Semiconductor structure and method for manufacturing same
A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The semiconductor structure includes: a semiconductor substrate layer; an N-type waveguide structure arranged on the semiconductor substrate layer; and an active layer arranged on a surface of the N-type waveguide structure on a side away from the semiconductor substrate layer. The N-type waveguide structure includes a first N-type waveguide layer and a second N-type waveguide layer that are stacked. The second N-type waveguide layer is arranged between the first N-type waveguide layer and the active layer. A conduction band level of the first N-type waveguide layer is the same as a conduction band level of the second N-type waveguide layer. A valence band level of the first N-type waveguide layer is lower than a valence band level of the second N-type waveguide layer. The semiconductor structure increases light emitting efficiency.
1 . A semiconductor structure, comprising:
a semiconductor substrate layer;
an N-type waveguide structure arranged on the semiconductor substrate layer; and
an active layer arranged on a surface of the N-type waveguide structure on a side away from the semiconductor substrate layer, wherein
the N-type waveguide structure comprises a first N-type waveguide layer and a second N-type waveguide layer that are stacked, the second N-type waveguide layer is arranged between the first N-type waveguide layer and the active layer, a conduction band level of the first N-type waveguide layer is the same as a conduction band level of the second N-type waveguide layer, and a valence band level of the first N-type waveguide layer is lower than a valence band level of the second N-type waveguide layer;
wherein the semiconductor structure further comprises a first confining layer arranged between the N-type waveguide structure and the semiconductor substrate layer, wherein a difference between the conduction band level of the first N-type waveguide layer and a conduction band level of the first confining layer is less than a difference between the valence band level of the first N-type waveguide layer and a valence band level of the first confining layer, wherein the valence band level of the first N-type waveguide layer is higher than the valence band level of the first confining layer.
2 . The semiconductor structure according to claim 1 , wherein a difference between the valence band level of the second N-type waveguide layer and the valence band level of the first N-type waveguide layer ranges from 0.04 eV to 0.3 eV.
3 . The semiconductor structure according to claim 1 , wherein a material of the first N-type waveguide layer comprises Al x1 Ga x2 In 1-x1-x2 P doped with N-type conductive ions, and a material of the second N-type waveguide layer comprises Al y Ga 1-y As doped with N-type conductive ions.
4 . The semiconductor structure according to claim 3 , wherein a value of x1 ranges from 0 to 0.2, and a value of y ranges from 0.2 to 0.5.
5 . The semiconductor structure according to claim 1 , wherein a thickness of the first N-type waveguide layer is greater than a thickness of the second N-type waveguide layer.
6 . The semiconductor structure according to claim 1 , wherein a material of the first confining layer is Al x3 Ga x4 In 1-x3-x4 P doped with N-type conductive ions.
7 . The semiconductor structure according to claim 1 , further comprising: a P-type waveguide layer arranged on a surface of the active layer on a side away from the semiconductor substrate layer, and a second confining layer arranged on a surface of the P-type waveguide layer on a side away from the semiconductor substrate layer, wherein a difference between a valence band level of the second confining layer and a valence band level of the P-type waveguide layer is less than a difference between a conduction band level of the second confining layer and a conduction band level of the P-type waveguide layer.
8 . The semiconductor structure according to claim 7 , wherein a material of the P-type waveguide layer comprises Al z1 Ga 1-z1 As doped with P-type conductive ions, and a material of the second confining layer comprises Al z2 Ga 1-z2 As doped with P-type conductive ions.
9 . The semiconductor structure according to claim 7 , wherein a thickness of the P-type waveguide layer is less than a thickness of the N-type waveguide structure.
10 . A method for manufacturing a semiconductor structure, comprising:
providing a semiconductor substrate layer;
forming an N-type waveguide structure on the semiconductor substrate layer, wherein a process for forming the N-type waveguide structure comprises: forming a first N-type waveguide layer on the semiconductor substrate layer; and forming a second N-type waveguide layer on a surface of the first N-type waveguide layer on a side away from the semiconductor substrate layer, wherein a conduction band level of the first N-type waveguide layer is the same as a conduction band level of the second N-type waveguide layer, and a valence band level of the first N-type waveguide layer is lower than a valence band level of the second N-type waveguide layer; and
forming an active layer on a surface of the N-type waveguide structure on a side away from the semiconductor substrate layer;
wherein the method further comprises: before forming the N-type waveguide structure, forming a first confining layer on the semiconductor substrate layer, wherein a difference between the conduction band level of the first N-type waveguide layer and a conduction band level of the first confining layer is less than a difference between the valence band level of the first N-type waveguide layer and a valence band level of the first confining layer, wherein the valence band level of the first N-type waveguide layer is higher than the valence band level of the first confining layer.
11 . The method for manufacturing a semiconductor structure according to claim 10 , wherein a material of the first N-type waveguide layer comprises Al x1 Ga x2 In 1-x1-x2 P doped with N-type conductive ions, and a material of the second N-type waveguide layer comprises Al y Ga 1-y As doped with N-type conductive ions; and
the steps of forming a first N-type waveguide layer and a second N-type waveguide layer comprise: step 1: introducing an indium source gas, a gallium source gas, an aluminum source gas and a phosphorus source gas; step 2: turning off the indium source gas; step 3: turning off the gallium source gas and the aluminum source gas; step 4: turning off the phosphorus source gas;
step 5: introducing an arsenic source gas; and step 6: introducing the gallium source gas and the aluminum source gas.
12 . The method for manufacturing a semiconductor structure according to claim 11 , wherein a time between an end moment of step 2 and an end moment of step 3 ranges from 0.2 seconds to 3 seconds; a time between the end moment of step 3 and an end moment of step 4 ranges from 0.1 seconds to 30 seconds; and a duration of step 5 ranges from 0.1 seconds to 30 seconds.
13 . The method for manufacturing a semiconductor structure according to claim 10 , further comprising: forming a P-type waveguide layer on a surface of the active layer on a side away from the semiconductor substrate layer, and forming a second confining layer on a surface of the P-type waveguide layer on a side away from the semiconductor substrate layer, wherein a difference between a valence band level of the second confining layer and a valence band level of the P-type waveguide layer is less than a difference between a conduction band level of the second confining layer and a conduction band level of the P-type waveguide layer.
14 . The method for manufacturing a semiconductor structure according to claim 13 , wherein a thickness of the P-type waveguide layer is less than a thickness of the N-type waveguide structure.