Granted Patent B2

US 12,477,893 · App. 17/921,281 · Granted Nov 18, 2025

Inventors: Huajie Yan (Beijing, CN); Zhiqiang Jiao (Beijing, CN); Lu Wang (Beijing, CN); Peng Wang (Beijing, CN)

Assignee: Beijing BOE Technology Development Co., Ltd.

H10K50/30H10K50/805H10K71/60H10K59/80

Abstract

Claims (91)

1 . A light emitting transistor, comprising:

a gate electrode on a base substrate;

an insulating layer on a side of the gate electrode away from the base substrate;

a first electrode on a side of the insulating layer away from the base substrate, wherein the first electrode is provided with a plurality of through holes therein, which are divided into a plurality of through hole groups arranged side by side in a first direction; each through hole group comprises multiple through holes arranged in a second direction, the first direction intersects the second direction;

a light emitting functional layer on a side of the first electrode away from the base substrate; and

a second electrode on a side of the light emitting functional layer away from the base substrate; and

wherein the light emitting transistor further comprises a topological insulating pattern layer on the insulating layer and comprising a plurality of topological insulating pattern portions spaced apart from each other,

wherein the plurality of topological insulating pattern portions are in one-to-one correspondence with the plurality of through holes and are made of a metal-organic topological insulator material,

the first electrode is made of a metal material, and

a metal element in the metal material is the same as that in the metal-organic topological insulator material.

2 . The light emitting transistor of claim 1 , wherein

the metal-organic topological insulator material comprises MgAg-DCA, and

the first electrode is made of a magnesium silver alloy material.

3 . The light emitting transistor of claim 1 , wherein an orthographic projection of each through hole on the base substrate is polygonal or substantially circular.

4 . The light emitting transistor of claim 1 , wherein the first electrode has a thickness in a range of 1 nm to 1000 nm.

5 . The light emitting transistor of claim 1 , wherein

the insulating layer comprises at least: a first insulating sub-layer and a second insulating sub-layer,

wherein the first insulating sub-layer is on a side of the second insulating sub-layer close to the base substrate; and

the first insulating sub-layer has a dielectric constant greater than that of the second insulating sub-layer, and has a breakdown field strength less than that of the second insulating sub-layer.

6 . The light emitting transistor of claim 1 , wherein

the light emitting functional layer comprises: an electron transport layer, a light emitting layer, and a hole transport layer, which are sequentially arranged in a direction away from the base substrate; or

the light emitting functional layer comprises a hole transport layer, a light emitting layer, and an electron transport layer, which are sequentially arranged in the direction away from the base substrate.

7 . A method for manufacturing the light emitting transistor of claim 1 , comprising:

forming a gate electrode on a base substrate;

forming an insulating layer on a side of the gate electrode away from the base substrate;

forming a first electrode on a side of the insulating layer away from the base substrate, wherein the first electrode is provided with a plurality of through holes therein, which are divided into a plurality of through hole groups arranged side by side in a first direction; each through hole group comprises multiple through holes arranged in a second direction, the first direction intersects the second direction;

forming a light emitting functional layer on a side of the first electrode away from the base substrate; and

forming a second electrode on a side of the light emitting functional layer away from the base substrate.

8 . The manufacturing method of claim 7 , wherein the forming a first electrode on a side of the insulating layer away from the base substrate comprises:

forming a topological insulating pattern layer on a side of the insulating layer away from the base substrate, wherein the topological insulating pattern layer comprises a plurality of topological insulating pattern portions spaced apart from each other and are made of a metal-organic topological insulator material; and

depositing a metal material on the insulating layer to form the first electrode provided with the plurality of through holes,

wherein a metal element in the metal material is the same as that in the metal-organic topological insulator material, and

the plurality of through holes are in one-to-one correspondence with the plurality of topological insulating pattern portions.

9 . The manufacturing method of claim 8 , wherein

the metal-organic topological insulator material comprises MgAg-DCA; and

the first electrode is made of a magnesium silver alloy material.

10 . The manufacturing method of claim 7 , wherein the first electrode is formed through a physical vapor deposition process.

11 . The manufacturing method of claim 7 , wherein the forming an insulating layer on a side of the gate away from the base substrate comprises:

forming a first insulating sub-layer on a side of the gate electrode away from the base substrate; and

forming a second insulating sub-layer on a side of the first insulating sub-layer away from the base substrate; and

wherein the first insulating sub-layer has a dielectric constant greater than that of the second insulating sub-layer, and has a breakdown field strength less than that of the second insulating sub-layer.

12 . The manufacturing method of claim 7 , wherein the forming a light emitting functional layer on a side of the first electrode away from the base substrate comprises:

sequentially forming an electron transport layer, a light emitting layer, and a hole transport layer in a direction away from the base substrate; or

sequentially forming a hole transport layer, a light emitting layer, and an electron transport layer in the direction away from the base substrate.

13 . A display substrate, comprising a plurality of light emitting transistors, each of which is the light emitting transistor of claim 1 .

