IP Library › Assignment 052091/0697
Patent Assignment
Reel/Frame 052091/0697

Change of Name

Recorded: 2020-03-04 Pages: 7
Assignor
TRANSPHORM, INC.
Executed: 2020-02-12
Assignee
TRANSPHORM TECHNOLOGY, INC.
115 CASTILLIAN DRIVE, GOLETA, CALIFORNIA, 93117
Covered Properties (186)
Iii-Nitride Devices with Recessed Gates
Gallium Nitride Diodes and Integrated Components
Iii-Nitride Bidirectional Switches
Enhancement Mode Gallium Nitride Power Devices
Insulated Gate E-Mode Transistors
Bridge Circuits and Their Components
Enhancement Mode Iii-N Hemts
Inductive Load Power Switching Circuits
Semiconductor Heterostructure Diodes
Iii-Nitride Devices and Circuits
High Voltage Iii-Nitride Semiconductor Devices
Semiconductor Devices with Field Plates
Package Configurations for Low Emi Circuits
Reverse Side Engineered Iii-Nitride Devices
Electronic Devices and Components for High Efficiency Power Circuits
Semiconductor Electronic Components and Circuits
Layer Structures for Controlling Stress of Heteroepitaxially Grown Iii-Nitride Layers
Transistors with Isolation Regions
Iii-N Device Structures and Methods
Electronic Components with Reactive Filters
Electrode Configurations for Semiconductor Devices
High Power Semiconductor Electronic Components with Increased Reliability
Semiconductor Modules and Methods of Forming the Same
Buffer Layer Structures Suited for Iii-Nitride Devices with Foreign Substrates
Semiconductor Power Modules and Devices
N-Polar Iii-Nitride Transistors
Semiconductor Devices with Integrated Hole Collectors
Semiconductor Electronic Components with Integrated Current Limiters
Devices and Components for Power Conversion Circuits
Electrodes for Semiconductor Devices and Methods of Forming the Same
Enhancement-Mode Iii-Nitride Devices
Carbon Doping Semiconductor Devices
Gate Drivers for Circuits Based on Semiconductor Devices
Multilevel Inverters and Their Components
Iii-Nitride Transistor Including a P-Type Depleting Layer
Switching Circuits Having Ferrite Beads
Forming Enhancement Mode Iii-Nitride Devices
Recessed Ohmic Contacts in a Iii-N Device
Paralleling of Switching Devices for High Power Circuits
ENHANCEMENT MODE III-NITRIDE DEVICES HAVING AN AL1-xSIxO GATE INSULATOR
Iii-Nitride Devices Including a Graded Depleting Layer
Lateral Iii-Nitride Devices Including a Vertical Gate Module
Enhancement Mode Gallium Nitride Power Devices
Patent: 7,915,643 →
Application: 11/856,687 →
Publication: US 2009/0072272
Gallium Nitride Diodes and Integrated Components
Application: 11/856,695 →
Publication: US 2009/0072269
Iii-Nitride Devices with Recessed Gates
Patent: 7,795,642 →
Application: 12/102,340 →
Publication: US 2009/0072240
Enhancement Mode Iii-N Hemts
Patent: 8,519,438 →
Application: 12/108,449 →
Publication: US 2009/0267078
Growing N-polar III-nitride Structures
Application: 12/209,504 →
Publication: US 2009/0075455
Iii-Nitride Bidirectional Switches
Patent: 7,875,907 →
Application: 12/209,581 →
Publication: US 2009/0065810
Insulated Gate E-Mode Transistors
Patent: 7,851,825 →
Application: 12/324,574 →
Publication: US 2009/0146185
Semiconductor Heterostructure Diodes
Patent: 7,898,004 →
Application: 12/332,284 →
Publication: US 2010/0140660
Bridge Circuits and Their Components
