Semiconductor devices with guard rings
Semiconductor devices with guard rings are described. The semiconductor devices may be, e.g., transistors and diodes designed for high-voltage applications. A guard ring is a floating electrode formed of electrically conducting material above a semiconductor material layer. A portion of an insulating layer is between at least a portion of the guard ring and the semiconductor material layer. A guard ring may be located, for example, on a transistor between a gate and a drain electrode. A semiconductor device may have one or more guard rings.
1. A semiconductor diode comprising:
a semiconductor material layer;
a conductive channel in the semiconductor material layer;
a cathode and an anode, the cathode contacting the conductive channel;
an insulating layer on a surface of the semiconductor material layer; and
a guard ring above the semiconductor material layer and between the cathode and the anode, the guard ring comprising an electrically conductive material which is electrically isolated from the cathode and the anode.
2. The semiconductor diode of claim 1 , wherein a portion of the insulating layer is between at least a portion of the guard ring and the semiconductor material layer.
3. The semiconductor diode of claim 1 , wherein the guard ring comprises a field mitigating portion.
4. The semiconductor diode of claim 3 , wherein the field mitigating portion comprises electrically conductive material extending from the guard ring towards the cathode.
5. The semiconductor diode of claim 3 , wherein the field mitigating portion is slanted, being formed around a via in the insulating layer that is narrower towards the bottom of the insulating layer and wider towards the top of the insulating layer.
6. The semiconductor diode of claim 1 , wherein the guard ring is not electrically connected to any DC and AC voltage sources.
7. The semiconductor diode of claim 1 , further comprising a field plate.
8. The semiconductor diode of claim 7 , wherein the field plate is electrically connected to the anode.
9. The semiconductor diode of claim 7 , wherein the field plate comprises electrically conducting material contacting the anode and extending from the anode towards the cathode over the top of the insulating layer.
10. The semiconductor diode of claim 7 , wherein the field plate is slanted, being formed around a via in the insulating layer that is narrower towards a bottom of the insulating layer and wider towards a top of the insulating layer.
11. The semiconductor diode of claim 1 , wherein the guard ring extends from a top of the insulating layer towards a bottom of the insulating layer without contacting the semiconductor material layer.
12. The semiconductor diode of claim 1 , wherein the guard ring extends from a top of the insulating layer towards a bottom of the insulating layer and contacts the semiconductor material layer.
13. The semiconductor diode of claim 1 , wherein the guard ring is a distance from the anode where a depletion region in the semiconductor material layer extends prior to or at breakdown of the diode in a similar diode which lacks the guard ring.
14. The semiconductor diode of claim 1 , wherein the diode is a III-N device.
15. The semiconductor diode of claim 1 , wherein the diode is a high-voltage device.
16. A method of manufacturing a semiconductor diode, the method comprising:
forming a semiconductor material layer on a substrate;
forming an insulating layer on top of the semiconductor material layer;
adding a cathode and an anode, the cathode contacting a conductive channel in the semiconductor material layer;
etching the insulating layer to receive a deposition of conductive material; and
depositing conductive material to form a guard ring between the cathode and the anode, wherein the guard ring is electrically isolated from the cathode and the anode.
17. The method of claim 16 , wherein a portion of the insulating layer is between at least a portion of the guard ring and the semiconductor material layer.
18. The method of claim 16 , wherein the guard ring comprises a field mitigating portion.
19. The method of claim 18 , wherein the field mitigating portion comprises electrically conductive material extending from the guard ring towards the cathode.
20. The method of claim 18 , wherein the field mitigating portion is slanted, being formed around a via that is narrower towards the bottom of the insulating layer and wider towards the top of the insulating layer.
21. The method of claim 16 , wherein the guard ring is not electrically connected to any DC and AC voltage sources.
22. The method of claim 16 , wherein etching the insulating layer comprises etching the insulating layer to define a field plate.
23. The method of claim 22 , wherein the field plate is electrically connected to the anode.
24. The method of claim 22 , wherein the field plate comprises electrically conducting material contacting the anode and extending from the anode towards the cathode over the top of the insulating layer.
25. The method of claim 22 , wherein the field plate is slanted, being formed around a via in the insulating layer that is narrower towards a bottom of the insulating layer and wider towards a top of the insulating layer.