Buffer layer structures suited for III-nitride devices with foreign substrates
Embodiments of the present disclosure include a buffer structure suited for III-N device having a foreign substrate. The buffer structure can include a first buffer layer having a first aluminum composition and a second buffer layer formed on the first buffer layer, the second buffer layer having a second aluminum composition. The buffer structure further includes a third buffer layer formed on the second buffer layer at a second interface, the third buffer layer having a third aluminum composition. The first aluminum composition decreases in the first buffer layer towards the interface and the second aluminum composition throughout the second buffer layer is greater than the first aluminum composition at the interface.
1. A method of forming a III-N layer structure, the method comprising:
forming, a first III-N buffer layer having a first aluminum composition on a first material layer, the first III-N buffer layer having a first side adjacent to the first material layer and a second side opposite the first side;
forming a second III-N buffer layer on the second side of the first III-N buffer layer, wherein the second III-N buffer layer has a second aluminum composition and is greater than 100 nanometers thick; and
forming a third III-N buffer layer having a third aluminum composition, the second III-N buffer layer being between the first and third III-N buffer layers; wherein
the first aluminum composition is substantially constant in the first III-N buffer layer or decreases from the first side to the second side;
the second aluminum composition in the second III-N buffer layer is greater than the first aluminum composition at the second side of the first III-N buffer layer; and
the second aluminum composition is uniform throughout the second III-N buffer layer, and the third aluminum composition throughout the third III-N buffer layer is lower than the second aluminum composition.
2. The method of claim 1 , wherein a combined thickness of the first, second, and third III-N buffer layers is greater than 3 μm.
3. The method of claim 1 , wherein a combined thickness of the first, second, and third III-N buffer layers is greater than 7 μm.
4. The method of claim 1 , wherein the first, second, or third III-N buffer layers are doped with at least one element selected from the group consisting of iron (Fe), magnesium (Mg), and carbon (C).
5. A method of forming a III-N layer structure, comprising:
forming a first III-N buffer layer having a first aluminum composition on a first material layer, the first III-N buffer layer having a first side adjacent to the first material layer and a second side opposite the first side;
forming a second III-N buffer layer on the second side of the first III-N buffer layer, the second III-N buffer layer having a second aluminum composition and being greater than 15 nanometers thick; and
forming a third III-N buffer layer having a third aluminum composition, the second III-N buffer layer being between the first and third III-N buffer layers; wherein
the first aluminum composition is substantially constant in the first III-N buffer layer or decreases from the first side to the second side;
the second aluminum composition in the second III-N buffer layer is greater than the first aluminum composition at the second side of the first III-N buffer layer; and
the third III-N buffer layer has a first side adjacent to the second III-N buffer layer and a second side opposite the first side, wherein the third aluminum composition decreases from the first side of the third III-N buffer layer to the second side of the III-N buffer layer.
6. The method of claim 5 , wherein the first material layer is a substrate; and
the third aluminum composition decreases monotonically from the first side of the third III-N buffer layer to the second side of the third III-N buffer layer.
7. The method of claim 5 , wherein the second III-N buffer layer is greater than 100 nanometers thick.
8. The method of claim 5 , wherein a combined thickness of the first, second, and third III-N buffer layers is greater than 3 μm.
9. The method of claim 5 , wherein the first, second, or third III-N buffer layers are doped with at least one element selected from the group consisting of iron (Fe), magnesium (Mg), and carbon (C).
10. A method of forming a III-N layer structure, comprising:
forming a first III-N buffer layer having a first aluminum composition on a first material layer, the first III-N buffer layer having a first side adjacent to the first material layer and a second side opposite the first side;
forming a second III-N buffer layer on the second side of the first III-N buffer layer, the second III-N buffer layer having a second aluminum composition and being greater than 15 nanometers thick;
forming a third III-N buffer layer having a third aluminum composition, wherein the second III-N buffer layer is between the first and third III-N buffer layers; and
forming an active device layer over the third III-N buffer layer, the active device layer comprising a III-N semiconductor material; wherein
the first aluminum composition is substantially constant in the first III-N buffer layer or decreases from the first side to the second side;
the second aluminum composition in the second III-N buffer layer is greater than the first aluminum composition at the second side of the first III-N buffer layer; and
the first material layer is a substrate.
11. The method of claim 10 , wherein the first material layer is a silicon substrate.
12. The method of claim 11 , further comprising removing the substrate to expose a surface of the III-N layer structure.
13. The method of claim 10 , the III-N layer structure further comprising a conductive channel of an electronic semiconductor device in the active device layer, wherein the conductive channel is separated from the third III-N buffer layer by at least 20 nanometers.
14. The method of claim 13 , further comprising forming an electrode, wherein the electrode is electrically connected to the conductive channel.
15. A method of forming a III-N semiconductor device, comprising:
forming a first III-N buffer layer having a first aluminum composition on a first material layer, the first III-N buffer layer having a first side adjacent to the first material layer and a second side opposite the first side;
forming a second III-N buffer layer on the second side of the first III-N buffer layer, the second III-N buffer layer having a second aluminum composition and being greater than 100 nanometers thick;
forming a third III-N buffer layer having a third aluminum composition, wherein the second III-N buffer layer is between the first and third III-N buffer layers; and
forming an active device layer over the third III-N buffer layer, the active device layer comprising a III-N semiconductor material; wherein
the first aluminum composition is substantially constant in the first III-N buffer layer or decreases from the first side to the second side;
the second aluminum composition in the second III-N buffer layer is greater than the first aluminum composition at the second side of the first III-N buffer layer;
the second aluminum composition is constant or is non-uniform throughout the second III-N buffer layer;
the third aluminum composition throughout the third III-N buffer layer is lower than a lowest value of the second aluminum composition; and
the first material layer is a substrate.
16. The method of claim 15 , wherein the III-N semiconductor device further includes a conductive channel in the active device layer, and the III-N semiconductor device is an electronic device.
17. The method of claim 16 , wherein the conductive channel is separated from the third III-N buffer layer by at least 20 nanometers.
18. The method of claim 16 , wherein the electronic device is a transistor or a diode.
19. The method of claim 16 , further comprising forming an electrode, wherein the electrode is electrically connected to the conductive channel.