IP Library › Granted Patent US 12,470,247
Granted Patent B2
US 12,470,247 · App. 17/916,669 · Granted Nov 11, 2025

Transceiver

Inventors: Dirk Wiegner (Schwaikheim, DE); George Hotopan (Esslingen, DE)
Assignee: NOKIA SOLUTIONS AND NETWORKS OY
H04B1/40H04B1/1615H04B1/163H03F2200/451
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,470,247
App. No.
17/916,669
Granted
Nov 11, 2025
Kind
B2
Abstract

Aspects and embodiments provide a transceiver comprising: a transmit signal path; a receive signal path; bidirectional amplification circuitry reconfigurable for use in both the transmit signal path or receive signal path. The amplification circuitry includes at least one resonant tunnelling diode; and the control circuitry is configured to selectively couple the amplification circuitry into the transmit or receive path of the transceiver in dependence upon whether the transceiver is to operate to transmit or receive a signal. The compact and energy efficient transceiver system in accordance with aspects and embodiments recognises that the physical properties of resonant tunnelling diodes provide a mechanism for simplification of transceiver circuitry and may enable transceiver arrangements which can operate in the high mm-wave and terahertz frequency ranges.

Claims (30)

1 . A transceiver, comprising:

a transmit signal path;

a receive signal path;

bidirectional amplification circuitry reconfigurable for use in both the transmit signal path or receive signal path; said amplification circuitry including at least one resonant tunnelling diode, wherein the amplification circuitry further comprises an adjustable attenuator, and the control circuitry is configured to set attenuation of the attenuator in dependence upon one or more of: network load and converter control; and

control circuitry configured to selectively couple the amplification circuitry into the transmit or receive path of the transceiver in dependence upon whether said transceiver is to operate to transmit or receive a signal, wherein

the control circuitry is configured to adjust a supply voltage associated with the at least one resonant tunnelling diode of the amplification circuitry depending on an operating mode of the transceiver, and

when the transceiver is to operate to transmit a signal, the control circuitry is configured to adjust the supply voltage associated with the at least one resonant tunnelling diode to a value such that the resonant tunnelling diode operates in a negative differential conductance region of an N-shaped current-voltage characteristic associated with the at least one resonant tunnelling diode.

2 . The transceiver of claim 1 , wherein when the transceiver is to operate to receive a signal, the control circuitry is configured to adjust the supply voltage associated with the at least one resonant tunnelling diode to a value such that the resonant tunnelling diode operates in a region of the peak of an N-shaped current voltage characteristic associated with the at least one resonant tunnelling diode.

3 . The transceiver of claim 1 , wherein the control circuitry comprises: a switch and resonant tunnelling diode supply voltage controller and wherein the amplification circuitry is coupled between the switch and an antenna connector.

4 . The transceiver of claim 1 , wherein the control circuitry comprises: a circulator and resonant tunnelling diode supply voltage controller and wherein the amplification circuitry is coupled between the circulator and an antenna connector.

5 . The transceiver of claim 1 , wherein the control circuitry is configured to couple the amplification circuitry into a signal path as a first amplifier in the receive signal path to amplify a radio-frequency received signal.

6 . The transceiver of claim 5 , wherein the transceiver further comprises an additional amplifier and the control circuitry is configured to couple the additional amplifier into the receive path as a second amplifier in the receive signal path.

7 . The transceiver of claim 1 , wherein the control circuitry is configured to couple the amplification circuitry into a signal path as a last amplifier in the transmit signal path to amplify a radio-frequency signal to be transmitted.

8 . The transceiver of claim 1 , wherein the amplification circuitry further comprises one or more of: a band pass filter; a dual band filter.

9 . The transceiver of claim 8 , wherein the control circuitry is further configured to set attenuation of the attenuator in dependence upon operating mode of the transceiver.

10 . The transceiver of claim 1 , configured to operate to receive and transmit a Terahertz frequency signal.

11 . An electronic radio communications device comprising the transceiver of claim 1 .

12 . A transceiver system comprising a plurality of antennas and a plurality of transceivers according to claim 1 , wherein each transceiver of the plurality of transceivers is coupled to at least one antenna of the plurality of antennas.