Patent: 7,965,126 →
Application: 12/368,200 →
Publication: US 2009/0201072
Iii-Nitride Devices and Circuits
Patent: 7,884,394 →
Application: 12/368,248 →
Publication: US 2010/0201439
High Voltage Iii-Nitride Semiconductor Devices
Patent: 8,742,459 →
Application: 12/465,968 →
Publication: US 2010/0289067
Semiconductor Devices with Field Plates
Patent: 8,390,000 →
Application: 12/550,140 →
Publication: US 2011/0049526
Inductive Load Power Switching Circuits
Patent: 8,289,065 →
Application: 12/556,438 →
Publication: US 2010/0073067
Package Configurations for Low Emi Circuits
Patent: 8,138,529 →
Application: 12/611,018 →
Publication: US 2011/0101466
Reverse Side Engineered Iii-Nitride Devices
Patent: 8,389,977 →
Application: 12/635,405 →
Publication: US 2011/0140172
Electronic Devices and Components for High Efficiency Power Circuits
Patent: 8,816,497 →
Application: 12/684,838 →
Publication: US 2011/0169549
Semiconductor Electronic Components and Circuits
Patent: 8,624,662 →
Application: 12/701,458 →
Publication: US 2011/0193619
Iii-Nitride Devices with Recessed Gates
Patent: 7,939,391 →
Application: 12/816,971 →
Publication: US 2010/0255646
Layer Structures for Controlling Stress of Heteroepitaxially Grown Iii-Nitride Layers
Application: 12/953,769 →
Publication: US 2012/0126239
Transistors with Isolation Regions
Patent: 8,742,460 →
Application: 12/968,704 →
Publication: US 2012/0153390
Semiconductor Heterostructure Diodes
Patent: 8,237,198 →
Application: 13/008,874 →
Publication: US 2011/0127541
Enhancement Mode Gallium Nitride Power Devices
Patent: 8,193,562 →
Application: 13/019,150 →
Publication: US 2011/0121314
Iii-N Device Structures and Methods
Patent: 8,643,062 →
Application: 13/019,733 →
Publication: US 2012/0193677
Semiconductor Diodes with Low Reverse Bias Currents
Patent: 8,772,842 →
Application: 13/040,524 →
Publication: US 2012/0223319
Electrode Configurations for Semiconductor Devices
Patent: 8,716,141 →
Application: 13/040,940 →
Publication: US 2012/0223320
Bridge Circuits and Their Components
Patent: 8,508,281 →
Application: 13/164,109 →
Publication: US 2011/0249477
Semiconductor Devices with Guard Rings
Patent: 8,901,604 →
Application: 13/226,380 →
Publication: US 2013/0056744
Iii-N Device Structures Having a Non-Insulating Substrate
Patent: 9,257,547 →
Application: 13/231,308 →
Publication: US 2013/0062621
High Power Semiconductor Electronic Components with Increased Reliability
Patent: 8,598,937 →
Application: 13/269,367 →
Publication: US 2013/0088280
Package Configurations for Low Emi Circuits
Patent: 8,455,931 →
Application: 13/355,885 →
Publication: US 2012/0132973
Buffer Layer Structures Suited for Iii-Nitride Devices with Foreign Substrates
Patent: 9,165,766 →
Application: 13/366,090 →
Publication: US 2013/0200495
Electronic Components with Reactive Filters
Patent: 8,786,327 →
Application: 13/403,813 →
Publication: US 2012/0218025
Semiconductor Power Modules and Devices
Patent: 8,648,643 →
Application: 13/405,041 →
Publication: US 2013/0222045
Enhancement Mode Gallium Nitride Power Devices
Patent: 8,344,424 →
Application: 13/406,723 →
Publication: US 2012/0175680
Semiconductor Heterostructure Diodes
Patent: 8,541,818 →
Application: 13/533,339 →
