Solid-state imaging device, drive method thereof and electronic apparatus
A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.
1. A light detecting device, comprising:
a photoelectric converter;
a transfer transistor electrically connected to the photoelectric converter; and
a floating diffusion electrically connected to the transfer transistor,
wherein the transfer transistor is disposed on a first surface of a substrate which is opposite to a second surface of the substrate, the second surface being a light incident surface of the substrate,
wherein the transfer transistor comprises a planar gate electrode disposed on the first surface of the substrate and first and second vertical gate electrodes disposed in the substrate, and
wherein the floating diffusion overlaps the photoelectric converter in a plan view.
2. The light detecting device according to claim 1 , further comprising a gate insulating film formed on the first surface of the substrate, wherein the planar gate electrode is formed on a first side of the gate insulating film.
3. The light detecting device according to claim 2 , wherein the floating diffusion is formed on a second side of the gate insulating film opposite the first side of the gate insulating film.
4. The light detecting device according to claim 3 , wherein the floating diffusion is provided unobstructed between the second side of the gate insulating film and the second surface of the substrate.
5. The light detecting device according to claim 4 , wherein the floating diffusion is provided in an isolation region of the substrate.
6. The light detecting device according to claim 3 , wherein the floating diffusion is provided between the second side of the gate insulating film and the photoelectric converter.
7. The light detecting device according to claim 6 , wherein the floating diffusion is provided in a photoelectric converter region of the substrate.
8. An electronic apparatus, comprising:
an optical lens system;
a light detecting device including:
a photoelectric converter;
a transfer transistor electrically connected to the photoelectric converter; and
a floating diffusion electrically connected to the transfer transistor,
wherein the transfer transistor is disposed on a first surface of a substrate which is opposite to a second surface of the substrate, the second surface being a light incident surface of the substrate,
wherein the transfer transistor comprises a planar gate electrode disposed on the first surface of the substrate and first and second vertical gate electrodes disposed in the substrate, and
wherein the floating diffusion overlaps the photoelectric converter in a plan view; and
a signal processing device which processes output signals from the light detecting device.
9. The electronic apparatus according to claim 8 , further comprising a gate insulating film formed on the first surface of the substrate, wherein the planar gate electrode is formed on a first side of the gate insulating film.
10. The electronic apparatus according to claim 9 , wherein the floating diffusion is formed on a second side of the gate insulating film opposite the first side of the gate insulating film.
11. The electronic apparatus according to claim 10 , wherein the floating diffusion is provided unobstructed between the second side of the gate insulating film and the second surface of the substrate.
12. The electronic apparatus according to claim 11 , wherein the floating diffusion is provided in an isolation region of the substrate.
13. The electronic apparatus according to claim 10 , wherein the floating diffusion is provided between the second side of the gate insulating film and the photoelectric converter.
14. The electronic apparatus according to claim 13 , wherein the floating diffusion is provided in a photoelectric converter region of the substrate.
15. A light detecting device, comprising:
a photoelectric converter;
a transfer transistor electrically connected to the photoelectric converter; and
a floating diffusion electrically connected to the transfer transistor,
wherein the transfer transistor is disposed on a first surface of a substrate which is opposite to a second surface of the substrate, the second surface being a light incident surface of the substrate,
wherein the transfer transistor comprises a planar gate electrode disposed on the first surface of the substrate and first and second vertical gate electrodes disposed in the substrate, and
wherein the floating diffusion overlaps the photoelectric converter at a corner portion of the photoelectric converter in a plan view.
16. The light detecting device according to claim 15 , further comprising a gate insulating film formed on the first surface of the substrate, wherein the planar gate electrode is formed on a first side of the gate insulating film.
17. The light detecting device according to claim 16 , wherein the floating diffusion is formed on a second side of the gate insulating film opposite the first side of the gate insulating film.
18. The light detecting device according to claim 17 , wherein the floating diffusion is provided unobstructed between the second side of the gate insulating film and the second surface of the substrate.
19. The light detecting device according to claim 18 , wherein the floating diffusion is provided in an isolation region of the substrate.
20. The light detecting device according to claim 17 , wherein the floating diffusion is provided between the second side of the gate insulating film and the photoelectric converter.