Semiconductor integrated circuit device
A layout structure of a capacitive cell using forksheet FETs is provided. In transistors P 3 and N 3 , VDD is supplied to a pair of pads and a gate interconnect, and VSS is supplied to a pair of pads and a gate interconnect. Capacitances are produced between nanosheets and the gate interconnect and between nanosheets and the gate interconnect. The faces of the nanosheets closer to the nanosheets are exposed from the gate interconnect, and the faces of the nanosheets closer to the nanosheets are exposed from the gate interconnect.
1. A semiconductor integrated circuit device including a standard cell that is a capacitive cell, the standard cell having a p-type region in which p-type transistors are formed and an n-type region in which n-type transistors are formed lying adjacent to each other in a first direction, comprising:
a first nanosheet unit constituted by one nanosheet or two or more nanosheets arranged in the first direction, extending in a second direction vertical to the first direction in the p-type region;
a second nanosheet unit constituted by one nanosheet or two or more nanosheets arranged in the first direction, extending in the second direction in the n-type region;
a first gate interconnect extending in the first direction, formed to surround a periphery of the nanosheet of the first nanosheet unit in the first direction and a third direction perpendicular to the first and second directions;
a first pair of pads each connected with each end of the nanosheet of the first nanosheet unit in the second direction;
a second gate interconnect extending in the first direction, formed to surround a periphery of the nanosheet of the second nanosheet unit in the first direction and the third direction; and
a second pair of pads each connected with each end of the nanosheet of the second nanosheet unit in the second direction,
wherein
the first pair of pads and the second gate interconnect are supplied with a first power supply voltage, and the second pair of pads and the first gate interconnect are supplied with a second power supply voltage lower than the first power supply voltage, and
the first nanosheet unit and the second nanosheet unit are opposed to each other in the first direction, a nanosheet among the nanosheet of the first nanosheet unit closest to the second nanosheet unit is exposed from the first gate interconnect on a face opposed to the second nanosheet unit in the first direction, and a nanosheet among the nanosheet of the second nanosheet unit closest to the first nanosheet unit is exposed from the second gate interconnect on a face opposed to the first nanosheet unit in the first direction.
2. The semiconductor integrated circuit device of claim 1 , wherein
each of the nanosheets of the first and second nanosheet units is constituted by one nanosheet or a stacked structure of a plurality of nanosheets overlapping as viewed in plan.
3. The semiconductor integrated circuit device of claim 1 , wherein
the first and second gate interconnects are placed at a same position in the second direction.
4. The semiconductor integrated circuit device of claim 1 , comprising:
a first power line extending in the second direction, supplying the first power supply voltage;
a second power line extending in the second direction, supplying the second power supply voltage; and
a fixed value output unit connected with the first and second power lines, supplying the second power supply voltage to the first gate interconnect and supplying the first power supply voltage to the second gate interconnect,
wherein
the fixed value output unit includes
a first p-type transistor formed in the p-type region, connected with the first power line at its source, and
a first n-type transistor formed in the n-type region, connected with the second power line at its source,
the first gate interconnect is electrically connected with a gate of the first p-type transistor and the source of the first n-type transistor, and
the second gate interconnect is electrically connected with a drain of the first p-type transistor and a gate of the first n-type transistor.
5. A semiconductor integrated circuit device including a standard cell that is a capacitive cell, the standard cell having a first region in which transistors of a first-conductivity type are formed and a second region in which transistors of a second conductivity type are formed lying adjacent to each other in a first direction, comprising:
a first nanosheet unit constituted by one nanosheet or two or more nanosheets arranged in the first direction, extending in a second direction vertical to the first direction in the first region;
a second nanosheet unit constituted by one nanosheet or two or more nanosheets arranged in the first direction, extending in the second direction in the second region;
a first gate interconnect extending in the first direction, formed to surround a periphery of the nanosheet of the first nanosheet unit in the first direction and a third direction perpendicular to the first and second directions;
a first pair of pads each connected with each end of the nanosheet of the first nanosheet unit in the second direction;
a second gate interconnect extending in the first direction, formed to surround a periphery of the nanosheet of the second nanosheet unit in the first direction and the third direction; and
a second pair of pads each connected with each end of the nanosheet of the second nanosheet unit in the second direction,
the first and second gate interconnects are supplied with a first power supply voltage, and the first and second pairs of pads are supplied with a second power supply voltage different from the first power supply voltage, and
the first nanosheet unit and the second nanosheet unit are opposed to each other in the first direction, a nanosheet among the nanosheet of the first nanosheet unit closest to the second nanosheet unit is exposed from the first gate interconnect on a face opposed to the second nanosheet unit in the first direction, and a nanosheet among the nanosheet of the second nanosheet unit closest to the first nanosheet unit is exposed from the second gate interconnect on a face opposed to the first nanosheet unit in the first direction.
6. The semiconductor integrated circuit device of claim 5 , wherein
each of the nanosheets of the first and second nanosheet units is constituted by one nanosheet or a stacked structure of a plurality of nanosheets overlapping as viewed in plan.
7. The semiconductor integrated circuit device of claim 5 , wherein
the first and second gate interconnects are placed at a same position in the second direction, and
a gate connecting portion is formed between the first gate interconnect and the second gate interconnect for connecting the first and second gate interconnects.
8. The semiconductor integrated circuit device of claim 5 , comprising:
a first local interconnect extending in the first direction, connecting one of the first pair of pads and one of the second pair of pads; and
a second local interconnect extending in the first direction, connecting the other of the first pair of pads and the other of the second pair of pads.
9. The semiconductor integrated circuit device of claim 5 , wherein
the first conductivity type is a p-type and the second conductivity type is an n-type, and
the first power supply voltage is higher than the second power supply voltage.
10. The semiconductor integrated circuit device of claim 5 , wherein
the first conductivity type is an n-type and the second conductivity type is a p-type, and
the first power supply voltage is lower than the second power supply voltage.
11. The semiconductor integrated circuit device of claim 5 , comprising:
a first power line extending in the second direction, supplying the first power supply voltage;
a second power line extending in the second direction, supplying the second power supply voltage; and
a fixed value output unit connected with the first and second power lines, supplying the first power supply voltage to the first and second gate interconnects,
wherein
the fixed value output unit includes
a first transistor formed in the first region, connected with the first power line at its source, and
a second transistor formed in the second region, connected with the second power line at its source,
the first and second gate interconnects are electrically connected with a drain of the first transistor and a gate of the second transistor.
12. The semiconductor integrated circuit device of claim 11 , wherein
the fixed value output unit supplies the second power supply voltage to the first and second pairs of pads, and
the first and second pairs of pads are electrically connected with a gate of the first transistor and a drain of the second transistor.