Publication: US 2012/0267640
Semiconductor Devices with Integrated Hole Collectors
Patent: 9,184,275 →
Application: 13/535,094 →
Publication: US 2014/0001557
Semiconductor Electronic Components with Integrated Current Limiters
Patent: 8,803,246 →
Application: 13/550,445 →
Publication: US 2014/0015066
Inductive Load Power Switching Circuits
Patent: 8,493,129 →
Application: 13/618,502 →
Publication: US 2013/0009613
Inductive Load Power Switching Circuits
Patent: 8,531,232 →
Application: 13/618,726 →
Publication: US 2013/0009692
Semiconductor Modules and Methods of Forming the Same
Patent: 9,209,176 →
Application: 13/690,103 →
Publication: US 2013/0147540
Gallium Nitride Power Devices
Patent: 8,633,518 →
Application: 13/723,753 →
Publication: US 2013/0175580
Semiconductor Devices with Field Plates
Patent: 8,692,294 →
Application: 13/748,907 →
Publication: US 2013/0200435
Methods of Forming Reverse Side Engineered Iii-Nitride Devices
Patent: 9,496,137 →
Application: 13/756,284 →
Publication: US 2013/0210220
Enhancement-Mode Iii-Nitride Devices
Patent: 9,087,718 →
Application: 13/799,989 →
Publication: US 2014/0264431
Devices and Components for Power Conversion Circuits
Application: 13/803,912 →
Publication: US 2014/0021934
N-Polar Iii-Nitride Transistors
Patent: 9,093,366 →
Application: 13/859,635 →
Publication: US 2013/0264578
Package Configurations for Low Emi Circuits
Patent: 8,592,974 →
Application: 13/873,855 →
Publication: US 2013/0234257
Bridge Circuits and Their Components
Patent: 8,912,839 →
Application: 13/887,204 →
Publication: US 2013/0249622
Enhancement Mode Iii-N Hemts
Patent: 8,841,702 →
Application: 13/954,772 →
Publication: US 2013/0316502
Inductive Load Power Switching Circuits
Patent: 8,816,751 →
Application: 13/959,483 →
Publication: US 2013/0320939
Semiconductor Heterostructure Diodes
Patent: 9,041,065 →
Application: 13/973,890 →
Publication: US 2014/0054603
Semiconductor Electronic Components and Circuits
Patent: 9,293,458 →
Application: 14/058,089 →
Publication: US 2014/0042495
Package Configurations for Low Emi Circuits
Patent: 8,890,314 →
Application: 14/063,438 →
Publication: US 2014/0048849
Method of Forming Electronic Components with Increased Reliability
Patent: 8,860,495 →
Application: 14/068,944 →
Publication: US 2014/0094010
Iii-N Device Structures and Methods
Patent: 8,895,421 →
Application: 14/102,750 →
Publication: US 2014/0099757
Gallium Nitride Power Devices
Patent: 9,343,560 →
Application: 14/108,642 →
Publication: US 2014/0103399
Semiconductor Power Modules and Devices
Patent: 8,952,750 →
Application: 14/134,878 →
Publication: US 2014/0103989
Semiconductor Devices with Field Plates
Patent: 9,111,961 →
Application: 14/178,701 →
Publication: US 2014/0162421
Electrodes for Semiconductor Devices and Methods of Forming the Same
Patent: 9,171,730 →
Application: 14/179,788 →
Publication: US 2014/0231823
Carbon Doping Semiconductor Devices
Patent: 9,245,992 →
Application: 14/208,304 →
Publication: US 2014/0264370
Carbon Doping Semiconductor Devices
Patent: 9,245,993 →
Application: 14/208,482 →
Publication: US 2014/0264455
Electrode Configurations for Semiconductor Devices
Patent: 9,142,659 →
Application: 14/211,104 →
Publication: US 2014/0197421
