Light-emitting device and manufacturing method thereof
A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.
1. A light-emitting device, comprising:
a substrate, comprising an upper surface;
a first light-emitting unit and a second light-emitting unit adjacent to each other, formed on the upper surface, and wherein each of the first light-emitting unit and the second light-emitting unit comprises a lower semiconductor portion and an upper semiconductor portion;
wherein the lower semiconductor portion of the first light-emitting unit comprises:
a first upper surface not covered by the upper semiconductor portion of the first light-emitting unit;
a first side wall not facing the second light-emitting unit and adjacent to a periphery of the light-emitting device; and
a second side wall; and
a conductive structure, formed on the second side wall and electrically connecting the first light-emitting unit and the second light-emitting unit;
wherein the first side wall connects the first upper surface and the upper surface of the substrate, and an obtuse angle is formed between the first side wall and the upper surface of the substrate and an acute angle is formed between the second side wall and the upper surface of the substrate.
2. The light-emitting device according to claim 1 , wherein the first side wall comprises a first sub-side wall connected to the first upper surface and a second sub-side wall located between the first sub-side wall and the upper surface of the substrate; and
wherein the obtuse angle is formed between the second sub-side wall and the upper surface of the substrate and another obtuse angle is formed between the first sub-side wall and the first upper surface.
3. The light-emitting device according to claim 1 , further comprising an insulator between the conductive structure and the second side wall.
4. The light-emitting device according to claim 3 , wherein the substrate comprises a plurality of patterned structures on the upper surface, and the insulator covers a part of the plurality of patterned structures; and wherein the patterned structures covered by the insulator and the patterned structures not covered by the insulator have different sizes and/or different shapes.
5. The light-emitting device according to claim 3 , wherein the insulator comprises a middle portion on the second side wall and an extending portion on the upper semiconductor portion of the first light-emitting unit, and a width of the middle portion is greater than that of the extending portion.
6. The light-emitting device according to claim 1 , wherein the first side wall is adjacent to the second side wall; and
wherein in a side view, the first side wall has a parallelogram-like shape or a parallelogram shape with a pair of diagonal angles having a first acute angle and a second acute angle.
7. The light-emitting device according to claim 6 , wherein a difference between the first acute angle and the second acute angle is smaller than 40 degrees.
8. The light-emitting device according to claim 1 , wherein the obtuse angle is between 100 and 160 degrees.
9. The light-emitting device according to claim 1 , wherein the acute angle is between 20 and 80 degrees.
10. The light-emitting device according to claim 1 , wherein in a top view, the first light-emitting unit comprises a first edge, a second edge, a third edge and a fourth edge, wherein the first edge is opposite to the second edge and the third edge is opposite to the fourth edge;
wherein the first side wall is located on the first edge and the second side wall is located on the second edge; and
wherein the lower semiconductor portion of the first light-emitting unit further comprises a third side wall located on the second edge and another obtuse angle is formed between the third side wall and the upper surface of the substrate.
11. The light-emitting device according to claim 10 , wherein an upper edge of the second side wall is closer to the second light-emitting unit than an upper edge of the third side wall.
12. The light-emitting device according to claim 10 , wherein a lower edge of the second side wall is closer to the second light-emitting unit than a lower edge of the third side wall.
13. The light-emitting device according to claim 10 , wherein the lower semiconductor portion of the first light-emitting unit further comprises a clamped surface between the second side wall and the third side wall, and the clamped surface substantially has a triangular shape with an edge connecting the upper surface.
14. The light-emitting device according to claim 1 , wherein in a top view, the first light-emitting unit comprises a first edge, a second edge, a third edge and a fourth edge;
wherein the first edge is opposite to the second edge and the third edge is opposite to the fourth edge;
wherein the first side wall is located on the first edge and the second side wall is located on the second edge; and
wherein a length of the second side wall extending on the second edge is equal to a length of the second edge.
15. The light-emitting device according to claim 1 , wherein the conductive structure comprises a connection electrode on the second side wall and an extending electrode on the upper semiconductor portion of the first light-emitting unit.