13 . A method for operating a transceiver, the method comprising:

coupling bidirectional amplification circuitry including at least one resonant tunnelling diode into a receive signal path of the transceiver to amplify a receive signal during a receive operating mode of the transceiver, wherein the amplification circuitry further comprises an adjustable attenuator, and the control circuitry is configured to set attenuation of the attenuator in dependence upon one or more of: network load and converter control; and

coupling the bidirectional amplification circuitry including at least one resonant tunnelling diode into a transmit signal path of the transceiver to amplify a transmit signal during a transmit operating mode of the transceiver, wherein

the control circuitry is configured to adjust a supply voltage associated with the at least one resonant tunnelling diode of the amplification circuitry depending on an operating mode of the transceiver, and

when the transceiver is to operate to transmit a signal, the control circuitry is configured to adjust the supply voltage associated with the at least one resonant tunnelling diode to a value such that the resonant tunnelling diode operates in a negative differential conductance region of an N-shaped current-voltage characteristic associated with the at least one resonant tunnelling diode.

14 . A transceiver, comprising:

a transmit signal path;

a receive signal path;

bidirectional amplification circuitry reconfigurable for use in both the transmit signal path or receive signal path; said amplification circuitry including at least one resonant tunnelling diode, wherein the amplification circuitry further comprises an adjustable attenuator, and the control circuitry is configured to set attenuation of the attenuator in dependence upon one or more of: network load and converter control; and

control circuitry configured to selectively couple the amplification circuitry into the transmit or receive path of the transceiver in dependence upon whether said transceiver is to operate to transmit or receive a signal, wherein

the control circuitry is configured to adjust a supply voltage associated with the at least one resonant tunnelling diode of the amplification circuitry depending on an operating mode of the transceiver, and

when the transceiver is to operate to receive a signal, the control circuitry is configured to adjust the supply voltage associated with the at least one resonant tunnelling diode to a value such that the resonant tunnelling diode operates in a region of the peak of an N-shaped current-voltage characteristic associated with the at least one resonant tunnelling diode.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 3, 2022
From: WIEGNER, DIRK; HOTOPAN, GEORGE-ROBERTO
To: NOKIA SOLUTIONS AND NETWORKS OY
Reel/Frame 061289/0264 →
Priority Claims (1)
FI 20205339 · Apr 2, 2020 · national
Continuity (1)
Related Publication 20230163801A1 · May 25, 2023
References Cited (18)
US 5590412A · Sawai · 1996 [cited by examiner]
US 20070071128A1 · Meir · 2007 [cited by examiner]
US 20100309827A1 · Choi · 2010 [cited by examiner]
US 20140098845A1 · Egard · 2014 [cited by examiner]
US 20180226932A1 · Beaudin · 2018 [cited by examiner]
CN 101447763A · 2009 [cited by applicant]
CN 102204110A · 2011 [cited by applicant]
EP 1700375A1 · 2006 [cited by applicant]
EP 3316488A1 · 2018 [cited by examiner]
Office Action and Search Report dated Dec. 7, 2023, corresponding to Chinese Patent Application No. 202180029629.7. [cited by applicant]
RF Power Analysis on 5.8 GHz Low-Power Amplifier Using Resonant Tunneling Diodes, Jongwon Lee and Kyounghoon Yang, IEEE Microwave and Wireless Components Letters, vol. 27, No. 1, p. 61-63, Jan. 31, 2017. [cited by applicant]
International Search Report and Written Opinion dated Jun. 15, 2021 corresponding to International Patent Application No. PCT/EP2021/057782. [cited by applicant]
Jongwon Lee et al., “RF Power Analysis on 5.8 GHz Low-Power Amplifier Using Resonant Tunneling Diodes,” IEEE Microwave and Wireless Components Letters, vol. 27, No. 1, Jan. 1, 2017, pp. 61-63, XP011638536. [cited by applicant]
Bosung Suh et al., “A 7-GHz CMOS Bidirectional Variable Gain Amplifier with Low Gain and Phase Imbalances,” IEEE Transactions on Circuits and Systems I: Regular Papers, IEEE, vol. 65, No. 9, Sep. 1, 2018, pp. 2669-2678,… [cited by applicant]
Naoto Oshima et al., “Wireless data transmission of 30 Gbps at a 500-GHz range using resonant-tunneling-diode terahertz oscillator,” 2016 IEEE MTT-S International Microwave Symposium (IMS), IEEE, May 22, 2016, pp. 1-4, … [cited by applicant]
Jongwon Lee et al., “5 GHz low-power RTD-based amplifier MMIC with a high figure-of-merit of 24.5 dB/mW,” Indium Phosphide and Related Materials (IPRM), 2013 International Conference on, IEEE, May 19, 2013, pp. 1-2, XP0… [cited by applicant]
Communication pursuant to Article 94(3) EPC dated Jan. 23, 2025, corresponding to European Patent Application No. 21 715 533.0. [cited by applicant]
Notification of Second Office Action dated May 8, 2024 corresponding to Chinese Patent Application No. 2021800296297, with English translation thereof. [cited by applicant]