Stray field immune angle sensor
A sensor, comprising: a substrate having a reference crystal orientation and a plurality of vertical Hall element pairs that are formed on the substrate. Each vertical Hall element pair includes: (i) a respective first vertical Hall element that is oriented at a respective first angle relative to the reference crystal orientation of the substrate and (ii) a respective second vertical Hall element that is oriented at a respective second angle relative to the reference crystal orientation of the substrate. The substrate has a rectangular shape, and each of the vertical Hall element pairs is disposed in a different respective corner of the substrate.
1. A sensor, comprising:
a substrate having a reference crystal orientation; and
a plurality of vertical Hall element pairs that are formed on the substrate, each vertical Hall element pair including: (i) a respective first vertical Hall element that is oriented at a respective first angle relative to the reference crystal orientation of the substrate and (ii) a respective second vertical Hall element that is oriented at a respective second angle relative to the reference crystal orientation of the substrate,
wherein the substrate has a rectangular shape, and each of the vertical Hall element pairs is disposed in a different respective corner of the substrate,
wherein the respective first vertical Hall element in at least two of the vertical Hall element pairs is oriented at substantially +45 degrees relative to the reference crystal orientation of the substrate, and the respective second vertical Hall element in at least two of the vertical Hall element pairs is oriented at substantially −45 degrees relative to the reference crystal orientation of the substrate.
2. The sensor of claim 1 , wherein;
the vertical Hall elements in each of the vertical Hall element pairs have axes of maximum sensitivity that are substantially perpendicular to each other,
one of the vertical Hall elements in each of the vertical Hall element pairs has an axis of maximum sensitivity that is substantially parallel with a given diagonal of the substrate, and the other one of the vertical Hall elements in each of the vertical Hall element pairs has an axis of maximum sensitivity that is substantially perpendicular to the given diagonal of the substrate.
3. The sensor of claim 1 , wherein:
the respective first vertical Hall element in each of the vertical Hall element pairs is configured to face towards the vertical Hall element pair's respective corner, and
the respective second vertical Hall element in each of the vertical Hall element pairs is configured to face away from the vertical Hall element pair's respective corner.
4. The sensor of claim 1 , wherein:
one of the vertical Hall elements in each of the vertical Hall element pairs has an axis of maximum sensitivity that is substantially parallel with a given diagonal of the substrate, and
the other one of the vertical Hall elements in each of the vertical Hall element pairs has an axis of maximum sensitivity that is substantially perpendicular to the given diagonal of the substrate.
5. The sensor of claim 1 , wherein the plurality of vertical Hall element pairs includes at least two vertical Hall element pairs.
6. The sensor of claim 1 , further comprising a processing circuitry configured to:
receive a plurality of signals, each of the signals being generated by a different respective vertical Hall element in any of the plurality of vertical Hall element pairs, each of the signals being generated in response to a magnetic field that is associated with a rotating target; and
generate an output signal that is indicative of at least one of speed or position of the rotating target.
7. The sensor of claim 1 , wherein the substrate includes a silicon die.
8. A sensor, comprising:
a substrate having a reference crystal orientation; and
a plurality of vertical Hall element pairs that are formed on the substrate, each vertical Hall element pair including: (i) a respective first vertical Hall element that is oriented at a respective first angle relative to the reference crystal orientation of substrate and (ii) a respective second vertical Hall element that is oriented at a respective second angle relative to the reference crystal orientation of the substrate,
wherein the substrate has a rectangular shape, and each of the vertical Hall element pairs is disposed in a different respective corner of the substrate,
wherein the plurality of vertical Hall elements includes a first vertical Hall element pair, a second vertical Hall element pair, a third vertical Hall element pair, and a fourth vertical Hall element pair, the sensor further comprising processing circuitry configured to generate a differential signal having a first component and a second component, the first component and the second component being defined as follows:
firstComponent= S 1,1 −S 4,1 +S 2,1 −S 3,1
secondComponent= S 1,2 −S 4,2 +S 2,2 −S 3,2
where S 1,1 is a signal that is output by the respective first vertical Hall element of the first vertical Hall element pair, S 4,1 is a signal that is output by the respective first vertical Hall element of the fourth vertical Hall element pair, S 2,1 is a signal that is output by the respective first vertical Hall element of the second vertical Hall element pair, S 3,1 is a signal that is output by the respective first vertical Hall element of the third vertical Hall element pair, S 1,2 is a signal that is output by the respective second vertical Hall element of the first vertical Hall element pair, S 4,2 is a signal that is output by the respective second vertical Hall element of the fourth vertical Hall element pair, S 2,2 is a signal that is output by the respective second vertical Hall element of the second vertical Hall element pair, and S 3,2 is a signal that is output by the respective second vertical Hall element of the third vertical Hall element pair.
