Patent Assignment
Reel/Frame 066713/0531
Security Interest
Recorded: 2024-03-01
Pages: 18
Assignee
RENESAS ELECTRONICS AMERICA INC.
C/O RENESAS ELECTRONICS CORPORATION, 3-2-24, TOYUSU, KOTO-KU, TOKYO, 135-0061, JAPAN
Covered Properties
(128)
Integrated Design for Iii-Nitride Devices
Lateral Iii-Nitride Devices Including a Vertical Gate Module
Iii-Nitride Devices with Through-via Structures
Module Configurations for Integrated Iii-Nitride Devices
Iii-Nitride Devices Including a Depleting Layer
Application:
18/019,742 →
Publication:
US 2023/0299190
N-Polar Devices Including a Depleting Layer with Improved Conductivity
Iii-N Devices with Improved Reliability
Patent:
12,451,468 →
Application:
17/894,080 →
Configurations for Four Quadrant Iii-Nitride Switches
Application:
63/444,786 →
Integrated Design for Iii-Nitride Devices
Iii-Nitride Devices with Recessed Gates
Bridge Circuits and Their Components
Semiconductor Heterostructure Diodes
Gallium Nitride Power Devices
Bridge Circuits and Their Components
Transistors with Isolation Regions
Iii-N Device Structures and Methods
Buffer Layer Structures Suited for Iii-Nitride Devices with Foreign Substrates
Buffer Layer Structures Suited for Iii-Nitride Devices with Foreign Substrates
Bridgeless Power Factor Correction Circuits
Patent:
10,063,138 →
Application:
15/428,726 →
Semiconductor Heterostructure Diodes
Bridge Circuits and Their Components
Inductive Load Power Switching Circuits
Semiconductor Power Modules and Devices
Method of Forming Electronic Components with Increased Reliability
Semiconductor Devices with Field Plates
Enhancement Mode III-N HEMTs
Semiconductor Modules and Methods of Forming the Same
Semiconductor Electronic Components and Circuits
Insulated Gate E-Mode Transistors
Inductive Load Power Switching Circuits
N-Polar Iii-Nitride Transistors
Enhancement-Mode Iii-Nitride Devices
Methods of Forming Reverse Side Engineered Iii-Nitride Devices
Inductive Load Power Switching Circuits
Semiconductor Electronic Components with Integrated Current Limiters
Enhancement Mode Gallium Nitride Power Devices
Electronic Components with Reactive Filters
Iii-N Device Structures and Methods
Transistors with Isolation Regions
High Voltage Iii-Nitride Semiconductor Devices
Semiconductor Heterostructure Diodes
Package Configurations for Low Emi Circuits
Semiconductor Devices with Guard Rings
Semiconductor Power Modules and Devices
Method for Making Semiconductor Diodes with Low Reverse Bias Currents
Transistors with Isolation Regions
Iii-Nitride Transistor Including a P-Type Depleting Layer
Gate Structures for Iii-N Devices
Forming Enhancement Mode Iii-Nitride Devices
Methods of Forming Reverse Side Engineered Iii-Nitride Devices
Switching Circuits Having Drain Connected Ferrite Beads
Patent:
11,309,884 →
Application:
17/138,101 →
Gate Drivers for Circuits Based on Semiconductor Devices
Enhancement-Mode Iii-Nitride Devices
Semiconductor Devices with Integrated Hole Collectors
Switching Circuits Having Ferrite Beads
Inductive Load Power Switching Circuits
Semiconductor Modules and Methods of Forming the Same
Semiconductor Devices with Field Plates
Switching Circuits Having Drain Connected Ferrite Beads
Patent:
10,630,285 →
Application:
16/195,578 →
Enhancement Mode Gallium Nitride Power Devices
Reverse Side Engineered Iii-Nitride Devices
Carbon Doping Semiconductor Devices
Iii-Nitride Devices Including a Graded Depleting Layer
Paralleling of Switching Devices for High Power Circuits
Iii-Nitride Devices with Recessed Gates
Enhancement Mode Gallium Nitride Power Devices
Package Configurations for Low Emi Circuits
Enhancement Mode III-N HEMTs
Package Configurations for Low Emi Circuits
Multilevel Inverters and Their Components
Iii-N Device Structures and Methods