14 . A light emitting transistor, comprising:

a gate electrode on a base substrate;

an insulating layer on a side of the gate electrode away from the base substrate;

a first electrode on a side of the insulating layer away from the base substrate, wherein the first electrode is provided with a plurality of through holes therein, which are divided into a plurality of through hole groups arranged side by side in a first direction; each through hole group comprises multiple through holes arranged in a second direction, the first direction intersects the second direction;

a light emitting functional layer on a side of the first electrode away from the base substrate; and

a second electrode on a side of the light emitting functional layer away from the base substrate, wherein

a plurality of insulating protrusions are arranged on a surface of the insulating layer away from the base substrate and spaced apart from each other, and are in one-to-one correspondence with the plurality of through holes;

the light emitting transistor comprises a first metal layer comprising the first electrode and a plurality of redundant electrodes; and

each redundant electrode is arranged on a surface of one corresponding insulating protrusion away from the base substrate, and is disconnected from the first electrode.

15 . The light emitting transistor of claim 14 , wherein a cross-sectional area of a surface of each insulating protrusion close to the base substrate is less than that of a surface of the insulating protrusion away from the base substrate.

16 . A method for manufacturing the light emitting transistor of claim 14 , comprising:

forming a gate electrode on a base substrate;

forming an insulating layer on a side of the gate electrode away from the base substrate;

forming a first electrode on a side of the insulating layer away from the base substrate, wherein the first electrode is provided with a plurality of through holes therein, which are divided into a plurality of through hole groups arranged side by side in a first direction; each through hole group comprises multiple through holes arranged in a second direction, the first direction intersects the second direction;

forming a light emitting functional layer on a side of the first electrode away from the base substrate; and

forming a second electrode on a side of the light emitting functional layer away from the base substrate, wherein

the manufacturing method further comprises: forming a plurality of insulating protrusions, spaced from each other, on a side of the insulating layer away from the base substrate;

the forming a first electrode on a side of the insulating layer away from the base substrate comprises:

depositing a first metal layer on the insulating layer and the plurality of insulating protrusions,

wherein the first metal layer comprises the first electrode and a plurality of redundant electrodes,

the plurality of insulating protrusions are in one-to-one correspondence with the plurality of through holes of the first electrode; and

each redundant electrode is arranged on a surface of one corresponding insulating protrusion away from the base substrate, and disconnected from the first electrode.

17 . The manufacturing method of claim 16 , wherein a cross-sectional area of a surface of each insulating protrusion close to the base substrate is less than that of a surface of the insulating protrusion away from the base substrate.

18 . A light emitting transistor, comprising:

a gate electrode on a base substrate;

an insulating layer on a side of the gate electrode away from the base substrate;

a first electrode on a side of the insulating layer away from the base substrate, wherein the first electrode is provided with a plurality of through holes therein, which are divided into a plurality of through hole groups arranged side by side in a first direction; each through hole group comprises multiple through holes arranged in a second direction, the first direction intersects the second direction;

a light emitting functional layer on a side of the first electrode away from the base substrate; and

a second electrode on a side of the light emitting functional layer away from the base substrate, wherein

the first electrode has a mesh structure comprising a plurality of metal portions arranged side by side in the first direction;

every two adjacent metal portions of the plurality of metal portions have mirror symmetry;

each metal portion comprises: a plurality of first bending portions and a plurality of second bending portions, which are alternately arranged in the second direction and bend in opposite directions; and

wherein the plurality of first bending portions and the plurality of second bending portions of every two adjacent metal portions of the plurality of metal portions define a plurality of meshes of the mesh structure.

19 . A method for manufacturing the light emitting transistor of claim 18 , comprising:

forming a gate electrode on a base substrate;

forming an insulating layer on a side of the gate electrode away from the base substrate;

forming a first electrode on a side of the insulating layer away from the base substrate, wherein the first electrode is provided with a plurality of through holes therein, which are divided into a plurality of through hole groups arranged side by side in a first direction; each through hole group comprises multiple through holes arranged in a second direction, the first direction intersects the second direction;

forming a light emitting functional layer on a side of the first electrode away from the base substrate; and

forming a second electrode on a side of the light emitting functional layer away from the base substrate,

wherein the forming a first electrode on a side of the insulating layer away from the base substrate comprises:

forming a plurality of first metal portions, spaced apart from each other, on the insulating layer; and

forming a plurality of second metal portions, spaced apart from each other, on the insulating layer;

wherein the plurality of first metal portions and the plurality of second metal portions form the first electrode having a mesh structure and are arranged side by side in the first direction;

each first metal portion and a second metal portion adjacent to the first metal portion have mirror symmetry;

each of the first metal portion and the second metal portion comprises: a plurality of first bending portions and a plurality of second bending portions, which are alternately arranged in the second direction and bend in opposite directions; and

wherein the plurality of first bending portions and the plurality of second bending portions of each first metal portion and a second metal portion adjacent to the first metal portion define a plurality of meshes of the mesh structure.

Assignments (2)

Continuity (1)

References Cited (12)