9. The sensor of claim 8 , wherein each of the signals S 1,1 , S 4,1 , S 2,1 , S 3,1 , S 1,2 , S 4,2 , S 2,2 , S 3,2 is generated in response to a magnetic field associated with a rotating target, and the processing circuitry is configured to generate an output signal based on the differential signal, the output signal being indicative of at least one of speed or position of the rotating target.
10. A sensor, comprising:
a substrate having a rectangular shape;
a plurality of vertical Hall element pairs that are formed on the substrate, each of the vertical Hall element pairs being formed in a different corner of the substrate, each of the vertical Hall element pairs including: (i) a respective first vertical Hall element that is configured to face the vertical Hall element pair's respective corner, and (ii) a respective second vertical Hall element that is configured to face away from the vertical Hall element pair's respective corner,
wherein the substrate has a reference crystal orientation, the respective first vertical Hall element in at least two of the vertical Hall element pairs is oriented at substantially +45 degrees relative to the reference crystal orientation of the substrate, and the respective second vertical Hall element in at least two of the vertical Hall element pairs is oriented at substantially −45 degrees relative to the reference crystal orientation of the substrate.
11. The sensor of claim 10 , wherein:
the vertical Hall elements in each of the vertical Hall element pairs have axes of maximum sensitivity that are substantially perpendicular to each other,
one of the vertical Hall elements in each of the vertical Hall element pairs has an axis of maximum sensitivity that is substantially parallel with a given diagonal of the substrate, and the other one of the vertical Hall elements in each of the vertical Hall element pairs has an axis of maximum sensitivity that is substantially perpendicular to the given diagonal of the substrate.
12. The sensor of claim 10 , wherein:
the substrate has a reference crystal orientation,
the respective first vertical Hall element in each of the vertical Hall element pairs is oriented at a respective first angle relative to the reference crystal orientation of the substrate, and
the respective second vertical Hall element in each of the vertical Hall element pairs is oriented at a respective second angle relative to the reference crystal orientation of the substrate.
13. The sensor of claim 10 , wherein:
one of the vertical Hall elements in each of the vertical Hall element pairs has an axis of maximum sensitivity that is substantially parallel with a given diagonal of the substrate, and
the other one of the vertical Hall elements in each of the vertical Hall element pairs has an axis of maximum sensitivity that is substantially perpendicular to the given diagonal of the substrate.
14. The sensor of claim 10 , wherein the plurality of vertical Hall element pairs includes at least two vertical Hall element pairs.
15. A sensor, comprising:
a substrate having a rectangular shape:
a plurality of vertical Hall element pairs that are formed on the substrate, each of the vertical Hall element pairs being formed in a different corner of the substrate, each of the vertical Hall element pairs including: (i) a respective first vertical Hall element that is configured to face the vertical Hall element pair's respective corner, and (ii) a respective second vertical Hall element that is configured to face away from the vertical Hall element pair's respective corner,
wherein the plurality of vertical Hall elements includes a first vertical Hall element pair, a second vertical Hall element pair, a third vertical Hall element pair, and a fourth vertical Hall element pair, the sensor further comprising processing circuitry configured to generate a differential signal having a first component and a second component, the first component and the second component being defined as follows:
firstComponent= S 1,1 −S 4,1 +S 2,1 −S 3,1
secondComponent= S 1,2 −S 4,2 +S 2,2 −S 3,2
where S 1,1 is a signal that is output by the respective first vertical Hall element of the first vertical Hall element pair, S 4,1 is a signal that is output by the respective first vertical Hall element of the fourth vertical Hall element pair, S 2,1 is a signal that is output by the respective first vertical Hall element of the second vertical Hall element pair, S 3,1 is a signal that is output by the respective first vertical Hall element of the third vertical Hall element pair, S 1,2 is a signal that is output by the respective second vertical Hall element of the first vertical Hall element pair, S 4,2 is a signal that is output by the respective second vertical Hall element of the fourth vertical Hall element pair, S 2,2 is a signal that is output by the respective second vertical Hall element of the second vertical Hall element pair, and S 3,2 is a signal that is output by the respective second vertical Hall element of the third vertical Hall element pair.