Gate Drivers for Circuits Based on Semiconductor Devices
Patent: 9,059,076 →
Application: 14/222,992 →
Publication: US 2014/0292395
Transistors with Isolation Regions
Patent: 9,147,760 →
Application: 14/260,808 →
Publication: US 2014/0231929
High Voltage Iii-Nitride Semiconductor Devices
Patent: 9,293,561 →
Application: 14/262,649 →
Publication: US 2014/0342512
Method for Making Semiconductor Diodes with Low Reverse Bias Currents
Patent: 8,895,423 →
Application: 14/288,682 →
Publication: US 2014/0273422
Method of Forming Electronic Components with Reactive Filters
Patent: 9,041,435 →
Application: 14/307,234 →
Publication: US 2014/0292394
Semiconductor Electronic Components with Integrated Current Limiters
Patent: 9,171,910 →
Application: 14/311,600 →
Publication: US 2014/0299940
Multilevel Inverters and Their Components
Patent: 9,537,425 →
Application: 14/321,269 →
Publication: US 2015/0016169
Switching Circuits Having Ferrite Beads
Patent: 9,543,940 →
Application: 14/323,777 →
Publication: US 2016/0006428
Iii-Nitride Transistor Including a P-Type Depleting Layer
Patent: 9,443,938 →
Application: 14/327,371 →
Publication: US 2015/0021552
Inductive Load Power Switching Circuits
Patent: 9,690,314 →
Application: 14/332,967 →
Publication: US 2014/0327412
Electronic Devices and Components for High Efficiency Power Circuits
Patent: 9,401,341 →
Application: 14/336,287 →
Publication: US 2014/0329358
Enhancement Mode III-N HEMTs
Patent: 9,196,716 →
Application: 14/464,639 →
Publication: US 2014/0361309
Method of Forming Electronic Components with Increased Reliability
Patent: 9,171,836 →
Application: 14/478,504 →
Publication: US 2014/0377930
Package Configurations for Low Emi Circuits
Patent: 9,190,295 →
Application: 14/480,980 →
Publication: US 2014/0377911
Iii-N Device Structures and Methods
Patent: 9,224,671 →
Application: 14/522,154 →
Publication: US 2015/0041861
Semiconductor Diodes with Low Reverse Bias Currents
Application: 14/524,299 →
Publication: US 2015/0041864
Semiconductor Devices with Guard Rings
Patent: 9,224,805 →
Application: 14/530,204 →
Publication: US 2015/0054117
Bridge Circuits and Their Components
Patent: 9,899,998 →
Application: 14/539,098 →
Publication: US 2015/0070076
Forming Enhancement Mode Iii-Nitride Devices
Patent: 9,318,593 →
Application: 14/542,937 →
Publication: US 2016/0020313
Recessed Ohmic Contacts in a Iii-N Device
Patent: 9,536,967 →
Application: 14/572,670 →
Publication: US 2016/0172455
Semiconductor Power Modules and Devices
Patent: 9,224,721 →
Application: 14/585,705 →
Publication: US 2015/0137217
Semiconductor Devices with Field Plates
Patent: 9,373,699 →
Application: 14/660,080 →
Publication: US 2015/0187893
Gate Drivers for Circuits Based on Semiconductor Devices
Patent: 9,362,903 →
Application: 14/708,627 →
Publication: US 2015/0249447
Enhancement-Mode Iii-Nitride Devices
Patent: 9,590,060 →
Application: 14/714,964 →
Publication: US 2015/0263112
N-Polar Iii-Nitride Transistors
Patent: 9,490,324 →
Application: 14/744,526 →
Publication: US 2015/0287785
Bridgeless Power Factor Correction Circuits
Patent: 9,590,494 →
Application: 14/802,333 →
Transistors with Isolation Regions
Patent: 9,437,707 →
Application: 14/810,906 →
Publication: US 2015/0333147
