Quantum processing element and system
The present disclosure provides a quantum processing device comprising: one or more functional nanowires, each functional nanowire connected to at least one of a source and a drain; a sensing nanowire spaced from the one or more functional nanowires and connected to at least one of a source and a drain; one or more gate electrodes capacitively coupled with each of the one or more functional nanowires; one or more electrodes capacitively coupled with the sensing nanowire; and a floating coupler positioned between and electrostatically coupling the one or more functional nanowires and the sensing nanowire; and a controller connected to the one or more gates of the sensing nanowire and the one or more gates of the one or more functional nanowires.
1 . A quantum processing system device comprising:
one or more functional nanowires, each functional nanowire connected to at least one of a first source and a first drain;
a sensing nanowire spaced from the one or more functional nanowires and connected to at least one of a second source and a second drain;
one or more first gate electrodes capacitively coupled with each of the one or more functional nanowires;
one or more second gate electrodes capacitively coupled with the sensing nanowire; and
one or more floating electrostatic coupling gates positioned between and electrostatically coupling the one or more functional nanowires and the sensing nanowire, the one or more floating electrostatic coupling gates being partially overlapped with each of the one or more functional nanowires and the sensing nanowire; and
a controller connected to the one or more second gate electrodes of the sensing nanowire and the one or more first gate electrodes of the one or more functional nanowires;
wherein the controller is configured to apply biasing voltage to bias the one or more second gate electrodes of the sensing nanowire and the one or more first gate electrodes of the one or more functional nanowires such that a sensing quantum dot is formed in the sensing nanowire and one or more functional quantum dots are formed in the one or more functional nanowires and the sensing quantum dot senses changes in electric charges in each of the one or more functional quantum dots.
2 . The quantum processing system of claim 1 , wherein the quantum processing system includes one functional nanowire and the functional nanowire includes two second gate electrodes.
3 . The quantum processing system of claim 2 , wherein the one or more floating electrostatic coupling gates comprises two floating electrostatic coupling gates.
4 . The quantum processing system of claim 1 , wherein during operation of the quantum processing system, a potential difference between the sensing nanowire and the one or more functional nanowires forms one or more functional quantum dots in the one or more functional nanowires under the one or more floating electrostatic coupling.
5 . The quantum processing system of claim 4 , wherein to form the one or more functional quantum dots under the one or more floating electrostatic coupling gates in the one or more functional nanowires, the sensing nanowire and the one or more functional nanowires are biased in voltage relative to each other.
6 . The quantum processing system of claim 1 , wherein the sensing nanowire includes two second gate electrodes and the two second gate electrodes are biased to a same voltage.
7 . The quantum processing system of claim 1 , wherein the quantum processing system includes one functional nanowire and the one functional nanowire includes multiple first gate electrodes.
8 . The quantum processing system of claim 7 , wherein at one end, the one or more floating electrostatic coupling gates are coupled with the sensing nanowire and at a second end the one or more floating electrostatic coupling gates include multiple branches, where each branch is coupled with the one functional nanowire.
9 . The quantum processing system of claim 8 , wherein a potential difference between the sensing nanowire and the one functional nanowire to form functional quantum dots under the multiple branches branch gates of the one or more floating electrostatic coupling gates.
10 . The quantum processing system of claim 1 , wherein the quantum processing system includes multiple functional nanowires and each functional nanowire includes two or more first gate electrodes, wherein the one or more floating electrostatic coupling gates each include a trunk section and multiple branch sections, wherein each branch section comprises one or more leaf gates, wherein an end of the trunk section is coupled with the sensing nanowire, and wherein the one or more leaf gates are coupled with the multiple functional nanowires.
11 . The quantum processing system of claim 10 , wherein a potential difference between the sensing nanowire and each functional nanowire forms functional quantum dots under one or more of the one or more leaf gates of the one or more floating electrostatic coupling gates.
12 . A method for controlling operation of a quantum processing system, the quantum processing system comprising one or more functional nanowires, a sensing nanowire spaced from the one or more functional nanowires, one or more first gate electrodes capacitively coupled with each of the one or more functional nanowires and one or more second gate electrodes capacitively coupled with the sensing nanowire, one or more floating electrostatic coupling gates positioned between and electrostatically coupling the one or more functional nanowires and the sensing nanowire, the one or more floating electrostatic coupling gates being partially overlapped with each of the one or more functional nanowires and the sensing nanowire, and a controller connected to the one or more second gate electrodes of the sensing nanowire and the one or more first gate electrodes of the one or more functional nanowires, the method comprising:
at the controller, receiving a current reading from the sensing nanowire;
determining a first biasing voltage to be applied to the one or more second gate electrodes of the sensing nanowire based on the received current reading;
determining a second biasing voltage to be applied to the one or more first gate electrodes of the one or more functional nanowires based on the received current reading;
causing the determined first biasing voltage to be applied to the one or more second gate electrodes of the sensing nanowire; and
causing the determined second biasing voltage to be applied to the one or more first gate electrodes of the one or more functional nanowires;
wherein the first biasing voltage and the second biasing voltage are determined such that a sensing quantum dot is formed in the sensing nanowire, one or more functional quantum dots are formed in the one or more functional nanowires and the sensing quantum dot senses charge transition events in each of the one or more functional quantum dots.
13 . The method of claim 12 , wherein the quantum processing system includes one functional nanowire and the one functional nanowire includes two first gate electrodes and the one or more floating electrostatic coupling gates comprise two floating electrostatic coupling gates.
14 . The method of claim 13 , further comprising:
causing a potential difference between the sensing nanowire and the one functional nanowire to form one or more functional quantum dots in the one functional nanowire under the one or more floating electrostatic coupling gates.
15 . The method of claim 14 , further comprising biasing the sensing nanowire and the one functional nanowire in voltage relative to each other to form the one or more functional quantum dots in the one functional nanowire.
16 . The method of claim 12 , wherein the sensing nanowire includes two second gate electrodes and wherein the method further comprises:
determining and causing a same first biasing voltage to be applied to the two second gate electrodes of the sensing nanowire.
17 . The method of claim 12 , wherein the quantum processing system includes one functional nanowire and the one functional nanowire includes multiple first gate electrodes, wherein one end of each floating electrostatic coupling gate is coupled with the sensing nanowire and an opposite end of each floating electrostatic coupling gate includes multiple branches, and wherein each branch is coupled with the one functional nanowire.
18 . The method of claim 17 , comprising: biasing the sensing nanowire and the one functional nanowire in voltage relative to each other to form functional quantum dots under one or more of the multiple branches of the floating electrostatic coupling gate.
19 . The method of claim 12 , wherein the quantum processing system includes multiple functional nanowires and each functional nanowire includes two or more first gate electrodes, wherein the one or more floating electrostatic coupling gates each include a trunk section and multiple branch sections, wherein each branch section comprises one or more leaf gates, wherein an end of the trunk section is coupled with the sensing nanowire, and wherein the one or more leaf gates are coupled with the multiple functional nanowires.
20 . The method of claim 19 , further comprising:
biasing each functional nanowire in voltage relative to the sensing nanowire to form functional quantum dots under one or more of the one or more leaf gates of the floating electrostatic coupling gate.