16. The sensor of claim 15 , wherein each of the signals S 1,1 , S 4,1 , S 2,1 , S 3,1 , S 1,2 , S 4,2 , S 2,2 , S 3,2 is generated in response to a magnetic field associated with a rotating target, and the processing circuitry is configured to generate an output signal based on the differential signal, the output signal being indicative of at least one of speed or position of the rotating target.
17. The sensor of claim 10 , further comprising a processing circuitry configured to:
receive a plurality of signals, each of the signals being generated by a different respective vertical Hall element in any of the plurality of vertical Hall element pairs, each of the signals being generated in response to a magnetic field that is associated with a rotating target; and
generate an output signal that is indicative of at least one of speed or position of the rotating target.
18. A system, comprising:
a ring magnet having first surface, a second surface, and a bore extending from the first surface to the second surface, the bore having a central longitudinal axis;
a substrate having a reference crystal orientation;
a plurality of vertical Hall element pairs that are formed on the substrate, each vertical Hall element pair including: (i) a respective first vertical Hall element that is oriented at a respective first angle relative to the reference crystal orientation of the substrate and (ii) a respective second vertical Hall element that is oriented at a respective second angle relative to the reference crystal orientation of the substrate,
wherein the respective first vertical Hall element in at least two of the vertical Hall element pairs is often at substantially +45 degrees relative to the reference crystal orientation of the substrate, and the respective second vertical Hall element in at least two of the vertical Hall element pairs is oriented at substantially −45 degrees relative to the reference crystal orientation of the substrate.
19. The system of claim 18 , wherein the substrate is inserted into the bore of the ring magnet.
20. The system of claim 18 , wherein the vertical Hall elements in each of the vertical Hall element pairs have axes of maximum sensitivity that are substantially perpendicular to each other.
21. The system of claim 18 , wherein:
the substrate has a rectangular shape;
each of the vertical Hall element pairs is disposed in a different respective corner of the substrate,
the respective first vertical Hall element in each of the vertical Hall element pairs is configured to face towards the vertical Hall element pair's respective corner, and
the respective second vertical Hall element in each of the vertical Hall element pairs is configured to face away from the vertical Hall element pair's respective corner.
22. The system of claim 18 , further comprising a processing circuitry configured to:
receive a plurality of signals, each of the signals being generated by a different respective vertical Hall element in any of the plurality of vertical Hall element pairs, each of the signals being generated in response to a magnetic field that is associated with a rotating target; and
generate an output signal that is indicative of at least one of speed or position of the rotating target.
23. A system, comprising:
a ring magnet having first surface, a second surface, and a bore extending from the first surface to the second surface, the bore having a central longitudinal axis,
a substrate having a reference crystal orientation;
a plurality of vertical Hall element pairs that are formed on the substrate, each vertical Hall element pair including: (i) a respective first vertical Hall element that is oriented at a respective first angle relative to the reference crystal orientation of the substrate and (ii) a respective second vertical Hall element that is oriented at a respective second angle relative to the reference crystal orientation of the substrate,
wherein the plurality of vertical Hall elements includes a first vertical Hall element pair, a second vertical Hall element pair, a third vertical Hall element pair, and a fourth vertical Hall element pair, the system further comprising processing circuitry configured to generate a differential signal having a first component and a second component, the first component and the second component being defined as follows:
firstComponent= S 1,1 −S 4,1 +S 2,1 −S 3,1
secondComponent= S 1,2 −S 4,2 +S 2,2 −S 3,2
where S 1,1 is a signal that is output by the respective first vertical Hall element of the first vertical Hall element pair, S 4,1 is a signal that is output by the respective first vertical Hall element of the fourth vertical Hall element pair, S 2,1 is a signal that is output by the respective first vertical Hall element of the second vertical Hall element pair, S 3,1 is a signal that is output by the respective first vertical Hall element of the third vertical Hall element pair, S 1,2 is a signal that is output by the respective second vertical Hall element of the first vertical Hall element pair, S 4,2 is a signal that is output by the respective second vertical Hall element of the fourth vertical Hall element pair, S 2,2 is a signal that is output by the respective second vertical Hall element of the second vertical Hall element pair, and S 3,2 is a signal that is output by the respective second vertical Hall element of the third vertical Hall element pair.
24. The system of claim 23 , wherein each of the signals S 1,1 , S 4,1 , S 2,1 , S 3,1 , S 1,2 , S 4,2 , S 2,2 , S 3,2 is generated in response to a magnetic field associated with a rotating target, and the processing circuitry is configured to generate an output signal based on the differential signal, the output signal being indicative of at least one of speed or position of the rotating target.