Buffer Layer Structures Suited for Iii-Nitride Devices with Foreign Substrates
Patent: 9,685,323 →
Application: 14/885,943 →
Publication: US 2016/0042946
Electrodes for Semiconductor Devices and Methods of Forming the Same
Patent: 9,520,491 →
Application: 14/920,059 →
Publication: US 2016/0043211
Semiconductor Electronic Components with Integrated Current Limiters
Patent: 9,443,849 →
Application: 14/920,760 →
Publication: US 2016/0043078
Semiconductor Devices with Integrated Hole Collectors
Patent: 9,634,100 →
Application: 14/934,565 →
Publication: US 2016/0064495
Enhancement Mode III-N HEMTs
Patent: 9,437,708 →
Application: 14/945,341 →
Publication: US 2016/0071951
Semiconductor Modules and Methods of Forming the Same
Application: 14/950,303 →
Publication: US 2016/0079154
Semiconductor Power Modules and Devices
Patent: 9,741,702 →
Application: 14/950,411 →
Publication: US 2016/0079223
Gate Structures for Iii-N Devices
Patent: 9,536,966 →
Application: 14/970,375 →
Publication: US 2016/0172480
Carbon Doping Semiconductor Devices
Application: 14/982,774 →
Publication: US 2016/0133737
Carbon Doping Semiconductor Devices
Patent: 9,865,719 →
Application: 14/991,188 →
Publication: US 2016/0126342
Forming Enhancement Mode Iii-Nitride Devices
Patent: 9,935,190 →
Application: 15/065,597 →
Publication: US 2016/0190298
Semiconductor Modules and Methods of Forming the Same
Patent: 9,818,686 →
Application: 15/138,681 →
Publication: US 2016/0240470
Gallium Nitride Power Devices
Application: 15/149,467 →
Publication: US 2016/0254363
Semiconductor Devices with Field Plates
Patent: 9,831,315 →
Application: 15/181,805 →
Publication: US 2016/0293747
Iii-Nitride Transistor Including a P-Type Depleting Layer
Patent: 9,842,922 →
Application: 15/227,240 →
Publication: US 2016/0343840
Enhancement Mode III-N HEMTs
Patent: 9,941,399 →
Application: 15/242,266 →
Publication: US 2016/0359030
Methods of Forming Reverse Side Engineered Iii-Nitride Devices
Application: 15/288,120 →
Publication: US 2017/0025267
Switching Circuits Having Ferrite Beads
Patent: 9,660,640 →
Application: 15/363,987 →
Publication: US 2017/0085258
Bridgeless Power Factor Correction Circuits
Application: 15/428,726 →
Enhancement-Mode Iii-Nitride Devices
Application: 15/440,404 →
Publication: US 2017/0162684
Switching Circuits Having Ferrite Beads
Patent: 9,991,884 →
Application: 15/491,920 →
Publication: US 2017/0222640
Paralleling of Switching Devices for High Power Circuits
Application: 15/554,170 →
Publication: US 2018/0083617
Iii-Nitride Devices Including a Graded Depleting Layer
Application: 15/564,498 →
Publication: US 2018/0158909
Iii-Nitride Transistor Including a Iii-N Depleting Layer
Application: 15/836,157 →
Publication: US 2018/0102425
Conditions for Burn-in of High Power Semiconductors
Application: 15/955,515 →
Publication: US 2018/0301386
Enhancement-Mode Iii-Nitride Devices
Application: 16/029,505 →
Publication: US 2018/0315843
Enhancement Mode Iii-Nitride Devices Having an AL1-Xsixo Gate Insulator
Application: 16/070,238 →
Publication: US 2021/0043750
Switching Circuits Having Drain Connected Ferrite Beads
Application: 16/195,578 →
Iii-Nitride Devices Including a Graded Depleting Layer
Application: 16/287,211 →
