IP Library › Granted Patent US 12,527,150
Granted Patent B2
US 12,527,150 · App. 17/905,256 · Granted Jan 13, 2026

Quantum dot substrate including nanoparticles, method for preparing the same and display device thereof

Inventors: Zhiqing Shi (Guangdong, CN); Jinyang Zhao (Guangdong, CN); Lixuan Chen (Guangdong, CN)
Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
H10K50/115C09K11/025H10K71/12B82Y20/00B82Y40/00H10K59/12H10K2102/311
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Quick Facts
Patent No.
US 12,527,150
App. No.
17/905,256
Granted
Jan 13, 2026
Kind
B2
Abstract

A quantum dot substrate, a method for preparing the same, and a display device thereof. The quantum dot substrate includes a quantum dot film. The quantum dot film includes a plurality of quantum dots and a plurality of first nanoparticles dispersed among the plurality of quantum dots. A particle size of the plurality of first nanoparticles ranges from 2 nanometers (nm) to 50 nm. In the present application, a self-absorption phenomenon of the plurality of quantum dots is reduced and luminous efficiency of the plurality of quantum dots is enhanced through arranging the plurality of first nanoparticles with particle sizes ranging from 2 nm to 50 nm among the plurality of quantum dots.

Claims (17)

1 . A quantum dot substrate comprising a quantum dot film, wherein the quantum dot film comprises a plurality of quantum dots, a plurality of first nanoparticles and a plurality of second nanoparticles dispersed among the plurality of quantum dots, and a particle size of the plurality of first nanoparticles ranges from 2 nanometers (nm) to 50 nm, and

wherein a ratio of a mass percentage of the plurality of first nanoparticles and the plurality of second nanoparticles in the quantum dot film to a mass percentage of the plurality of quantum dots in the quantum dot film ranges from 1:50 to 1:10.

2 . The quantum dot substrate according to claim 1 , wherein the particle size of the plurality of first nanoparticles ranges from 10 nm to 20 nm.

3 . The quantum dot substrate according to claim 1 , wherein a particle size of the plurality of second nanoparticles is greater than the particle size of the plurality of first nanoparticles.

4 . The quantum dot substrate according to claim 3 , wherein the particle size of the plurality of second nanoparticles ranges from 300 nm to 500 nm.

5 . The quantum dot substrate according to claim 3 , wherein the plurality of first nanoparticles and the plurality of second nanoparticles comprise same surface modification ligands.

6 . The quantum dot substrate according to claim 1 , wherein a mass percentage of the plurality of first nanoparticles in the quantum dot film is greater than a mass percentage of the plurality of second nanoparticles in the quantum dot film.

7 . The quantum dot substrate according to claim 6 , wherein a ratio of the mass percentage of the plurality of first nanoparticles in the quantum dot film to the mass percentage of the plurality of second nanoparticles in the quantum dot film ranges from 5:1 to 20:1.

8 . The quantum dot substrate according to claim 1 , wherein the plurality of first nanoparticles comprise one or more of silicon dioxide, titanium oxide, zirconium oxide, tungsten oxide, zinc oxide, or barium titanate.

9 . The quantum dot substrate according to claim 1 , wherein the quantum dot substrate further comprises a base and a conductive layer disposed on the base, and the quantum dot film is disposed on a side of the conductive layer away from the base.

10 . The quantum dot substrate according to claim 9 , wherein the conductive layer comprises a first conductive electrode and a second conductive electrode, a pattern of the first conductive electrode and a pattern of the second conductive electrode are matched to each other, the quantum dot film covers one of the first conductive electrode and the second conductive electrode, and a pattern of the quantum dot film is same as one of the pattern of the first conductive electrode and the pattern of the second conductive electrode.

11 . A display device comprising the quantum dot substrate as claimed in claim 1 .

12 . The display device according to claim 11 , wherein the particle size of the plurality of first nanoparticles ranges from 10 nm to 20 nm.

13 . The display device according to claim 11 , wherein the particle size of the plurality of second nanoparticles ranges from 300 nm to 500 nm.

14 . The display device according to claim 13 , wherein the plurality of first nanoparticles and the plurality of second nanoparticles comprise same surface modification ligands.

15 . The quantum dot substrate according to claim 5 , wherein the surface modification ligands are derived from a surface modifier, and a mass of the surface modifier is 20% to 60% of a mass of the plurality of first nanoparticles.

16 . The quantum dot substrate according to claim 15 , wherein surfaces of the plurality of first nanoparticles and/or the plurality of second nanoparticles have hydroxyl groups, and the surface modifier comprises carboxyl-containing or amino-containing polyethylene glycol, polyethylene adipate, or silane coupling agents.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 29, 2022
From: SHI, ZHIQING; ZHAO, JINYANG; CHEN, LIXUAN
To: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
Reel/Frame 061355/0297 →
Priority Claims (1)
CN 202210812585.1 · Jul 11, 2022 · national
Continuity (1)
Related Publication 20240224558A1 · Jul 4, 2024
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