Ceramic component and plasma etching apparatus comprising same
A ceramic component included in a plasma etching apparatus, wherein a surface of the ceramic component may include a base material and a composite material disposed in contact with the base material, wherein a resistivity of the ceramic component may be 10 −1 Ω·cm to 20 Ω·cm, and wherein the base material may include a first boron carbide-based material and the composite material may include at least one selected from the group consisting of a second boron carbide-based material, a carbon-based material, and combinations thereof, is disclosed.
1. A ceramic component comprised in a plasma etching apparatus,
wherein a surface of the ceramic component comprises a base material and a composite material disposed in contact with the base material,
wherein a resistivity of the ceramic component is 10 −1 Ω·cm to 20 Ω·cm, and
wherein the base material comprises a first boron carbide-based material and the composite material comprises at least one selected from the group consisting of a second boron carbide-based material, a carbon-based material, and combinations thereof,
wherein the second boron carbide-based material of the composite material has an I ab /I cd ratio of 1.0 to 1.8, where the I ab /I cd ratio is a ratio of a sum (I ab ) of strengths of peaks near 481 cm −1 (I a ) and strengths of peaks near 534 cm −1 (I b ) to a sum (I cd ) of strengths of peaks near 270 cm −1 (I c ) and strengths of peaks near 320 cm −1 (I d ), in a Raman shift spectrum measured through Raman spectroscopy,
wherein the carbon-based material of the composite material has an I e /I f ratio of 0.2 to 2, where the I e /I f ratio is a ratio of a strength of G band peak (I e ) to a strength of D band peak (I f ), in the Raman shift spectrum.
2. The ceramic component of claim 1 , wherein a size of the composite material is 40 μm or less.
3. The ceramic component of claim 1 , wherein the second boron carbide-based material of the composite material has an I ab /I cd ratio of 1.1 to 2.3, where the I ab /I cd ratio is a ratio of a sum (I ab ) of strengths of peaks near 481 cm −1 (I a ) and strengths of peaks near 534 cm −1 (I b ) to a sum (I cd ) of strengths of peaks near 270 cm −1 (I c ) and strengths of peaks near 320 cm −1 (I d ), in a Raman shift spectrum measured through Raman spectroscopy.
4. The ceramic component of claim 1 , wherein the ceramic component comprises a plurality of pores at the surface or in a section thereof and an average diameter of the plurality of pores is 5 μm or less.
5. The ceramic component of claim 1 , wherein the ceramic component comprises:
a placing part having a first height from a reference plane; and
a main part having a second height from the reference plane,
wherein the placing part comprises an upper surface of the placing part where an etching target is placed, and the main part comprises an upper surface of the main part, which is directly etched by plasma.
6. The ceramic component of claim 5 , wherein a gradient part is further comprised between the placing part and the main part, and the gradient part comprises an upper surface of the gradient part connecting the upper surface of the placing part and the upper surface of the main part.
7. The ceramic component of claim 1 , wherein the ceramic component has a bending strength of 300 MPa or more.
8. The ceramic component of claim 1 , wherein a total amount of the carbon-based material is 0.5 wt % or more based on a total weight of the ceramic component.
9. A ceramic component comprised in a plasma etching apparatus,
wherein a surface of the ceramic component comprises a base material and a composite material disposed in contact with the base material,
wherein a resistivity of the ceramic component is 10 −2 Ω·cm to 10 −1 Ω·cm, and
wherein the base material comprises a first boron carbide-based material and the composite material comprises at least one selected from the group consisting of a second boron carbide-based material, boron oxide, and combinations thereof,
wherein the second boron carbide-based material of the composite has an I ab /I cd ratio of 1 to 1.8, where a ratio of a sum (I ab ) of strengths of peaks near 481 cm −1 (I a ) and strengths of peaks near 534 cm −1 (I b ) to a sum (I cd ) of strengths of peaks near 270 cm −1 (I c ) and strengths of peaks near 320 cm −1 (I d ), in a Raman shift spectrum measured through Raman spectroscopy.
10. The ceramic component of claim 9 , wherein a size of the composite material is 40 μm or less.
11. The ceramic component of claim 9 , wherein the second boron carbide-based material of the composite has an I ab /I cd ratio of 1.1 to 2.3, where a ratio of a sum (I ab ) of strengths of peaks near 481 cm −1 (I a ) and strengths of peaks near 534 cm −1 (I b ) to a sum (I cd ) of strengths of peaks near 270 cm −1 (I c ) and strengths of peaks near 320 cm −1 (I d ), in a Raman shift spectrum measured through Raman spectroscopy.
12. The ceramic component of claim 9 , comprising
a placing part having a first height from a reference plane; and
a main part having a second height from the reference plane,
wherein the placing part comprises an upper surface of the placing part where an etching target is placed, and the main part comprises an upper surface of the main part, which is directly etched by plasma.
13. The ceramic component of claim 9 , wherein the ceramic component has a bending strength of 300 MPa or more.
14. The ceramic component of claim 9 , wherein the amount of the carbon-based material in the ceramic component is 0.5 wt % or more compared to a total weight of the ceramic component.
15. A method of manufacturing a ceramic component comprising:
preparing at least one raw material selected from the group consisting of a first raw material comprising boron carbide, a second raw material comprising boron carbide, boron oxide, and a carbon-based material, and a third raw material comprising boron carbide and a carbon-based material; and
preparing the ceramic component by sintering and shaping machining the at least one raw material,
wherein the preparing the at least one raw material comprises preparing raw material grains by slurrying and granulating the at least one raw material,
wherein the at least one raw material after the slurrying has a zeta potential of +15 mV or more.
16. The method of claim 15 ,
wherein a surface of the ceramic component comprises a base material and a composite material disposed in contact with the base material,
wherein a resistivity of the ceramic component is 10 −1 Ω·cm to 20 Ω·cm, and
wherein the base material comprises a first boron carbide-based material and the composite material comprises at least one selected from the group consisting of a second boron carbide-based material, a carbon-based material, and combinations thereof,
wherein the second boron carbide-based material of the composite material has an I ab /I cd ratio of 1.0 to 1.8, where the I ab /I cd ratio is a ratio of a sum (I ab ) of strengths of peaks near 481 cm −1 (I a ) and strengths of peaks near 534 cm −1 (I b ) to a sum (I cd ) of strengths of peaks near 270 cm −1 (I c ) and strengths of peaks near 320 cm −1 (I d ), in a Raman shift spectrum measured through Raman spectroscopy,
wherein the carbon-based material of the composite material has an I e /I f ratio of 0.2 to 2, where the I e /I f ratio is a ratio of a strength of G band peak (I e ) to a strength of D band peak (I f ), in the Raman shift spectrum.
17. The method of claim 16 , wherein a size of the composite material is 40 μm or less.
18. A plasma etching apparatus comprising the ceramic component of claim 1 .
19. A plasma etching apparatus comprising the ceramic component of claim 9 .