Publication: US 2019/0198615
Lateral Iii-Nitride Devices Including a Vertical Gate Module
Application: 16/598,510 →
Publication: US 2020/0119179
III-Nitride Bilateral Switches
Application: 60/971,721 →
Growing N-polar III-nitride Structures
Application: 60/972,467 →
III-Nitride Devices with Recessed Gates
Application: 60/972,481 →
Insulated gate E-mode transistors
Application: 61/012,755 →
Bridge Circuits and their Components
Application: 61/028,133 →
Inductive Load Power Switching Circuits
Application: 61/099,451 →
Electronic Components with Reactive Filters
Application: 61/447,519 →
Semiconductor Modules and Methods of Forming the Same
Application: 61/568,022 →
N-Polar Iii-Nitride Transistors
Application: 61/621,956 →
Devices and Components for Power Conversion Circuits
Application: 61/672,723 →
Electrodes for Semiconductor Devices and Methods of Forming the Same
Application: 61/765,635 →
Carbon Doping Semiconductor Devices
Application: 61/791,395 →
Gate Drivers for Circuits Based on Semiconductor Devices
Application: 61/807,258 →
Multilevel Inverters and Their Components
Application: 61/844,260 →
Iii-Nitride Transistor Including a P-Type Depleting Layer
Application: 61/856,573 →
Bridgeless Power Factor Correction Circuits
Application: 62/025,666 →
Forming Enhancement Mode Iii-Nitride Devices
Application: 62/027,126 →
Gate Structures for Iii-N Devices
Application: 62/092,732 →
Paralleling of Switching Devices for High Power Circuits
Application: 62/133,253 →
Enhancement Mode Iii-Nitride Devices Having an Amorphous Alxsiyo Gate Insulator
Application: 62/279,578 →
Iii-Nitride Transistor Including a Graded Depleting Layer
Application: 62/343,782 →
Conditions for Burn-in of High Power Semiconductors
Application: 62/486,417 →
Switching Circuits Having Drain Connected Ferrite Beads
Application: 62/589,509 →
Lateral Iii-Nitride Devices Including a Vertical Gate Module
Application: 62/745,213 →
Integrated Design for Iii-Nitride Devices
Application: 62/821,946 →
Related Assignments (9)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Nov 26, 2007
From: SUH, CHANG SOO; HONEA, JAMES; MISHRA, UMESH
To: TRANSPHORM INC.
Reel/Frame 020153/0592 →
Assignment of Assignor's Interest Nov 30, 2007
From: SUH, CHANG SOO; MISHRA, UMESH
To: TRANSPHORM INC.
Reel/Frame 020209/0792 →
Assignment of Assignor's Interest May 7, 2008
From: SUH, CHANG SOO; BEN-YAACOV, ILAN
To: TRANSPHORM INC.
Reel/Frame 020915/0428 →
Assignment of Assignor's Interest Apr 1, 2013
From: BROCKWAY, MARINA; BROCKWAY, BRIAN
To: VIVAQUANT LLC
Reel/Frame 030121/0691 →
Assignment of Assignor's Interest Aug 15, 2016
From: WANG, ZHAN
To: TRANSPHORM INC.
Reel/Frame 039436/0901 →
Assignment of Assignor's Interest Aug 15, 2016
From: KIKKAWA, TOSHIHIDE; KIUCHI, KENJI; HOSODA, TSUTOMU; KANAMURA, MASAHITO
To: TRANSPHORM INC.
Reel/Frame 039437/0029 →
Assignment of Assignor's Interest Jan 3, 2018
From: MISHRA, UMESH; LAL, RAKESH K.; GUPTA, GEETAK; NEUFELD, CARL JOSEPH
To: TRANSPHORM INC.
Reel/Frame 044520/0864 →
Security Interest Apr 4, 2018
From: TRANSPHORM, INC.
To: NEXPERIA B.V.
Reel/Frame 045853/0159 →
Security Interest Mar 1, 2024
From: TRANSPHORM TECHNOLOGY, INC.; TRANSPHORM, INC.
To: RENESAS ELECTRONICS AMERICA INC.
Reel/Frame 066713/0531 →