Iii-Nitride Transistor Including a P-Type Depleting Layer
Iii-Nitride Transistor Including a Iii-N Depleting Layer
Iii-Nitride Devices and Circuits
Enhancement Mode Iii-N Hemts
Semiconductor Diodes with Low Reverse Bias Currents
Electronic Devices and Components for High Efficiency Power Circuits
Forming Enhancement Mode Iii-Nitride Devices
Gallium Nitride Power Devices
Electrodes for Semiconductor Devices and Methods of Forming the Same
Bridgeless Power Factor Correction Circuits
Patent:
9,590,494 →
Application:
14/802,333 →
Enhancement-Mode Iii-Nitride Devices
Conditions for Burn-in of High Power Semiconductors
Package Configurations for Low Emi Circuits
High Power Semiconductor Electronic Components with Increased Reliability
Electrode Configurations for Semiconductor Devices
Gate Drivers for Circuits Based on Semiconductor Devices
Semiconductor Electronic Components with Integrated Current Limiters
Semiconductor Devices with Field Plates
Recessed Ohmic Contacts in a Iii-N Device
Lateral Iii-Nitride Devices Including a Vertical Gate Module
N-Polar Iii-Nitride Transistors
Carbon Doping Semiconductor Devices
Iii-N Device Structures Having a Non-Insulating Substrate
Iii-Nitride Devices Including a Graded Depleting Layer
Switching Circuits Having Drain Connected Ferrite Beads
Patent:
10,897,249 →
Application:
16/810,735 →
Iii-Nitride Bidirectional Switches
Semiconductor Devices with Field Plates
Package Configurations for Low Emi Circuits
Electrode Configurations for Semiconductor Devices
Electrodes for Semiconductor Devices and Methods of Forming the Same
Semiconductor Devices with Integrated Hole Collectors
Semiconductor Power Modules and Devices
Switching Circuits Having Ferrite Beads
Semiconductor Power Modules and Devices
Enhancement Mode Iii-Nitride Devices Having an AL1-Xsixo Gate Insulator
Iii-Nitride Devices Including a Graded Depleting Layer
High Voltage Iii-Nitride Semiconductor Devices
Switching Circuits Having Ferrite Beads
Semiconductor Electronic Components and Circuits
Semiconductor Devices with Field Plates
Enhancement Mode Iii-N Hemts
Method of Forming Electronic Components with Reactive Filters
Semiconductor Devices with Guard Rings
Semiconductor Electronic Components with Integrated Current Limiters
Bridge Circuits and Their Components
Carbon Doping Semiconductor Devices
Enhancement Mode III-N HEMTs
Enhancement-Mode Iii-Nitride Devices
Inductive Load Power Switching Circuits
Semiconductor Heterostructure Diodes
Method of Forming Electronic Components with Increased Reliability
Electronic Devices and Components for High Efficiency Power Circuits
Module Configurations for Integrated Iii-Nitride Devices
Module Assembly of Multiple Semiconductor Devices with Insulating Substrates
PCT:
PCT/US2022/082182 ↗
N-Polar Devices Including a Depleting Layer with Improved Conductivity
PCT:
PCT/US2023/061006 ↗
Cascode Normally Off Switch with Driver and Self Bias
PCT:
PCT/US2023/064447 ↗
High Voltage Iii-N Devices and Structures with Reduced Current Degradation
PCT:
PCT/US2023/070891 ↗
Related Assignments
(23)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
May 7, 2008
From: SUH, CHANG SOO; BEN-YAACOV, ILAN
To: TRANSPHORM INC.
Reel/Frame 020915/0428 →
Assignment of Assignor's Interest
Aug 4, 2011
From: HONEA, JAMES; WU, YIFENG
To: TRANSPHORM INC.
Reel/Frame 026703/0348 →
Assignment of Assignor's Interest
Feb 25, 2012
From: KELLER, STACIA; SWENSON, BRIAN L.; FICHTENBAUM, NICHOLAS
To: TRANSPHORM INC.
Reel/Frame 027763/0087 →
Assignment of Assignor's Interest
Aug 13, 2012
From: WU, YIFENG; MISHRA, UMESH; PARIKH, PRIMIT; BEN-YAACOV, ILAN
To: TRANSPHORM INC.
Reel/Frame 028777/0878 →
Assignment of Assignor's Interest
Feb 19, 2013
From: SUH, CHANG SOO; MISHRA, UMESH
To: TRANSPHORM INC.
