavelength is selected in the wavelength range of 190 nm to 365 nm.

11. The control system of claim 7 , wherein the top layer comprises:

a membrane comprising a poly-silicon layer deposited over a silicon nitride layer, and wherein the membrane is configured to be placed over the photoresist layer.

12. The control system of claim 7 , wherein the main controller is further configured to:

control irradiating the photoresist layer with the radiation from the EUV radiation source that is reflected from a reflective mask; and

control generating a pattern in the photoresist layer after exposing the photoresist layer by the EUV radiation.

13. The control system of claim 7 , wherein the main controller is further configured to:

control disposing one or more other layers transparent to the EUV radiation either:

over the top layer, or

between the top layer and the photoresist layer, wherein one of the one or more other layers is a protective layer.

14. The control system of claim 7 , wherein the main controller is further configured to select the first thickness as a multiple of a rational fraction of the selected wavelength.

15. A control system for generating a layout pattern on a photoresist layer, comprising:

a main controller configured to receive a layout pattern wherein the layout pattern is produced by radiation from an extreme ultraviolet (EUV) radiation source in the photoresist layer on a semiconductor substrate, and the main controller is further configured to:

select a wavelength of an out-of-band deep ultraviolet (DUV) radiation of the EUV radiation source;

determine a first thickness of a top layer to be disposed on the photoresist layer as a multiple of a rational fraction of the selected wavelength, the first thickness of the top layer is configured to make the top layer opaque for the selected wavelength of the DUV radiation and to make the top layer transparent to EUV radiation;

wherein the main controller is also configured to:

control disposing the photoresist layer on the semiconductor substrate; and

control disposing the top layer having the first thickness over of the photoresist layer.

16. The control system of claim 15 , wherein the main controller is further configured to:

control baking the photoresist layer in a post application bake (PAB) operation prior to disposing the top layer.

17. The control system of claim 16 , wherein the main controller is further configured to:

control irradiating the photoresist layer with radiation generated from the EUV radiation source, wherein the radiation is configured to pass through the top layer to expose the photoresist layer.

18. The control system of claim 16 , wherein the main controller is further configured to:

control removing the top layer; and

control applying a developer to the photoresist layer to produce a patterned layer over the semiconductor substrate.

19. The control system of claim 15 , wherein the EUV radiation has a wavelength between 10 nm and 100 nm.

20. The control system of claim 15 , wherein a first out-of-band DUV radiation wavelength is selected in a wavelength range of 190 nm to 365 nm.