Semiconductor electronic components with integrated current limiters

1. An electronic component, comprising:

a depletion-mode transistor having a first breakdown voltage and a first maximum current level, the depletion-mode transistor comprising a source electrode, a gate electrode, a drain electrode, a semiconductor material layer, and a channel in the semiconductor material layer; and

an enhancement-mode transistor having a second breakdown voltage and a second maximum current level, the enhancement-mode transistor comprising a source electrode, a gate electrode, and a drain electrode; wherein

the source electrode of the depletion-mode transistor is electrically connected to the drain electrode of the enhancement-mode transistor and the gate electrode of the depletion-mode transistor is electrically coupled to the source electrode of the enhancement-mode transistor;

a conductivity or charge density of the channel is smaller in a gate region of the depletion-mode transistor than in an access region of the depletion-mode transistor when 0V is applied to the gate electrode of the depletion-mode transistor relative to the source electrode of the depletion-mode transistor; and

the first maximum current level is smaller than the second maximum current level.

2. The electronic component of claim 1 , wherein the second breakdown voltage is smaller than the first breakdown voltage.

3. The electronic component of claim 2 , wherein the depletion-mode transistor is a high-voltage device and the enhancement-mode transistor is a low-voltage device.

4. The electronic component of claim 3 , wherein the first breakdown voltage is at least ten times second breakdown voltage.

5. The electronic component of claim 3 , wherein the electronic component is configured to function substantially similarly to a single high-voltage enhancement-mode transistor.

6. The electronic component of claim 1 , wherein the depletion-mode transistor is a III-N device.

7. The electronic component of claim 1 , wherein the enhancement-mode transistor is a Silicon device or a III-N device.

8. The electronic component of claim 1 , wherein the gate electrode of the depletion-mode transistor is electrically connected to the source electrode of the enhancement-mode transistor.

9. A method of operating an electronic component, the electronic component comprising:

a depletion-mode transistor having a first breakdown voltage and a first maximum current level, the depletion-mode transistor comprising a source electrode, a gate electrode, a drain electrode, a semiconductor material layer including a recess in a gate region of the depletion-mode transistor, and a channel in the semiconductor material layer, the recess causing a conductivity or charge density of the channel to be smaller in the gate region of the depletion-mode transistor than in an access region of the depletion-mode transistor when 0V is applied to the gate electrode of the depletion-mode transistor relative to the source electrode of the depletion-mode transistor; and

an enhancement-mode transistor having a second breakdown voltage and a second maximum current level, the enhancement-mode transistor comprising a source electrode, a gate electrode, and a drain electrode, the source electrode of the depletion-mode transistor being electrically connected to the drain electrode of the enhancement-mode transistor and the gate electrode of the depletion-mode transistor being electrically coupled to the source electrode of the enhancement-mode transistor;

the method comprising applying a positive voltage to the gate electrode of the enhancement-mode transistor relative to the source electrode of the enhancement-mode transistor, and applying a substantial positive voltage to the drain electrode of the depletion-mode transistor relative to the source electrode of the enhancement-mode transistor, causing a maximum current level of the electronic component to flow between the source electrode of the enhancement-mode transistor and the drain electrode of the depletion-mode transistor, wherein the maximum current level of the electronic component is smaller than or equal to the first maximum current level, and the first maximum current level is smaller than the second maximum current level.

10. The method of claim 9 , wherein the second breakdown voltage is smaller than the first breakdown voltage.

11. The method of claim 9 , wherein the depletion-mode transistor is a III-N device.

12. The method of claim 11 , wherein the enhancement-mode transistor is a Silicon device or a III-N device.

13. The method of claim 9 , wherein the gate electrode of the depletion-mode transistor is electrically connected to the source electrode of the enhancement-mode transistor.

14. The method of claim 9 , wherein the recess extends through the channel.

15. The method of claim 9 , further comprising an insulating material between the gate electrode and the semiconductor material layer.

16. The electronic component of claim 15 , wherein the insulating material prevents the gate electrode from directly contacting the semiconductor material layer.

17. A method of operating an electronic component, the electronic component comprising:

a depletion-mode transistor having a first breakdown voltage, a first on-resistance, and a first maximum current level, the depletion-mode transistor comprising a source electrode, a gate electrode, a drain electrode, a semiconductor material including a gate region between the source and drain, and a channel in the semiconductor material layer; and

an enhancement-mode transistor having a second breakdown voltage, a second on-resistance, and a second maximum current level, the enhancement-mode transistor comprising a source electrode, a gate electrode, and a drain electrode, the source electrode of the depletion-mode transistor being electrically connected to the drain electrode of the enhancement-mode transistor and the gate electrode of the depletion-mode transistor being electrically coupled to the source electrode of the enhancement-mode transistor;

the method comprising applying a positive voltage to the gate electrode of the enhancement-mode transistor relative to the source electrode of the enhancement-mode transistor, and applying a substantial positive voltage to the drain electrode of the depletion-mode transistor relative to the source electrode of the enhancement-mode transistor, causing a maximum current level of the electronic component to flow between the source electrode of the enhancement-mode transistor and the drain electrode of the depletion-mode transistor, wherein the maximum current level of the electronic component is smaller than or equal to the first maximum current level, the second on-resistance is less than half the first on-resistance, and the second maximum current level is lower than the first maximum current level.

18. The method of claim 17 , wherein the second breakdown voltage is smaller than the first breakdown voltage.

19. The method of claim 17 , wherein the depletion-mode transistor is a III-N device.

20. The method of claim 17 , wherein the second maximum current level is less than half the first maximum current level.