Enhancement-mode III-nitride devices
A III-N enhancement-mode transistor includes a III-N structure including a conductive channel, source and drain contacts, and a gate electrode between the source and drain contacts. An insulator layer is over the III-N structure, with a recess formed through the insulator layer in a gate region of the transistor, with the gate electrode at least partially in the recess. The transistor further includes a field plate having a portion between the gate electrode and the drain contact, the field plate being electrically connected to the source contact. The gate electrode includes an extending portion that is outside the recess and extends towards the drain contact. The separation between the conductive channel and the extending portion of the gate electrode is greater than the separation between the conductive channel and the portion of the field plate that is between the gate electrode and the drain contact.
1. An enhancement-mode transistor, comprising:
a III-N structure including a conductive channel therein;
a source contact and a drain contact, the source and drain contacts electrically contacting the conductive channel;
a gate electrode positioned between the source and drain contacts;
an insulator layer over the III-N structure, wherein a first recess is formed through the insulator layer in a gate region of the III-N enhancement-mode transistor, the first recess comprising a first bottom surface, and wherein the gate electrode is at least partially in the first recess;
an electrode defining layer having a thickness, the electrode defining layer being over the insulator layer, wherein a second recess is formed through a portion of the electrode defining layer, the second recess comprising a second bottom surface, wherein the first bottom surface of the first recess has a first edge and a second edge, the first edge being between the source contact and the second edge, and wherein the second bottom surface of the second recess has a third edge and a fourth edge, the third edge being between the source contact and the fourth edge; and
a field plate having a portion that is in the second recess, the field plate being electrically connected to the source contact, wherein the third edge of the second bottom surface is between the second edge of the first bottom surface and the drain contact.
2. The transistor of claim 1 , wherein the second recess extends through the entire thickness of the electrode defining layer.
3. The transistor of claim 1 , wherein the electrode defining layer is at least partially over the gate electrode.
4. The transistor of claim 1 , further comprising a gate insulator layer in the first recess between the gate electrode and the III-N structure.
5. The transistor of claim 4 , wherein a portion of the gate insulator layer is over the insulator layer, and the gate electrode extends over the portion of the gate insulator layer.
6. The transistor of claim 1 , further comprising an etch stop layer between the insulator layer and the electrode defining layer.
7. The transistor of claim 6 , wherein the etch stop layer is at least partially over the gate electrode.
8. The transistor of claim 6 , wherein the second recess extends through the etch stop layer.
9. The transistor of claim 8 , wherein the field plate contacts the insulator layer in the second recess.
10. The transistor of claim 8 , wherein the field plate contacts an upper surface of the insulator layer in the second recess.
11. The transistor of claim 1 , wherein the first recess extends into the III-N structure.
12. The transistor of claim 1 , wherein a width of the second recess at the top of the second recess is greater than a width of the second recess at the bottom of the second recess.
13. A method of forming an enhancement-mode transistor, comprising:
providing a III-N structure including a conductive channel therein;
forming a source contact and a drain contact, the source and drain contacts electrically contacting the conductive channel;
forming a gate electrode between the source and drain contacts;
providing an insulator layer over the III-N structure;
forming a first recess through the insulator layer in a gate region of the III-N enhancement-mode transistor, the first recess comprising a first bottom surface, wherein the gate electrode is formed at least partially in the first recess;
forming an electrode defining layer having a thickness, the electrode defining layer being over the insulator layer;
forming a second recess through a portion of the electrode defining layer, the second recess comprising a second bottom surface; wherein
the first bottom surface of the first recess has a first edge and a second edge, the first edge being between the source contact and the second edge;
the second bottom surface of the second recess has a third edge and a fourth edge, the third edge being between the source contact and the fourth edge; and
forming a field plate having a portion that is in the second recess, the field plate being electrically connected to the source contact, wherein the third edge of the second bottom surface is between the second edge of the first bottom surface and the drain contact.
14. The method of claim 13 , wherein the second recess extends through the entire thickness of the electrode defining layer.
15. The method of claim 13 , wherein the electrode defining layer is formed at least partially over the gate electrode.
16. The method of claim 13 , further comprising forming a gate insulator layer in the first recess between the gate electrode and the III-N structure.
17. The method of claim 16 , wherein a portion of the gate insulator layer is formed over the insulator layer, and the gate electrode extends over the portion of the gate insulator layer.
18. The method of claim 13 , wherein the field plate contacts the insulator layer in the second recess.
19. The method of claim 13 , wherein the first recess extends into the III-N structure.
20. An enhancement-mode transistor, comprising:
a III-N structure including a conductive channel therein;
a source contact and a drain contact, the source and drain contacts electrically contacting the conductive channel;
a gate electrode positioned between the source and drain contacts;
an insulator layer over the III-N structure, wherein a first recess is formed through the insulator layer in a gate region of the III-N enhancement-mode transistor, the first recess comprising a first bottom surface, and wherein the gate electrode is at least partially in the first recess; and
an electrode defining layer having a thickness, the electrode defining layer being over the insulator layer, wherein a second recess is formed through a portion of the electrode defining layer, the second recess extending through the entire thickness of the electrode defining layer and comprising a second bottom surface;
wherein the first bottom surface of the first recess has a first edge and a second edge, the first edge being between the source contact and the second edge;
wherein the second bottom surface of the second recess has a third edge and a fourth edge, the third edge being between the source contact and the fourth edge;
wherein the source contact includes a field plate having a portion that is in the second recess; and
wherein the third edge of the second bottom surface is between the second edge of the first bottom surface and the drain contact.
21. The transistor of claim 20 , further comprising a gate insulator layer in the first recess between the gate electrode and the III-N structure.
22. The transistor of claim 21 , wherein a portion of the gate insulator layer is over the insulator layer, and the gate electrode extends over the portion of the gate insulator layer.
23. The transistor of claim 22 , wherein the field plate contacts an upper surface of the insulator layer in the second recess.
24. A method of forming an enhancement-mode transistor, comprising:
providing a III-N structure including a conductive channel therein;
forming a source contact and a drain contact, the source and drain contacts electrically contacting the conductive channel;
forming a gate electrode between the source and drain contacts;
providing an insulator layer over the structure;
forming a first recess through the insulator layer in a gate region of the III-N enhancement-mode transistor, the first recess comprising a first bottom surface, wherein the gate electrode is formed at least partially in the first recess;
forming an electrode defining layer having a thickness, the electrode defining layer being over the insulator layer; and
forming a second recess through a portion of the electrode defining layer, the second recess extending through the entire thickness of the electrode defining layer and comprising a second bottom surface;
wherein the first bottom surface of the first recess has a first edge and a second edge, the first edge being between the source contact and the fourth edge;
wherein the second bottom surface of the second recess has a third edge and a fourth edge, the third edge being between the source contact and the fourth edge; and
wherein the source contact includes a field plate having a portion that is in the second recess; and
wherein the third edge of the second bottom surface is between the second edge of the first bottom surface and the drain contact.
25. The method of claim 24 , further comprising forming a gate insulator layer in the first recess between the gate electrode and the III-N structure.
26. The method of claim 25 , wherein a portion of the gate insulator layer is over the insulator layer, and the gate electrode extends over the portion of the gate insulator layer.
27. The method of claim 26 , wherein the field plate contacts an upper surface of the insulator layer in the second recess.