Sequential garbage collection
An example apparatus for sequential garbage collection can include a memory device including a plurality of memory blocks associated with a plurality of logical block addresses (LBAs). The example apparatus can include a controller coupled to the memory device. The controller can be configured to monitor a quantity of read operations and a quantity of write operations associated with a plurality of command sizes performed on a portion of the plurality of memory blocks. The controller can be configured to monitor a quantity of read operations and a quantity of write operations associated with a particular LBA. The controller can be configured to determine a type of garbage collection operation to perform based on the monitoring.
1. An apparatus, comprising:
a memory device comprising a plurality of memory blocks associated with a plurality of logical block addresses (LBAs);
a controller coupled to the memory device and configured to:
monitor a quantity of read operations and a quantity of write operations associated with a plurality of command sizes, wherein the quantity of read operations and the quantity of write operations are performed on a portion of the plurality of memory blocks; and
determine a type of garbage collection operation to perform based on the monitoring.
2. The apparatus of claim 1 , wherein the controller is configured to, in response to a ratio of the quantity of read operations to the quantity of write operations being above a threshold ratio, perform a sequential garbage collection operation.
3. The apparatus of claim 1 , wherein the controller is configured to, in response to a ratio of the quantity of read operations to the quantity of write operations being below a threshold ratio, perform a non-sequential garbage collection operation.
4. The apparatus of claim 1 , wherein at least one of the plurality of command sizes is one of a 4 kilobyte (KB) read operation, a 16 KB read operation, a 128 KB read operation.
5. The apparatus of claim 1 , wherein at least one of the plurality of command sizes is one of a 4 kilobyte (KB) write operation, a 16 KB write operation, a 128 KB write operation.
6. The apparatus of claim 1 , wherein the controller is configured to clear a counter that maintains the quantity of read operations and the quantity of write operations at particular time intervals.
7. The apparatus of claim 1 , wherein the controller is configured to determine a total quantity of bytes written.
8. The apparatus of claim 7 , wherein the controller is configured to determine a ratio of the total quantity of bytes written over an allowed total bytes to be written and adjust a threshold that triggers the type of garbage collection operation.
9. The apparatus of claim 1 , wherein the controller is configured to compare an age of a memory device to an allowed age of the memory device to determine a memory device utilization value.
10. The apparatus of claim 9 , wherein the controller is configured to perform the type of garbage collection operation based on the memory device utilization value.
11. A method, comprising:
monitoring a quantity of read operations and a quantity of write operations that are associated with corresponding command sizes, wherein the quantity of read operations and the quantity of write operations are performed on a first portion of a plurality of memory blocks of a memory device;
monitoring a quantity of logical block addresses (LBAs) that are read from and a quantity of LBAs that are written to, wherein the quantity of LBAs are read from and the quantity of LBAs written to a second portion of the plurality of memory blocks of the memory device;
determining a ratio of the quantity of read operations and the quantity of write operations; and
determining a type of garbage collection operation to perform based on the ratio;
wherein, in response to the ratio being above a threshold ratio, the type of garbage collection operation is a sequential garbage collection operation.
12. The method of claim 11 , wherein, in response to the ratio being below the threshold ratio, the type of garbage collection operation is a non-sequential garbage collection operation.
13. The method of claim 11 , further comprising determining an LBA ratio of the quantity of LBAs read from to the quantity of LBAs written to.
14. The method of claim 13 , wherein, in response to the LBA ratio being above a threshold LBA ratio, the type of garbage collection operation is a sequential garbage collection operation.
15. The method of claim 13 , wherein, in response to the LBA ratio being below a threshold LBA ratio, the type of garbage collection operation is a non-sequential garbage collection operation.
16. The method of claim 11 , further comprising:
comparing an actual total bytes written (TBW) of the memory device to an allowed quantity of TBW of the memory device to determine a TBW ratio; and
comparing an actual age of the memory device to an allowed total age of the memory device to determine an age ratio.
17. The method of claim 16 , further comprising:
in response to the TBW ratio being above a threshold TBW ratio or the age ratio being above a threshold age ratio, performing a non-sequential garbage collection operation; and
in response to the TBW ratio being below a threshold TBW ratio or the age ratio being below a threshold age ratio, performing a sequential garbage collection operation.
18. An apparatus, comprising:
a memory device comprising a plurality of memory blocks associated with a plurality of logical block addresses (LBAs);
a controller coupled to the memory device and configured to:
monitor a quantity of read operations and a quantity of write operations that are associated with corresponding command sizes, wherein:
the quantity of read operations and the quantity of write operations are performed on a first portion of a plurality of memory blocks of a memory device; and
a read counter indicates the quantity of read operations and a write counter indicates the quantity of write operations;
monitor a quantity of logical block addresses (LBA) that are read from and a quantity of LBAs that are written to, wherein:
the quantity of LBAs are read from a second portion of the plurality of memory blocks of the memory device and the quantity of LBAs are written to the second portion; and
an LBA read counter value indicates the quantity of LBA that are read from and an LBA write counter value indicates the quantity of LBAS written to;
determine:
a read/write ratio of the quantity of read operations from the read counter value to the quantity of write operations from the write counter value; and
an LBA ratio of the LBA read counter value to the LBA write counter value; and
determine a type of garbage collection operation to perform based on the read/write ratio and the LBA ratio.
19. The apparatus of claim 18 , wherein, in response to the read/write ratio or the LBA ratio being above a threshold read/write ratio or above a threshold LBA ratio, respectively, the type of garbage collection operation is a sequential garbage collection operation.
20. The apparatus of claim 18 , wherein, in response to the read/write ratio or the LBA ratio being below a threshold read/write ratio or below a threshold LBA ratio, respectively, the type of garbage collection operation is a non-sequential garbage collection operation.