REFLECTIVE PHOTOMASK BLANK AND REFLECTIVE PHOTOMASK
The present invention is intended to provide a reflective photomask blank and a reflective photomask that suppress or reduce a shadowing effect of a reflective photomask for pattern transfer using light with a wavelength in an extreme ultraviolet region as a light source and that have hydrogen radical resistance. A reflective photomask blank ( 10 ) according to an embodiment of the present invention is a reflective photomask blank for producing a reflective photomask for pattern transfer using extreme ultraviolet light as a light source, and includes a substrate ( 1 ), a reflective layer ( 2 ) including a multi-layer film formed on the substrate ( 1 ), and an absorption layer (4) formed on the reflective layer ( 2 ). The absorption layer (4) is formed of a material containing a total of 50 atomic % or more of indium (In) and oxygen (O). An atomic number ratio (O/In) of oxygen (O) to indium (In) in the absorption layer ( 4 ) exceeds 1.5, and a film thickness of the absorption layer ( 4 ) is in a range of from 17 nm to 45 nm.
1 . A reflective photomask blank for producing a reflective photomask for pattern transfer using extreme ultraviolet light as a light source, the reflective photomask blank comprising:
a substrate;
a reflective layer including a multi-layer film formed on the substrate; and
an absorption layer formed on the reflective layer,
wherein the absorption layer is formed of a material containing a total of 50 atomic % or more of indium (In) and oxygen (O), an atomic number ratio (O/In) of oxygen (O) to indium (In) in the absorption layer exceeding 1.5, and a film thickness of the absorption layer is in a range of from 17 nm to 45 nm.
2 . The reflective photomask blank according to claim 1 , wherein the absorption layer further contains one or more elements selected from a group consisting of Ta, Pt, Te, Zr, Hf, Ti, W, Si, Cr, Mo, Sn, Pd, Ni, F, N, C, and H.
3 . A reflective photomask comprising:
a substrate;
a reflective layer including a multi-layer film formed on the substrate; and
an absorption pattern layer formed on the reflective layer and including a material containing a total of 50 atomic % or more of indium (In) and oxygen (O) and having an atomic number ratio (O/In) of oxygen (O) to indium (In) exceeding 1.5, the absorption pattern layer being formed with a pattern,
wherein a film thickness of the absorption pattern layer is in a range of from 17 nm to 45 nm.
4 . The reflective photomask according to claim 3 , wherein
the absorption pattern layer further contains one or more elements selected from a group consisting of Ta, Pt, Te, Zr, Hf, Ti, W, Si, Cr, Mo, Sn, Pd, Ni, F, N, C, and H.