Information processing device and method of driving information processing device
An information processing device, including a resistive analog neuromorphic device element having a pair of electrodes and an oxide layer provided between the pair of electrodes, and a parallel circuit having a low resistance component and a capacitance component. The parallel circuit and the resistive analog neuromorphic device element are connected in series.
1. An information processing device, comprising:
a first resistive analog neuromorphic device element, having:
a pair of electrodes, and
an oxide layer provided between the pair of electrodes, the oxide layer including a plurality of stacked layers of differing resistivities; and
a second resistive analog neuromorphic device element, having:
a low resistance component, and
a capacitance component, wherein
the first and second resistive analog neuromorphic device elements are connected in series to form a device element having a resistance value that is variable.
2. The information processing device according to claim 1 , wherein
the pair of electrodes in the first resistive analog neuromorphic device element includes an upper electrode and a lower electrode,
the second resistive analog neuromorphic device element includes an upper electrode, a lower electrode and an oxide layer provided therebetween,
the upper electrode, the lower electrode, and the oxide layer in the second resistive analog neuromorphic device element configuring a single resistive analog neuromorphic device element in which the low resistance component and the capacitance component are connected in parallel, and
the lower electrodes of the first and second resistive analog neuromorphic device elements are connected, so as to form a circuit system from the upper electrode of the first resistive analog neuromorphic device element to the upper electrode of the second resistive analog neuromorphic device element.
3. The information processing device according to claim 1 , wherein
a resistivity of one of the plurality of stacked layers is less than 1000 mOhm cm, and
a resistivity of another of the plurality of stacked layers is at least 1000 mOhm cm.
4. The information processing device according to claim 1 , further comprising:
a plurality of resistive analog neuromorphic device elements, including the first and second resistive analog neuromorphic device elements, that are provided at different planar positions on a substrate, and
each of the plurality of resistive analog neuromorphic device elements has a lower electrode, and a pair of the lower electrodes that are adjacent to each other are connected to each other.
5. The information processing device according to claim 2 , further comprising a substrate, wherein
sequentially from the substrate, the lower electrode, the oxide layer, an intermediate electrode, the oxide layer, and the upper electrode are stacked at a single planar position on the substrate, as the first resistive analog neuromorphic device element.
6. A method of driving an information processing device having a first resistive analog neuromorphic device element that has a pair of electrodes and an oxide layer provided between the pair of electrodes, the oxide layer including a plurality of stacked layers of differing resistivities, the method comprising:
connecting a second resistive analog neuromorphic device element in series to the first resistive analog neuromorphic device element, the second resistive analog neuromorphic device element having a low resistance component and a capacitance component; and
applying a voltage to thereby provide a variable resistance value.