Reference bits test and repair using memory built-in self-test

1. A memory-testing circuit in a circuit configured to perform a test of a memory in the circuit, the memory comprising: data bit columns configured to store data bits, reference bit columns configured to store reference bits, and column association circuitry configured to associate one or more of the reference bit columns with a data bit column in the data bit columns, the memory-testing circuit comprising:

a test controller;

association adjustment circuitry coupled to the column association circuitry and the test controller, the association adjustment circuitry configurable by the test controller to associate another one or more of the reference bit columns or one or more of the data bit columns with the data bit column in the data bit columns; and

repair circuitry configured to use extra reference bit columns to replace defective reference bit columns detected by the memory-testing circuit, the repair circuitry comprises:

a register coupled to the association adjustment circuitry and configured to load repair information for one or more defective reference columns,

an address comparison device configured to compare a data bit column address for a read operation with an address or addresses for data bit columns associated with the one or more defective reference bit columns, and

a multiplexing device controlled by an output of the address comparison device and configured to select an output signal from between a signal from the register and a signal from the column association circuitry,

wherein the test of the memory comprises:

performing one or more read operations based on one or more of the reference bit columns associated by the column association circuitry to generate one or more outputs,

comparing the one or more outputs with corresponding good-machine values to determine whether any of the one or more outputs is incorrect,

if at least one of the one or more outputs is incorrect, repeating at least one of the one or more read operations that generates the at least one of the one or more outputs based on another one or more of the reference bit columns or one or more of the data bit columns which are associated by the association adjustment circuitry to generate at least one second output, and

comparing the at least one second output with the corresponding good machine value to determine whether the one or more of the reference bit columns associated by the column association circuitry have a defect.

2. The memory-testing circuit recited in claim 1 , wherein the column association circuitry is a decoder configured to generate a signal for selecting one or more of the reference bit columns based on an address signal for a read operation.

3. The circuit recited in claim 1 , wherein the memory is a magnetoresistive random-access memory (MRAM) and a read operation on the memory comprises comparing an output from a data bit column with outputs from two reference bit columns (storing “0” and “1”, respectively) associated with the data bit column, respectively or comparing an output from a data bit column with one half of a sum of outputs from two reference bit columns (storing “0” and “1”, respectively) associated with the data bit column.

4. The circuit recited in claim 1 , wherein the association adjustment circuitry comprises multiplexing circuitry configured to select between an output signal of the column association circuitry and a signal directly from or produced based on a signal from the test controller.

5. The circuit recited in claim 4 , wherein the device is configured to add one bit to addresses for the one or more of the reference bit columns associated by the column association circuitry to generate addresses for the another one or more of the reference bit columns.

6. One or more computer-readable media storing computer-executable instructions for causing a computer to perform a method, the method comprising:

creating a memory-testing circuit in a circuit design, the circuit design comprising a memory, the memory-testing circuit configured to perform a test of the memory, the memory comprising: data bit columns configured to store data bits, reference bit columns configured to store reference bits, and column association circuitry configured to associate one or more of the reference bit columns with a data bit column in the data bit columns, the memory-testing circuit comprising:

a test controller;

association adjustment circuitry coupled to the column association circuitry and the test controller, the association adjustment circuitry configurable by the test controller to associate another one or more of the reference bit columns or one or more of the data bit columns with the data bit column in the data bit columns; and

repair circuitry configured to use extra reference bit columns to replace defective reference bit columns detected by the memory-testing circuit, the repair circuitry comprises:

a register coupled to the association adjustment circuitry and configured to load repair information for one or more defective reference columns,

an address comparison device configured to compare a data bit column address for a read operation with an address or addresses for data bit columns associated with the one or more defective reference bit columns, and

a multiplexing device controlled by an output of the address comparison device and configured to select an output signal from between a signal from the register and a signal from the column association circuitry,

wherein the test of the memory comprises:

performing one or more read operations based on one or more of the reference bit columns associated by the column association circuitry to generate one or more outputs,

comparing the one or more outputs with corresponding good-machine values to determine whether any of the one or more outputs is incorrect,

if at least one of the one or more outputs is incorrect, repeating at least one of the one or more read operations that generates the at least one of the one or more outputs based on another one or more of the reference bit columns or one or more of the data bit columns which are associated by the association adjustment circuitry to generate at least one second output, and

comparing the at least one second output with the corresponding good machine value to determine whether the one or more of the reference bit columns associated by the column association circuitry have a defect.

7. The one or more computer-readable media recited in claim 6 , wherein the column association circuitry is a decoder configured to generate a signal for selecting one or more of the reference bit columns based on an address signal for a read operation.

8. The one or more computer-readable media recited in claim 6 , wherein the memory is a magnetoresistive random-access memory (MRAM) and a read operation on the memory comprises comparing an output from a data bit column with outputs from two reference bit columns (storing “0” and “1”, respectively) associated with the data bit column, respectively or comparing an output from a data bit column with one half of a sum of outputs from two reference bit columns (storing “0” and “1”, respectively) associated with the data bit column.

9. The one or more computer-readable media recited in claim 6 , wherein the association adjustment circuitry comprises multiplexing circuitry configured to select between an output signal of the column association circuitry and a signal directly from or produced based on a signal from the test controller.

10. The one or more computer-readable media recited in claim 9 , wherein the device is configured to add one bit to addresses for the one or more of the reference bit columns associated by the column association circuitry to generate addresses for the another one or more of the reference bit columns.