Acoustic wave resonator RF filter circuit and system
An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.835 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.
1. An RF filter system, comprising:
a plurality of bulk acoustic wave resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators, each of the resonators of the plurality of resonators comprising:
a support member including a surface, the support member including a multilayer reflector structure including two pairs of a low impedance material layer and a high impedance material layer when the material layers are compared to each other;
a first electrode including tungsten overlying the multilayer reflector structure;
a piezoelectric film including aluminum scandium nitride overlapping the first electrode and overlying the multilayer reflector structure;
a second electrode including tungsten overlapping the piezoelectric film, overlapping the first electrode, and overlying the multilayer reflector; and
a passivation layer including silicon nitride overlying the second electrode; wherein,
portions of the surface of the support member of at least one resonator of the plurality of bulk acoustic wave resonators define a cavity region and at least a portion of the first electrode of the at least one resonator is located within the cavity region defined by the surface of the support member; and
the circuit response corresponding to the serial configuration and the parallel configuration of the plurality of resonators has a pass band having a bandwidth from 5.170 GHz to 5.835 GHz.
2. The system of claim 1 , the circuit having a circuit topology, wherein the serial configuration of resonators and the parallel shunt configuration of resonators are arranged in a ladder circuit topology having an insertion loss of ≤2.0 dB.
3. The system of claim 2 , further comprising:
at least one resonator of the plurality of bulk acoustic wave resonators including at least one trimmed material layer such that the pass band of the circuit has a bandwidth from 5.170 GHz to 5.835 GHz, the at least one trimmed material layer including at least one of the passivation layer and the second electrode having a thickness sufficient to provide the pass band having a bandwidth from 5.170 GHz to 5.835 GHz.
4. The system of claim 3 , wherein,
the at least one resonator of the plurality of bulk acoustic wave resonators including at least a portion of the first electrode located within the cavity region defined by the surface of the support member, and
the at least one resonator of the plurality of bulk acoustic wave resonators including at least one trimmed material layer,
are the same resonator.
5. The system of claim 4 , further comprising:
a mass loaded structure overlying the second electrode, wherein the passivation layer including silicon nitride overlies the mass loaded structure.
6. The system of claim 5 , further comprising:
at least one resonator of the plurality of bulk acoustic wave resonators including:
an electrode contact via through the piezoelectric film; and
a top metal physically coupled to the first electrode through the electrode contact via.
7. An RF filter system, comprising:
a plurality of bulk acoustic wave resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators, each of the resonators of the plurality of resonators comprising:
a support member including a surface, the support member including a multilayer reflector structure including two pairs of a low impedance material layer and a high impedance material layer when the material layers are compared to each other;
a first electrode including tungsten overlying the multilayer reflector structure;
a piezoelectric film including aluminum scandium nitride overlapping the first electrode and overlying the multilayer reflector structure;
a second electrode including tungsten overlapping the piezoelectric film, overlapping the first electrode, and overlying the multilayer reflector, a resonator area being defined by an area where the second electrode, the piezoelectric film, and the first electrode overlap; and
a passivation layer including silicon nitride overlying the second electrode; wherein,
portions of the surface of the support member of at least one resonator of the plurality of bulk acoustic wave resonators define a cavity region and at least a portion of the first electrode of the at least one resonator is located within the cavity region defined by the surface of the support member;
the circuit response corresponding to the serial configuration and the parallel configuration of the plurality of resonators has a pass band having a bandwidth from 5.170 GHz to 5.835 GHz; and
at least one resonator of the plurality of bulk acoustic wave resonators including at least one trimmed material layer such that the pass band of the circuit has a bandwidth from 5.170 GHz to 5.835 GHz, wherein the at least one trimmed material layer includes a first thickness in the resonator area that is thinner than a second thickness in another area of the same material layer such that the pass band of the circuit has a bandwidth from 5.170 GHz to 5.835 GHz.
8. The system of claim 7 , wherein,
the at least one resonator of the plurality of bulk acoustic wave resonators including at least a portion of the first electrode located within the cavity region defined by the surface of the support member, and
the at least one resonator of the plurality of bulk acoustic wave resonators including at least one trimmed material layer,
are the same resonator.
9. The system of claim 8 , further comprising:
a mass loaded structure overlying the second electrode, wherein the passivation layer including silicon nitride overlies the mass loaded structure.
10. The system of claim 9 , the circuit having a circuit topology, wherein the serial configuration of resonators and the parallel shunt configuration of resonators are arranged in a ladder circuit topology having an insertion loss of ≤2.0 dB.
11. The system of claim 10 , further comprising:
at least one of the plurality of bulk acoustic wave resonators arranged in the circuit including:
an electrode contact via through the piezoelectric film; and
a top metal physically coupled to the first electrode through the electrode contact via.
12. The system of claim 1 , a resonator area being defined by an area where the second electrode, the piezoelectric film, and the first electrode overlap, the system further comprising:
a mass loaded structure overlying the second electrode, wherein the mass loaded structure is located outside of the resonator area.
13. The system of claim 10 , the circuit having a circuit topology, wherein the serial configuration of resonators and the parallel shunt configuration of resonators are arranged in a ladder circuit topology having an insertion loss of ≤2.0 dB.
14. The system of claim 10 , wherein the mass loaded structure surrounds the resonator area.
15. The system of claim 1 , wherein the piezoelectric film including aluminum scandium nitride is one of a single crystal material and a polycrystalline material.
16. The system of claim 1 , wherein
the first electrode is located within the cavity region defined by the surface of the support member such that the surface of the support member is contiguous with an upper surface of the first electrode.
17. The system of claim 1 , wherein the support member includes a single material layer.
18. A method of filtering a radio frequency signal comprising the steps of:
a. providing an RF filter including a plurality of bulk acoustic wave resonators arranged in a circuit having a series configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response, corresponding to the serial configuration and the parallel configuration of bulk acoustic wave resonators, including a pass band having a bandwidth from 5.170 GHz to 5.835 GHz to pass signals within this frequency range;
b. providing at least one bulk acoustic wave resonator in the RF filter including:
a support member having surface, portions of the surface defining a cavity region the support member;
a multilayer reflector structure including two pairs of a low impedance material layer and a high impedance material layer when the material layers are compared to each other;
a first electrode including tungsten overlying the multilayer reflector structure, at least a portion of the first electrode being located within the cavity region defined by the surface of the support member;
a piezoelectric film including aluminum scandium nitride overlapping the first electrode and overlying the multilayer reflector structure;
a second electrode including tungsten overlapping the piezoelectric film, overlapping the first electrode, and overlying the multilayer reflector; and
a passivation layer including silicon nitride overlying the second electrode.
19. The method of claim 18 further comprising:
providing the RF filter with a circuit response including a rejection band to reject signals above 5.85 GHz.
20. The method of claim 18 further comprising:
providing at least one resonator bulk acoustic wave resonator having at least one trimmed material layer such that the pass band of the circuit has a bandwidth from 5.170 GHz to 5.835 GHz, wherein the at least one trimmed material layer includes a first thickness in a resonator area that is thinner than a second thickness in another area of the same material layer such that the pass band of the circuit has a bandwidth from 5.170 GHz to 5.835 GHz, the resonator area being defined by an area where the second electrode, the piezoelectric film, and the first electrode overlap.