Wafer placement table
A wafer placement table is a wafer placement table that includes a refrigerant flow channel through which refrigerant is flowed and includes a top base including a ceramic base incorporating an electrode and having a wafer placement surface on a top surface of the ceramic base, a bottom base on a top surface of which a flow channel groove defining a side wall and a bottom of the refrigerant flow channel is provided, and a seal member disposed between the top base and the bottom base so as to seal the refrigerant flow channel from an outside.
1 . A wafer placement table that includes a refrigerant flow channel through which refrigerant is flowed, the wafer placement table comprising:
a top base that includes a ceramic base incorporating an electrode and having a wafer placement surface on a top surface of the ceramic base;
a bottom base on a top surface of which a flow channel groove that defines a side wall and a bottom of the refrigerant flow channel is provided; and
a seal member disposed between the top base and the bottom base so as to seal the refrigerant flow channel from an outside;
wherein a bottom surface of the top base defines a ceiling of the refrigerant flow channel; and
wherein the top base and the bottom base are not bonded at an interface between the ceiling of the refrigerant flow channel of the top base and the side wall and the bottom of the refrigerant flow channel of the bottom base.
2 . The wafer placement table according to claim 1 , wherein the top base includes the ceramic base, a ceiling base bonded to a bottom surface of the ceramic base and defining a ceiling of the refrigerant flow channel, and a metal bonding layer bonding the ceramic base with the ceiling base.
3 . The wafer placement table according to claim 2 , wherein an outside diameter of the ceiling base is greater than an outside diameter of the ceramic base.
4 . The wafer placement table according to claim 2 , wherein an outside diameter of the bottom base is the same as an outside diameter of the ceiling base.
5 . The wafer placement table according to claim 2 , wherein the absolute value of a difference in coefficient of linear thermal expansion from 40° C. to 400° C. between the ceiling base and the ceramic base is less than or equal to 1.5 x 10 −6 /K.
6 . The wafer placement table according to claim 2 , wherein the ceiling base is made of a composite material of metal and ceramics.
7 . The wafer placement table according to claim 2 , wherein the ceiling base is made of a ceramic material of which a main component is the same as a main component of the ceramic base.
8 . The wafer placement table according to claim 1 , wherein the top base is a single layer of the ceramic base.
9 . The wafer placement table according to claim 1 , wherein the bottom base is made of an easy-to-work material.
10 . The wafer placement table according to claim 1 , wherein multiple outer seal members provided so as to surround an outermost edge of the flow channel groove are provided as the seal member.
11 . The wafer placement table according to claim 1 , further comprising a heatsink sheet disposed between the bottom surface of the top base and the top surface of the bottom base.
12 . The wafer placement table according to claim 11 , wherein a thermal resistance of the heatsink sheet is lower than or equal to 0.5 K·cm 2 /W.
13 . The wafer placement table according to claim 11 , wherein a Young's modulus of the heatsink sheet is lower than or equal to 100 MPa.
14 . The wafer placement table according to claim 11 , wherein the heatsink sheet has a body part disposed on a part, where the flow channel groove is not provided, on the top surface of the bottom base, and a bridge part bridged over the flow channel groove.