Semiconductor electronic components and circuits
An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor both encased in a single package. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, a drain electrode of the high-voltage depletion-mode transistor is electrically connected to a drain lead of the single package, a gate electrode of the low-voltage enhancement-mode transistor is electrically connected to a gate lead of the single package, a gate electrode of the high-voltage depletion-mode transistor is electrically connected to an additional lead of the single package, and a source electrode of the low-voltage enhancement-mode transistor is electrically connected to a conductive structural portion of the single package.
1. An electronic component, comprising:
a depletion-mode transistor;
an enhancement-mode transistor;
a resistor; and
a single package enclosing the depletion-mode transistor, the enhancement-mode transistor, and the resistor, the single package including
a package base formed of an electrically conducting material,
a source lead directly electrically connected to the package base, and
a gate lead and a drain lead, each of which is electrically isolated from the package base,
wherein the depletion-mode transistor, the enhancement-mode transistor, and the resistor are each provided on and supported by the package base,
wherein a source electrode of the depletion-mode transistor is directly electrically connected to a drain electrode of the enhancement-mode transistor, and a drain electrode of the depletion-mode transistor is directly electrically connected to the drain lead, thereby causing the drain electrode of the depletion-mode transistor to be electrically isolated from the package base,
wherein a first end of the resistor is directly electrically connected to a gate electrode of the depletion-mode transistor, and a second end of the resistor is directly electrically connected to the package base,
wherein a gate electrode of the enhancement-mode transistor is directly electrically connected to the gate lead, thereby causing the gate electrode of the enhancement-mode transistor to be electrically isolated from the package base, and
wherein a source electrode of the enhancement-mode transistor is directly electrically connected to the package base, thereby causing the source electrode of the enhancement-mode transistor and the second end of the resistor to be electrically connected to each other and to the source lead.
2. The electronic component of claim 1 , wherein the depletion-mode transistor and the resistor are on a common substrate.
3. The electronic component of claim 2 , wherein the depletion-mode transistor and the resistor comprise a same semiconductor layer structure.
4. The electronic component of claim 1 , wherein the depletion-mode transistor and the resistor both comprise III-N semiconductor materials.
5. The electronic component of claim 1 , wherein the depletion-mode transistor comprises a semiconductor layer structure, and the resistor comprises a conducting or semiconducting layer which is on the semiconductor layer structure.
6. The electronic component of claim 5 , wherein the depletion-mode transistor is a III-Nitride transistor.
7. The electronic component of claim 1 , wherein the resistor has a resistance of between about 100 Ohms and 100 kOhms.
8. The electronic component of claim 1 , wherein the enhancement-mode transistor is a silicon-based transistor.
9. The electronic component of claim 1 , wherein the enhancement-mode transistor is a III-Nitride transistor.
10. The electronic component of claim 1 , wherein the depletion-mode transistor is a III-Nitride transistor.
11. The electronic component of claim 1 , wherein the depletion-mode transistor is a high-voltage transistor, and the enhancement-mode transistor is a low-voltage transistor.
12. The electronic component of claim 1 , wherein the resistor comprises a III-N semiconductor material including a two-dimensional electron gas, and the first and second ends of the resistor contact the two-dimensional electron gas.
13. The electronic component of claim 1 , wherein the single package further comprises a case formed of an insulating material.
14. The electronic component of claim 13 , wherein the single package includes a gate lead and a drain lead, the case includes a plurality of sides, and the gate lead and drain lead are on a first side of the plurality of sides.