IP Library › Granted Patent US 12,451,468
Granted Patent B1
US 12,451,468 · App. 17/894,080 · Granted Oct 21, 2025

III-N devices with improved reliability

Inventors: Carl Joseph Neufeld (Goleta, CA); David Michael Rhodes (Santa Barbara, CA); Likun Shen (Goleta, CA); Ronald Avrom Barr (Santa Barbara, CA)
Assignee: Transphorm Technology, Inc.
H01L25/072H01L23/49844H01L24/46H01L24/49H10D30/47H10D30/471H01L2224/46H01L2224/48135H01L2224/48157H01L2224/4903H01L2224/49111H01L2224/49112H01L2224/4912
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Quick Facts
Patent No.
US 12,451,468
App. No.
17/894,080
Granted
Oct 21, 2025
Kind
B1
Abstract

An electronic component includes at least three terminals extending from a component package. The component includes a depletion-mode III-N transistor, and an enhancement-mode transistor in the package. A gate electrode of the enhancement-mode transistor is electrically connected to the first terminal, a source electrode of the enhancement-mode transistor and a gate electrode of the depletion-mode III-N transistor are electrically connected to the second terminal, a drain electrode of the enhancement-mode transistor is electrically connected to a source electrode of the depletion-mode III-N transistor, and a drain electrode of the depletion-mode III-N transistor is electrically connected to the third terminal. The drain electrode includes multiple drain pads each sequentially a further distance from the third terminal, where a wire-bond extends from each drain pad to the third terminal, each wire-bond having a length, where a diameter of the longest wire-bond is greater than the diameter of the shortest wire-bond.

Claims (19)

1. An electronic component, comprising:

a first terminal, a second terminal, and a third terminal extending from a component package; and

a depletion-mode III-N transistor, and an enhancement-mode transistor arranged in the package; wherein

a first gate electrode of the enhancement-mode transistor is electrically connected to the first terminal, a first source electrode of the enhancement-mode transistor and a second gate electrode of the depletion-mode III-N transistor are electrically connected to the second terminal, a first drain electrode of the enhancement-mode transistor is electrically connected to a second source electrode of the depletion-mode III-N transistor, and a second drain electrode of the depletion-mode III-N transistor is electrically connected to the third terminal; and

the second drain electrode comprises multiple drain pads each sequentially a further distance from the third terminal, wherein a wire-bond extends from each drain pad to the third terminal, each wire-bond comprising a length; wherein

a diameter of a longest wire-bond is greater than a diameter of a shortest wire-bond.

2. The component of claim 1 , wherein the diameter of the longest wire-bond is 10 mil or greater, and the diameter of the shortest wire-bond is less than 10 mil.

3. The component of claim 1 , wherein the diameter of each wire-bond increases monotonically from the wire-bond of the shortest length to the wire-bond of the longest length.

4. The component of claim 1 , further comprising a conductive structural package base, wherein a substrate of the depletion-mode III-N transistor is electrically connected to a second gate electrode of the III-N transistor and the substrate is electrically connected to the conductive structural package base.

5. The component of claim 4 , wherein the conductive structural package base is electrically connected to the second terminal.

6. An electronic component, comprising:

at least a first terminal extending from a component package; and

a III-N transistor arranged in the package; wherein

a drain electrode of the III-N transistor is electrically connected to the first terminal; and

the drain electrode comprising multiple drain pads each sequentially a further distance from the first terminal, wherein a wire-bond extends from each drain pad to the first terminal, each wire-bond comprising a length and a diameter; wherein

a diameter of a longest wire-bond is greater than a diameter of a shortest wire-bond.

7. The component of claim 6 , wherein the III-N transistor is an enhancement-mode transistor or a depletion-mode transistor.

8. The component of claim 6 , wherein the diameter of the longest wire-bond is 10 mil or greater, and the diameter of the shortest wire-bond is less than 10 mil.

9. The component of claim 6 , wherein the diameter of each wire-bond increases monotonically from the wire-bond of the shortest length to the wire-bond of the longest length.

Assignments (2)
SECURITY INTEREST Recorded Mar 1, 2024
From: TRANSPHORM TECHNOLOGY, INC.; TRANSPHORM, INC.
To: RENESAS ELECTRONICS AMERICA INC.
Reel/Frame 066713/0531 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 11, 2022
From: NEUFELD, CARL JOSEPH; RHODES, DAVID MICHAEL; SHEN, LIKUN; BARR, RONALD AVROM
To: TRANSPHORM TECHNOLOGY, INC.
Reel/Frame 061383/0795 →
Continuity (1)
Provisional Application 63237015 · Aug 25, 2021
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