Nonlinear on-chip optical devices using AlScN

1. An optical component having nonlinear characteristics, the optical component comprising:

a first substrate defining a refractive index;

a nonlinear layer,

the nonlinear layer disposed on the first substrate,

the nonlinear layer comprising an amount of scandium (Sc), and

the nonlinear layer defining a refractive index that is higher than the refractive

index of the first substrate; and

a dielectric layer defined atop the nonlinear layer, wherein the dielectric layer comprises amorphous silicon.

2. The optical component of claim 1 , wherein the nonlinear layer comprises AIScN.

3. The optical component of claim 1 , wherein the nonlinear layer comprises up to about 40 mol % Sc.

4. The optical component of claim 3 , wherein the nonlinear layer comprises up to about 35% Sc.

5. The optical component of claim 4 , wherein the nonlinear layer comprises up to about 30% Sc.

6. The optical component of claim 5 , wherein the nonlinear layer comprises up to about 20% Sc.

7. The optical component of claim 1 , wherein the nonlinear layer defines a d33 value in the range of from about 0.1 to about 100 pm/V.

8. The optical component of claim 1 , wherein the nonlinear layer defines a d31 value in the range of from about 0.01 to about 100 pm/V.

9. The optical component of claim 1 , wherein the nonlinear layer defines an RMS roughness (Rq) of less than about 3 nm.

10. The optical component of claim 1 , wherein the nonlinear layer defines an average roughness (Ra) of less than about 3 nm.

11. The optical component of claim 1 , wherein the nonlinear layer defines an x-ray diffraction full width at half maximum (XRD FWHM) of up to about 2.5 deg.

12. The optical component of claim 1 , wherein the nonlinear layer defines a refractive index at 1550 nm of from about 2 to about 2.4.

13. The optical component of claim 1 , wherein the nonlinear layer defines a thickness in the range of from about 10 to about 3000 nm.

14. The optical component of claim 1 , wherein the first substrate comprises Si, SiC, SiN, or Al 2 O 3 .

15. The optical component of claim 1 , wherein the dielectric layer defines a refractive index, the refractive index of the dielectric layer being lower than the refractive index of the nonlinear layer.

16. The optical component of claim 1 , wherein the dielectric layer defines (a) a thickness of up to about 200 nm, (b) a width of up to about 2 micrometers, or both (a) and (b).

17. The optical component of claim 1 , wherein the dielectric layer defines a guided mode of any polarization and order within the nonlinear layer, such that light is primarily localized to the dielectric layer laterally and to the dielectric layer and nonlinear material vertically.

18. The optical component of claim 1 , further comprising a buffer surmounting the dielectric layer and surmounting the nonlinear layer.

19. The optical component of claim 1 , further comprising a signal electrode in electrical communication with the nonlinear layer.

20. The optical component of claim 1 , further comprising a ground electrode in electrical communication with the nonlinear layer.

21. The optical component of claim 1 , wherein the nonlinear layer or dielectric layer defines a closed curve.

22. The optical component of claim 1 , wherein the nonlinear layer or dielectric layer defines a linear segment, a Y-branch, a grating coupler, or an edge coupler.

23. The optical component of claim 1 , wherein the component is configured as a frequency converter, a multiple wavelength source, or a modulator.

24. The optical component of claim 1 , wherein the optical component is defined on a single chip.

25. A method, comprising:

operating an optical component according to claim 1 so as to effect a signal from the optical component.

26. A method, comprising

fabricating an optical component according to claim 1 , wherein the nonlinear layer is placed on the first substrate via vapor deposition.