Reel/Frame 029832/0930 →
Assignment of Assignor's Interest
Jul 23, 2013
From: HONEA, JAMES; WU, YIFENG
To: TRANSPHORM INC.
Reel/Frame 030861/0001 →
Assignment of Assignor's Interest
Jan 22, 2014
From: PARIKH, PRIMIT; DORA, YUVARAJ; WU, YIFENG; MISHRA, UMESH
To: TRANSPHORM INC.
Reel/Frame 032022/0526 →
Assignment of Assignor's Interest
Dec 10, 2015
From: KELLER, STACIA; SWENSON, BRIAN L.; FICHTENBAUM, NICHOLAS
To: TRANSPHORM INC.
Reel/Frame 037265/0208 →
Assignment of Assignor's Interest
Jan 19, 2016
From: MISHRA, UMESH; CHOWDHURY, SRABANTI
To: TRANSPHORM INC.
Reel/Frame 037526/0689 →
Security Interest
Apr 4, 2018
From: TRANSPHORM, INC.
To: NEXPERIA B.V.
Reel/Frame 045853/0159 →
Change of Name
Mar 4, 2020
From: TRANSPHORM, INC.
To: TRANSPHORM TECHNOLOGY, INC.
Reel/Frame 052091/0697 →
Change of Name
Jul 22, 2020
From: TRANSPHORM, INC.
To: TRANSPHORM TECHNOLOGY, INC.
Reel/Frame 053282/0350 →
Assignment of Assignor's Interest
Jul 22, 2020
From: MISHRA, UMESH; BISI, DAVIDE; GUPTA, GEETAK; NEUFELD, CARL JOSEPH
To: TRANSPHORM INC.
Reel/Frame 053282/0260 →
Assignment of Assignor's Interest
Jan 21, 2021
From: WU, YIFENG; GRITTERS, JOHN KIRK
To: TRANSPHORM INC.
Reel/Frame 054986/0695 →
Entity Conversion
Jan 22, 2021
From: TRANSPHORM INC.
To: TRANSPHORM TECHNOLOGY, INC.
Reel/Frame 055078/0625 →
Assignment of Assignor's Interest
May 6, 2022
From: GUPTA, GEETAK; MISHRA, UMESH; BISI, DAVIDE; LAL, RAKESH K.
To: TRANSPHORM TECHNOLOGY, INC.
Reel/Frame 059864/0653 →
Assignment of Assignor's Interest
Oct 11, 2022
From: NEUFELD, CARL JOSEPH; RHODES, DAVID MICHAEL; SHEN, LIKUN; BARR, RONALD AVROM
To: TRANSPHORM TECHNOLOGY, INC.
Reel/Frame 061383/0795 →
Assignment of Assignor's Interest
Feb 6, 2023
From: BISI, DAVIDE; GUPTA, GEETAK; MISHRA, UMESH; LAL, RAKESH K.
To: TRANSPHORM TECHNOLOGY, INC.
Reel/Frame 062597/0884 →
Assignment of Assignor's Interest
Apr 19, 2023
From: NEUFELD, CARL JOSEPH; RHODES, DAVID MICHAEL; BISI, DAVIDE; GUPTA, GEETAK
To: TRANSPHORM TECHNOLOGY, INC.
Reel/Frame 063376/0946 →
Assignment of Assignor's Interest
Jun 23, 2023
From: RHODES, DAVID MICHAEL; WU, YIFENG; YEA, SUNG HAE; PARIKH, PRIMIT
To: TRANSPHORM TECHNOLOGY, INC.
Reel/Frame 064048/0444 →
Merger and Change of Name
Oct 10, 2023
From: TRANSPHORM INC.; TRANSPHORM TECHNOLOGY, INC.
To: TRANSPHORM TECHNOLOGY, INC.
Reel/Frame 066039/0225 →
Assignment of Assignor's Interest
Oct 10, 2023
From: WU, YIFENG; GRITTERS, JOHN KIRK
To: TRANSPHORM INC.
Reel/Frame 065173/0009 →
Assignment of Assignor's Interest
Jan 3, 2024
From: GUPTA, GEETAK; MISHRA, UMESH; BISI, DAVIDE; RHODES, DAVID MICHAEL
To: TRANSPHORM TECHNOLOGY, INC.
Reel/Frame 066009/0608 →